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GFB50N03-31B [VISHAY]

Power Field-Effect Transistor, 50A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB;
GFB50N03-31B
型号： GFB50N03-31B
厂家： VISHAY    VISHAY
描述：

Power Field-Effect Transistor, 50A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

开关 脉冲 晶体管
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GFB50N03  
N-Channel Enhancement-Mode MOSFET  
V
DS  
30V R 13 Ω I 50A  
DS(ON) m D  
D
G
TO-263AB  
0.160 (4.06)  
0.190 (4.83)  
0.380 (9.65)  
0.420 (10.67)  
S
0.045 (1.14)  
0.055 (1.40)  
0.42  
(10.66)  
0.21 (5.33)  
Min.  
D
0.33  
(8.38)  
0.055 (1.39)  
0.066 (1.68)  
0.320 (8.13)  
0.360 (9.14)  
0.575 (14.60)  
0.625 (15.88)  
PIN  
D
G
S
0.63  
(17.02)  
Dimensions in inches  
and (millimeters)  
Seating Plate  
Mounting Pad  
Layout  
0.120 (3.05)  
0.155 (3.94)  
-T-  
0.12  
(3.05)  
0.014 (0.35)  
0.096 (2.43)  
0.102 (2.59)  
0.020 (0.51)  
0.027 (0.686)  
0.037 (0.940)  
0.100 (2.54)  
0.130 (3.30)  
0.08  
(2.032)  
0.24  
(6.096)  
Mechanical Data  
Features  
Case: JEDEC TO-263 molded plastic body  
• Advanced Trench Process Technology  
Terminals: Leads solderable per MIL-STD-750,  
Method 2026  
• High Density Cell Design for Ultra Low On-Resistance  
• Specially Designed for Low Voltage DC/DC Converters  
• Fast Switching for High Efficiency  
High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
Mounting Position: Any  
Weight: 1.3g  
Packaging Codes – Options:  
31A – 800 per 13” reel (16mm tape), 8K per carton  
31B – 800 per 13” reel (16mm tape), 4K per carton  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current(1)  
Pulsed Drain Current  
30  
V
±
20  
50  
A
IDM  
100  
T
C = 25°C  
62.5  
25  
Maximum Power Dissipation  
PD  
W
TC = 100°C  
Operating Junction and Storage Temperature Range  
Lead Temperature (1/8” from case for 5 sec.)  
Junction-to-Case Thermal Resistance  
TJ, Tstg  
TL  
–55 to 150  
°C  
°C  
275  
2.0  
40  
RθJC  
RθJA  
°C/W  
°C/W  
Junction-to-Ambient Thermal Resistance  
2/16/01  
Notes: (1) Maximum DC current limited by the package  
(2) 1-in2 2oz. Cu PCB mounted  
GFB50N03  
N-Channel Enhancement-Mode MOSFET  
Electrical Characteristics(TJ = 25°C unless otherwise noted)  
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
Zero Gate Voltage Drain Current  
On-State Drain Current(1)  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250µA  
VDS = VGS, ID = 250µA  
VDS = 0V, VGS = ±20V  
VDS = 30V, VGS = 0V  
VDS ≥ 5V, VGS = 10V  
VGS = 10V, ID = 25A  
VGS = 4.5V, ID = 20A  
VDS = 10V, ID = 25A  
IS = 25A, VGS = 0V  
30  
V
1.0  
3.0  
±100  
1
nA  
µA  
A
IDSS  
ID(on)  
60  
11  
15  
40  
0.9  
13  
20  
Drain-Source On-State Resistance(1)  
RDS(on)  
mΩ  
Forward Transconductance(1)  
Diode Forward Voltage  
Dynamic(1)  
gfs  
S
V
VSD  
1.3  
VDS =15V, VGS=5V, ID=50A  
16  
35  
22  
60  
Total Gate Charge  
Qg  
VDS = 15V, VGS = 10V  
ID = 50A  
nC  
ns  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Qgs  
Qgd  
td(on)  
tr  
8
6
11  
20  
20  
80  
30  
–
VDD = 15V, RL = 15Ω  
ID ≈ 1A, VGEN = 10V  
RG = 6Ω  
11  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
48  
15  
Input Capacitance  
Ciss  
Coss  
Crss  
trr  
VGS = 0V  
