V23990-P640-H10-PM [VINCOTECH]
Optionally with brake chopper;
| 型号： | V23990-P640-H10-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Optionally with brake chopper |
| 文件： | 总16页 (文件大小：1529K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P640-G10/H10-PM
preliminary datasheet
flowCON 0
1200V / 75A
Features
flow0 housing
● Input rectifier
● Optionally with brake chopper
● Vincotech clip-in housing
Target Applications
Schematic
● Motor drives
● UPS
Types
● V23990-P640-G10-PM with brake chopper
● V23990-P640-H10-PM without brake chopper
Maximum Ratings
Condition
Parameter
Symbol
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
VRRM
IFAV
Tj=Tjmax
1600
63
V
A
A
Tj=Tjmax
DC current
Th=80°C
Tj=45°C
Th=80°C
IFSM
850
3610
67
tp=10ms
half sine wave
I2t-value
I2t
A2s
W
Ptot
Tj=Tjmax
Power dissipation per Diode
Tjmax
Maximum junction temperature
150
°C
Input Rectifier Thyristor
Repetitive peak reverse voltage
Forward average current
VRRM
IFAV
Tj=25ºC
1600
42
V
A
A
Tj=Tjmax
DC current
Th=80°C
Tj=130°C
Th=80°C
IFSM
Surge forward current
450
1012
49
tp=10ms
half sine wave
I2t-value
I2t
A2s
W
Ptot
Tj=Tjmax
Power dissipation per Thyristor
Tjmax
Maximum junction temperature
130
°C
Copyright by Vincotech
1
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Maximum Ratings
Condition
Parameter
Symbol
Value
Unit
Transistor BRC
VCE
IC
Collector-emitter break down voltage
DC collector current
1200
34
V
A
Tj=Tjmax
Th=80°C
Th=80°C
Icpuls
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings*
105
65
A
W
V
±20
tSC
Tj≤150°C
10
μs
V
VCC
VGE=15V
1200
Tjmax
Maximum junction temperature
150
°C
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
BRC inverse diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
6
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
6
A
19
150
W
°C
Tjmax
Diode BRC
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
23
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
50
A
38
W
°C
Tjmax
150
Thermal properties
Storage temperature
Operation temperature
Tstg
Top
-40...+125
-40...+110
°C
°C
Copyright by Vincotech
2
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Maximum Ratings
Condition
Parameter
Symbol
Value
Unit
Insulation properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2 s
4000
V
min 12.7
min 12.7
mm
mm
Copyright by Vincotech
3
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Input Rectifier Bridge
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1
1,17
1,13
0,91
0,78
3
1,5
VF
Vto
rt
Forward voltage
75
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse leakage current
mΩ
mA
K/W
5
0,5
1,5
Ir
1500
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermal grease
thickness ≤50um λ=
0.61W/mK
1,04
n.A.
Input Rectifier Thyristor
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=130°C
Tj=25°C
Tj=130°C
Tj=25°C
Tj=130°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=130°C
Tj=25°C
Tj=115°C
1
1,37
1,45
0,94
0,86
6
2
VF
Vto
75
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
rt
mΩ
mA
ms
ms
V/μs
A/μs
ms
mA
mA
V
8
0,2
Ir
1
2
tGD
Gate controlled delay time
Gate controlled rise time
Ig=1A dig/dt=1A/s
Ig=1A dig/dt=1A/s
1072
1072
tGR
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit-commutated turn-off time
Holding current
(dv/dt)cr
(di/dt)cr
tq
1000
50
150
165
330
1,98
100
IH
IL
Latching current
VGT
IGT
VGD
IGD
Gate trigger voltage
Gate trigger current
A
Gate non-trigger voltage
V
0,25
6
Gate non-trigger current
A
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermal grease
thickness ≤50um λ=
0.61W/mK
1,12
n.A.
K/W
K/W
Copyright by Vincotech
4
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Transistor BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2,2
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0015
35
V
V
1,3
1,69
1,88
15
0
0,25
650
1200
0
mA
nA
20
6
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
ns
65
26
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgon=32Ohm
Rgoff=16Ohm
673
171
3,34
15
600
35
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
mWs
nF
Eoff
3,99
2,53
Cies
Coss
Crss
QGate
RthJH
RthJC
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
0,132
0,115
203
nF
Reverse transfer capacitance
Gate charge
nF
15
960
35
nC
K/W
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermal grease
thickness ≤50um λ=
0.61W/mK
1,08
n.A.
BRC inverse diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,61
1,56
2,3
Diode forward voltage
VF
Ir
3
V
250
Reverse leakage current
1200
uA
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
RthJH
RthJC
Thermal grease
thickness ≤50um λ=
0.61W/mK
3,62
n.A.
K/W
K/W
Copyright by Vincotech
5
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Diode BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,7
1,68
2,4
VF
Ir
Diode forward voltage
35
V
mA
A
250
Reverse leakage current
1200
600
IRRM
trr
Peak reverse recovery current
Reverse recovery time
56,4
279
ns
Rgon=32Ohm
Rgoff=16Ohm
Qrr
Reverse recovered charge
15
35
mC
A/ms
mWs
K/W
K/W
5,15
2460
di(rec)max
/dt
Peak rate of fall of reverse recovery current
Reverse recovery energy
Erec
RthJH
RthJC
1,94
1,86
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermal grease
thickness ≤50um λ=
0.61W/mK
n.A.
