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G2B-E3/54 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS, G-1, 2 PIN;
G2B-E3/54
型号： G2B-E3/54
厂家： VISHAY    VISHAY
描述：

Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS, G-1, 2 PIN
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G2A / B / D / G / J / K / M  
VISHAY  
Vishay Semiconductors  
Standard Sinterglass Diode  
Features  
• High temperature metallurgically bonded con-  
structed rectifiers  
• Cavity-free glass passivated junction  
• Hermetically sealed package  
• 2.0 ampere operation at Tamb = 75 °C with no ther-  
mal runaway  
Mechanical Data  
17031  
Case: DO-204AP Sintered glass case  
Terminals: Solder plated axial leads, solderable per Mounting Position: Any  
MIL-STD-750, Method 2026  
Weight: approx. 560 mg  
Polarity: Color band denotes cathode end  
Parts Table  
Part  
Type differentiation  
= 50 V  
Package  
G2A  
G2B  
G2D  
G2G  
G2J  
V
V
V
V
V
V
V
DO-204AP(G-1)  
RRM  
RRM  
RRM  
RRM  
RRM  
RRM  
RRM  
= 100 V  
= 200 V  
= 400 V  
= 600 V  
= 800 V  
= 1000 V  
DO-204AP(G-1)  
DO-204AP(G-1)  
DO-204AP(G-1)  
DO-204AP(G-1)  
DO-204AP(G-1)  
DO-204AP(G-1)  
G2K  
G2M  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Part  
G2A  
Symbol  
Value  
50  
Unit  
V
Reverse voltage = Repetitive  
peak reverse voltage  
see electrical characteristics  
V
= V  
R
RRM  
G2B  
G2D  
G2G  
G2J  
V
V
V
V
V
V
= V  
= V  
= V  
= V  
= V  
= V  
100  
200  
400  
600  
800  
1000  
2.0  
V
V
V
V
V
V
A
R
R
R
R
R
R
RRM  
RRM  
RRM  
RRM  
RRM  
RRM  
G2K  
G2M  
Maximum average forward  
rectified current  
0.375 " (9.5 mm) lead length at  
I
F(AV)  
T
= 75 °C  
amb  
Document Number 86085  
Rev. 1.3, 11-Aug-04  
www.vishay.com  
1
G2A / B / D / G / J / K / M  
Vishay Semiconductors  
VISHAY  
Parameter  
Test condition  
Part  
Symbol  
Value  
50  
Unit  
A
Peak forward surge current  
8.3 ms single half sine-wave  
superimposed on rated load  
(JEDEC Method)  
I
FSM  
Maximum full load reverse  
current  
full cycle average 0.375 "  
(9.5 mm) lead length at  
I
100  
µA  
R(AV)  
T
= 100 °C  
amb  
Operating junction and storage  
temperature range  
T , T  
- 55 to + 175  
°C  
J
STG  
Maximum Thermal Resistance  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
55  
Unit  
K/W  
1)  
R
Typical thermal resistance  
θJA  
1)  
Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Part  
G2A  
Symbol  
Min  
Typ.  
Max  
Unit  
V
Maximum instantaneous  
I
= 2 A  
V
1.2  
F
F
forward voltage  
G2B  
G2D  
G2G  
G2J  
V
V
V
V
V
V
I
1.2  
1.1  
1.1  
1.1  
1.1  
1.1  
1.0  
100  
V
V
F
F
F
F
F
F
V
V
G2K  
G2M  
V
V
Maximum reverse current  
V
V
= V  
, T  
= 25 °C  
µA  
µA  
µs  
pF  
R
R
RRM amb  
R
= V  
, T  
= 150 °C  
I
R
RRM amb  
Typical reverse recovery time  
Typical junction capacitance  
I = 0.5 A, I = 1.0 A, I = 0.25 A  
t
rr  
1.5  
15  
F
R
rr  
V
= 4.0 V, f = 1 MHz  
C
j
R
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
2.0  
1.5  
1.0  
50  
40  
30  
20  
10  
0
TJ = TJ max.  
8.3ms Single Half Sine-W ave  
(JEDEC Method)  
60HZ Resistive or  
Inductive Load  
Capacitance Load  
Inductive Load  
Ipk/IAV = 5.0  
10  
0.5  
0
20  
0.375 (9.5mm)  
Lead Length  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Number of Cycles at 60 H  
Z
gg2a_01  
gg2a_02  
Ambient T emperature (°C)  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 86085  
Rev. 1.3, 11-Aug-04  
G2A / B / D / G / J / K / M  
VISHAY  
Vishay Semiconductors  
10  
TJ = 150°C  
1
TJ = 25°C  
0.1  
Pulse Width = 300µs  
1% Duty Cycle  
0.01  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
gg2a_03  
Instantaneous Forward Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
10  
TJ = 125°C  
1
TJ = 75°C  
0.1  
TJ = 25°C  
0.01  
0
20  
40  
60  
80  
100  
gg2a_04  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics  
30  
10  
TJ = 25°C  
f = 1.0MHZ  
Vsig = 50mVp-p  
1
1
1
0
100  
gg2a_05  
Reverse Voltage (V)  
Figure 5. Typical Junction Capacitance  
Document Number 86085  
Rev. 1.3, 11-Aug-04  
www.vishay.com  
3
G2A / B / D / G / J / K / M  
Vishay Semiconductors  
VISHAY  
Package Dimensions in mm (Inches)  
0.86 (0.034)  
0.71 (0.028)  
DIA.  
25.4 (1.0)  
MIN.  
6.1 (0.240)  
MAX.  
3.8 (0.150)  
2.5 (0.100)  
DIA.  
25.4 (1.0)  
MIN.  
17030  
www.vishay.com  
4
Document Number 86085  
Rev. 1.3, 11-Aug-04  
G2A / B / D / G / J / K / M  
VISHAY  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 86085  
Rev. 1.3, 11-Aug-04  
www.vishay.com  
5

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