FGP10D-HE3 [VISHAY]

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode;
FGP10D-HE3
型号: FGP10D-HE3
厂家: VISHAY    VISHAY
描述:

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode

二极管
文件: 总4页 (文件大小:319K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FGP10B thru FGP10D  
New Product  
Vishay General Semiconductor  
Glass Passivated Ultrafast Rectifier  
Major Ratings and Characteristics  
®
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
100 V to 200 V  
30 A  
35 ns  
*
d
e
VF  
0.95 V  
t
n
e
t
a
IR  
2.0 µA  
P
*Glass Encapsulation  
DO-204AL (DO-41)  
Tj max.  
175 °C  
technique is covered by  
Patent No. 3,996,602,  
brazed-lead assembly  
to Patent No. 3,930,306  
Features  
Mechanical Data  
• Cavity-free glass-passivated junction  
Case: DO-204AL, molded epoxy pass glass body  
• Ideal for automated placement  
Epoxy meets UL-94V-0 Flammability rating  
• Ultrafast reverse recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer, automotive and  
Telecommunication  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol  
VRRM  
FGP10B  
100  
FGP10C  
150  
FGP10D  
200  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
70  
105  
150  
1.0  
140  
200  
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Document Number 88876  
10-Aug-05  
www.vishay.com  
1
FGP10B thru FGP10D  
Vishay General Semiconductor  
Electrical Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Test condition  
at 1.0 A (1)  
Symbol  
VF  
FGP10B  
FGP10C  
0.95  
FGP10D  
Unit  
V
Maximum instantaneous  
forward voltage  
Maximum DC reverse current  
at rated DC blocking voltage(1)  
TA= 25 °C  
TA= 100 °C  
IR  
trr  
2.0  
50  
µA  
ns  
pF  
Maximum reverse recovery  
time  
at IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
35  
Typical junction capacitance  
Notes:  
at 4.0 V, 1 MHz  
CJ  
25  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Thermal Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Maximum thermal resistance (1)  
Symbol  
RθJA  
RθJL  
FGP10B  
FGP10C  
FGP10D  
Unit  
70  
20  
°C/W  
Notes:  
(1) Units mounted on P.C.B. 10 x 10 mm copper pads  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise specified)  
30  
25  
20  
15  
1.2  
1
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
0.8  
0.6  
0.4  
0.2  
0
10  
5
0
1
10  
100  
0
25  
50  
75  
100  
125  
150  
175  
Ambient Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Maximum Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88876  
10-Aug-05  
2
FGP10B thru FGP10D  
Vishay General Semiconductor  
10,00  
1,00  
0,10  
0,01  
100  
Tj = 175 °C  
Tj = 150 °C  
Tj = 125 °C  
10  
Tj = 25 °C  
1
0,2  
0,4  
0,6  
0,8  
1
1,2  
1,4  
0,1  
1
10  
100  
Reverse Voltage (V)  
Instantaneous Forward Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
100  
100,0  
Tj = 175 °C  
10  
Tj = 150 °C  
1
Tj = 125 °C  
10,0  
0,1  
0,01  
Tj = 25 °C  
0,001  
1,0  
20  
40  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Leakage Characteristics  
60  
80  
100  
0,01  
0,1  
tp-Pulse Duration (sec)  
Figure 6. Typical Transient Thermal Impedance  
1
10  
100  
Package outline dimensions in inches (millimeters)  
DO-204AL (DO-41)  
1.0 (25.4)  
MIN.  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
0.205 (5.2)  
0.160 (4.1)  
1.0 (25.4)  
MIN.  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
Document Number 88876  
10-Aug-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

相关型号:

FGP10D-HE3/73

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode
VISHAY

FGP10DHE3/54

ULTRA FAST RECOVERY RECTFR 200V 1A 2PIN DO-204AL - Tape and Reel
VISHAY

FGP10DHE3/73

ULTRA FAST RECOVERY RECTFR 200V 1A 2PIN DO-204AL AMMO - Ammo Pack
VISHAY

FGP10N60UNDF

600V, 10A Short Circuit Rated IGBT
FAIRCHILD

FGP10N60UNDF

IGBT,600V,10A,短路额定
ONSEMI

FGP15N60UNDF

600V, 15A Short Circuit Rated IGBT
FAIRCHILD

FGP15N60UNDF

IGBT,600V,15A,短路额定
ONSEMI

FGP20B

Glass Passivated Ultrafast Rectifier
VISHAY

FGP20B

2A plug-in fast recovery diode 100V DO-15 series
SUNMATE

FGP20B-E3

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Rectifier Diode
VISHAY

FGP20B-E3/54

暂无描述
VISHAY

FGP20B-HE3

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Rectifier Diode
VISHAY