Copyright by Vincotech
6
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Brake
Figure 1
Brake IGBT
Figure 2
Typical output characteristics
Brake IGBT
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
80
60
40
20
80
60
40
20
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
Tj =
tp =
Tj =
250
25
μs
°C
250
125
μs
°C
VGE from 7 V to 17 V in steps of 1 V
VGE from 7 V to 17 V in steps of 1 V
Figure 3
Brake IGBT
Figure 4
Brake FRED
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
40
32
24
40
32
24
16
8
125 o C
25 o C
125 o C
25 o C
16
8
0
0
0
VGE (V)
VF (V)
2
4
6
8
10
12
0
0,5
1
1,5
2
2,5
At
At
tp =
tp =
250
10
μs
250
μs
VCE
=
V
Copyright by Vincotech
7
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Brake
Figure 5
Brake IGBT
Figure 6
Brake IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
10
10
Eon
8
6
8
Eoff
6
Eon
Eoff
4
4
Erec
2
0
2
Erec
0
R G ( Ω )
150
0
30
60
90
120
0
10
20
30
40
50
60
70
I C (A)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
125
600
15
°C
V
125
600
15
°C
V
=
=
=
=
V
V
Rgon
Rgoff
=
=
IC =
32
Ω
Ω
35
A
16
Figure 7
Brake IGBT
Figure 8
Brake IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
10
10
tdoff
tdoff
1
1
tdon
tf
tf
0,1
0,1
tdon
tr
tr
0,01
0,01
0,001
0,001
0
30
60
90
120
R G ( Ω ) 150
0
10
20
30
40
50
60
70
IC (A)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
125
600
15
°C
V
125
600
15
°C
V
=
=
=
=
V
V
Rgon
Rgoff
=
=
IC =
32
Ω
Ω
35
A
16
Copyright by Vincotech
8
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Brake
Figure 9
Figure 10
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
101
1
10-5
10-4
10-3
10-2
10-1
100
101
1
t p (s)
t p (s)
With
With
D =
tp / T
1,08
D =
tp / T
1,86
RthJH
=
RthJH =
K/W
K/W
Copyright by Vincotech
9
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Brake
Figure 11
Brake IGBT
Figure 12
Collector current as a
Brake IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
function of heatsink temperature
IC = f(Th)
150
125
100
75
40
35
30
25
20
15
10
5
50
25
0
0
(
o C)
Th
(
o C)
0
50
100
150
200
Th
0
50
100
150
200
At
At
Tj =
Tj =
VGE
150
ºC
150
15
ºC
V
=
Figure 13
Power dissipation as a
Brake FRED
Figure 14
Forward current as a
Brake FRED
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
90
75
60
45
30
15
0
30
25
20
15
10
5
0
(
o C)
Th
(
o C)
0
50
100
150
200
Th
0
50
100
150
200
At
At
Tj =
Tj =
150
ºC
150
ºC
Copyright by Vincotech
10
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Brake Inverse Diode
Figure 1
Brake inverse diode
Figure 2
Brake inverse diode
Typical diode forward current as
a function of forward voltage
IF = f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
14
12
10
8
25°C
125°C
D = 0,5
0,2
6
0,1
4
0,05
0,02
0,01
0,005
0.000
2
0
VF (V)
10-5
10-4
10-3
10-2
10-1
100
101
0
0,5
1
1,5
2
2,5
3
t p (s)
At
With
D =
tp =
250
μs
tp / T
3,62
RthJH
=
K/W
Figure 3
Power dissipation as a
Brake inverse diode
Figure 4
Forward current as a
Brake inverse diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
12
50
40
30
20
10
0
10
8
6
4
2
0
(
o C)
Th
(
o C)
0
50
100
150
200
Th
0
50
100
150
200
At
At
Tj =
Tj =
150
ºC
150
ºC
Copyright by Vincotech
11
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Input Rectifier Bridge
Figure 1
Rectifier diode
Figure 2
Rectifier diode
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
250
200
150
100
50
25°C
125°C
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
0
VF (V)
10-5
10-4
10-3
10-2
10-1
100
101
0
0,4
0,8
1,2
1,6
2
t p (s)
At
With
D =
tp =
250
μs
tp / T
1,04
RthJH
=
K/W
Figure 3
Power dissipation as a
Rectifier diode
Figure 4
Forward current as a
Rectifier diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
90
75
60
45
30
15
0
150
120
90
60
30
0
o C)
0
50
100
150
200
Th
(
o C)
Th
(
0
50
100
150
200
At
At
Tj =
Tj =
150
ºC
150
ºC
Copyright by Vincotech
12
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Thyristor
Figure 1
Thyristor
Figure 2
Thyristor
Typical thyristor forward current as
a function of forward voltage
IF= f(VF)
Thyristor transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
240
200
160
120
80
25°C
125°C
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
40
0
VF (V)
3
0
0,5
1
1,5
2
2,5
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
At
With
D =
tp =
250
μs
tp / T
1,12
RthJH
=
K/W
Figure 3
Power dissipation as a
Thyristor
Figure 4
Forward current as a
Thyristor
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
100
75
50
25
0
150
125
100
75
50
25
0
Th
(
o C)
Th (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
135
ºC
135
ºC
Copyright by Vincotech
13
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Thyristor
Figure 5
Thyristor
Gate trigger characteristics
102
100W
(0,5ms)
20V;20 Ohm
150W
(0,1ms)
101
VGT
50W
(8ms)
BSZ
PG(tp)
100
TJ=- 40oC
TJ=25oC
TJ=130oC
0
)
VGD(130
IGT
0
)
IGD(130
10-1
10-3
10-2
10-1
100
101
102
IG(A)
Copyright by Vincotech
14
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
Package Outline and Pinout
Outline
Pinout
Copyright by Vincotech
15
Revision: 1
V23990-P640-G10/H10-PM
preliminary datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Product Status
Definition
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
Target
Formative or In Design
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Preliminary
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.
Final
Full Production
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright by Vincotech
16
Revision: 1
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Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
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