VDS = 15V  
–
–
–
1850  
315  
145  
160  
Output Capacitance  
Reverse Transfer Capacitance  
Source-Drain Reverse Recovery Time  
–
pF  
ns  
f = 1.0MHZ  
–
IF = 25A, di/dt = 100A/µs  
Note:  
(1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%  
VDD  
ton  
toff  
Switching  
VIN  
Switching  
Waveforms  
RD  
td(on)  
td(off)  
tr  
90%  
tf  
90 %  
Test Circuit  
D
VOUT  
10%  
10%  
Output, VOUT  
VGEN  
INVERTED  
RG  
G
DUT  
90%  
50%  
50%  
Input, VIN 10%  
S
PULSE WIDTH  
GFB50N03  
N-Channel Enhancement-Mode MOSFET  
Ratings and  
Characteristic Curves(TA = 25°C unless otherwise noted)  
Fig. 1 – Output Characteristics  
Fig. 2 – Transfer Characteristics  
80  
60  
50  
5.0V  
VGS=10V  
VDS = 10V  
4.5V  
6.0V  
60  
4.0V  
40  
30  
20  
10  
0
40  
20  
3.5V  
TJ = 125°C  
--55°C  
3.0V  
2.5V  
25°C  
0
0
1
2
3
4
5
1
2
3
4
5
VDS -- Drain-to-Source Voltage (V)  
VGS -- Gate-to-Source Voltage (V)  
Fig. 4 – On-Resistance  
Fig. 3 – Threshold Voltage  
vs.Temperature  
vs. Drain Current  
1.8  
1.6  
1.4  
1.2  
1
0.03  
0.025  
0.02  
ID = 250µA  
VGS = 4.5V  
5V  
0.015  
10V  
0.01  
0.005  
0
0.8  
0.6  
--50  
--25  
0
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100  
TJ -- Junction Temperature (°C)  
ID -- Drain Current (A)  
Fig. 5 – On-Resistance  
vs. Junction Temperature  
1.6  
1.4  
1.2  
1
VGS = 10V  
ID = 25A  
0.8  
0.6  
--50 --25  
0
25  
50  
75  
100  
125  
150  
TJ -- Junction Temperature (°C)  
GFB50N03  
N-Channel Enhancement-Mode MOSFET  
Ratings and  
Characteristic Curves(TA = 25°C unless otherwise noted)  
Fig. 6 – On-Resistance  
vs. Gate-to-Source Voltage  
Fig. 7 – Gate Charge  
10  
8
0.04  
VDS = 15V  
ID = 15A  
ID = 25A  
0.035  
0.03  
0.025  
6
0.02  
TJ = 125°C  
4
0.015  
0.01  
25°C  
2
0.005  
0
0
2
4
6
8
10  
0
10  
20  
30  
35  
Qg -- Charge (nC)  
VGS -- Gate-to-Source Voltage (V)  
Fig. 9 – Source-Drain Diode  
Forward Voltage  
Fig. 8 – Capacitance  
2500  
2000  
100  
10  
VGS = 0V  
f = 1MHZ  
VGS = 0V  
Ciss  
1500  
TJ = 125°C  
1
25°C  
1000  
500  
--55°C  
0.1  
Coss  
Crss  
0.01  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
5
10  
15  
20  
25  
30  
VDS -- Drain-to-Source Voltage (V)  
VSD -- Source-to-Drain Voltage (V)  
GFB50N03  
N-Channel Enhancement-Mode MOSFET  
Ratings and  
Characteristic Curves(TA = 25°C unless otherwise noted)  
Fig. 10 – Breakdown Voltage  
vs. Junction Temperature  
Fig. 11 – Transient Thermal  
Impedance  
1
44  
ID = 250µA  
43  
42  
41  
40  
39  
38  
0.1  
1. Duty Cycle, D = t1/t2  
2. RθJA(t) = RθJA(norm) *RθJA  
3. RθJA = 2.0°C/W  
37  
36  
4. TJ -- TA = PDM* RθJA(t)  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
--50  
--25  
0
25  
50  
75  
100  
125  
150  
Pulse Duration (sec.)  
TJ -- Junction Temperature (°C)  
Fig. 12 – Power vs. Pulse Duration  
Fig. 13 – Maximum Safe Operating Area  
1000  
1000  
100  
10  
Single Pulse  
RθJA = 2.0°C/W  
800  
TC = 25°C  
600  
400  
R
DS(ON) Limit  
100ms  
VGS = 10V  
Single Pulse  
θJC = 2.0°C/W  
TA = 25°C  
200  
DC  
R
0
1
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
1
10  
100  
Pulse Duration (sec.)  
VDS -- Drain-Source Voltage (V)  

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