BYV28-050-TR [VISHAY]
DIODE 3.5 A, 50 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode;
| 型号： | BYV28-050-TR |
| 厂家： | 
VISHAY |
| 描述： | DIODE 3.5 A, 50 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总4页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYV28-50, BYV28-100, BYV28-150, BYV28-200
www.vishay.com
Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• AEC-Q101 qualified
949588
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOD-64
APPLICATIONS
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
• Very fast rectification e.g. for switch mode power supply
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYV28-200
BYV28-200-TR
2500 per 10" tape and reel
2500 per ammopack
12 500
12 500
BYV28-200
BYV28-200-TAP
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
BYV28-50
BYV28-100
BYV28-150
BYV28-200
VR = 50 V; IF(AV) = 3.5 A
V
R = 100 V; IF(AV) = 3.5 A
R = 150 V; IF(AV) = 3.5 A
V
VR = 200 V; IF(AV) = 3.5 A
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYV28-50 VR = VRRM
BYV28-100 R = VRRM
BYV28-150 VR = VRRM
SYMBOL
VALUE
50
UNIT
V
V
100
150
200
55
V
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
V
BYV28-200
BYV28-50
BYV28-100
BYV28-150
BYV28-200
V
R = VRRM
VRSM
VRSM
VRSM
VRSM
IFSM
V
V
110
165
220
90
V
Peak reverse voltage, non repetitive
See electrical characteristics
tp = 10 ms, half sine wave
V
V
Peak forward surge current
Repetitive peak forward current
Average forward current
A
IFRM
25
A
IF(AV)
3.5
A
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
I(BR)R = 1 A, Tj = 175 °C
ER
20
mJ
°C
Junction and storage temperature range
Tj = Tstg
- 55 to + 175
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
On PC board with spacing 25 mm
RthJA
25
70
K/W
K/W
Junction ambient
RthJA
Rev. 1.9. 02-May-16
Document Number: 86044
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV28-50, BYV28-100, BYV28-150, BYV28-200
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
1.1
UNIT
V
IF = 5 A
VF
VF
IR
-
-
-
-
-
-
-
-
-
-
-
-
Forward voltage
IF = 5 A, Tj = 175 °C
0.89
1
V
V
R = VRRM
VRSM
μA
μA
μA
ns
Reverse current
IR
100
150
30
VR = VRRM, Tj = 165 °C
IR
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VR = VRRM
half sine wave
RthJA ≤ 25 K/W
l = 10 mm
l
l
RthJA ≤ 70 K/W
PCB: d = 25 mm
TL = constant
0
20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
0
5
10
15
20
25
30
16454
949548
l - Lead Length (mm)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100
1000
VR = VRRM
10
Tj = 175 °C
100
10
1
1
Tj = 25 °C
0.1
0.01
0.001
0.0
0.4
0.8
1.2
1.6
2.0
25
50
75
100
125
150
175
16455
16453
VF - Forward Voltage (V)
Tj - Junction Temperature (°C)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Reverse Current vs. Junction Temperature
Rev. 1.9. 02-May-16
Document Number: 86044
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV28-50, BYV28-100, BYV28-150, BYV28-200
www.vishay.com
Vishay Semiconductors
60
50
40
30
20
10
250
f = 1 MHz
VR = VRRM
200
150
100
50
PR - Limit
at 100 % VR
PR - Limit
at 80 % VR
0
0
25
50
75
100
125
150
175
0.1
1
10
100
16457
16456
Tj - Junction Temperature (°C)
VR - Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
4.3 (0.168) max.
Sintered Glass Case
SOD-64
Cathode Identification
1.35 (0.053) max.
26(1.014) min.
26 (1.014) min.
4 (0.156) max.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 1.9. 02-May-16
Document Number: 86044
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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