IMBD4448-V [VISHAY]
Small Signal Switching Diode; 小信号开关二极管
| 型号： | IMBD4448-V |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Switching Diode |
| 文件： | 总6页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IMBD4448-V
Vishay Semiconductors
Small Signal Switching Diode
Features
• Silicon Epitaxial Planar Diodes
3
• Fast switching diode in case SOT-23,
e3
especially suited for automatic insertion.
• This diodes are also available in other
case styles including: the DO-35 case with the
type
1
2
16923
designation 1N4448, the Mini-MELF case with the
type designation LL4448, and the SOD-123 case
with the type designation 1N4448W-V.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Ordering code
Marking
Remarks
IMBD4448-V
IMBD4448-V-GS18 or IMBD4448-V-GS08
A3
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse voltage
Test condition
Symbol
VR
Value
75
Unit
V
V
Peak reverse voltage
VRM
100
1501)
Rectified current (average) half
wave rectification with resist.
T
amb = 25 °C and f ≥ 50 Hz
IF(AV)
mA
Surge forward current
Power dissipation
t < 1 s and Tj = 25 °C
amb = 25 °C
IFSM
Ptot
500
mA
3501)
T
mW
1) Device on fiberglass substrate, see layout (SOT-23).
Document Number 85732
Rev. 1.4, 07-Apr-05
www.vishay.com
1
IMBD4448-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJA
Value
4501)
Unit
Thermal resistance junction to
ambient air
°C/W
Junction temperature
Tj
150
°C
°C
Storage temperature range
TS
- 65 to + 150
1) Device on fiberglass substrate, see layout (SOT-23).
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
IF = 5 mA
IF = 100 mA
Symbol
Min
Typ.
Max
0.72
Unit
V
VF
VF
IR
0.62
1.0
2.5
50
30
4
V
Leakage current
V
V
V
R = 70 V
µA
µA
µA
pF
ns
R = 70 V, Tj = 150 °C
R = 25 V, Tj = 150 °C
IR
IR
Diode capacitance
VF = VR = 0
Ctot
trr
Reverse recovery time
(see figures)
IF = 10 mA, IR = 10 mA,
4
VR = 6 V, RL = 100 Ω
Layout for R
test
thJA
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
0.8 (0.03)
2 (0.8)
15 (0.59)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
www.vishay.com
2
Document Number 85732
Rev. 1.4, 07-Apr-05
IMBD4448-V
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
100
10
1000
800
°
T = 100
j
C
600
°
25
C
1
400
0.1
0.01
200
0
0
20 40 60 80 100 120 140 160 180 200
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8 2
18663
T
amb
- Ambient Temperature ( °C )
18689
V
F
- Forward Voltage ( V )
Figure 1. Forward Current vs. Forward Voltage
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
10000
°
T = 25
C
j
1.1
1.0
0.9
°
T = 25
C
j
f = 1 kHz
f = 1 MHz
1000
100
0.8
0.7
10
1
0
2
4
6
8
10
0.01
0.1
1
10
100
18664
18662
I
F
- Forward Current ( mA )
V
R
- Reverse Voltage ( V )
Figure 2. Dynamic Forward Resistance vs. Forward Current
Figure 4. Relative Capacitance vs. Reverse Voltage
100
I
ν
= t /T
p
T = 1/f
p
ν
= 0
I
FRM
10
t
p
t
0.1
T
0.2
1
0.5
-5
-4
-3
-2
-1
10
10
10
10
- Pulse Length ( s )
10
1
10
18709
t
p
Figure 5. Admissible Repetitive Peak Forward Current vs. Pulse Duration
Document Number 85732
Rev. 1.4, 07-Apr-05
www.vishay.com
3
IMBD4448-V
Vishay Semiconductors
Package Dimensions in mm (Inches)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
0.4 (.016)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.4 (.016)
0.52 (0.020)
3
0.9 (0.035)
2.0 (0.079)
1
2
0.95 (.037)
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
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4
Document Number 85732
Rev. 1.4, 07-Apr-05
IMBD4448-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85732
Rev. 1.4, 07-Apr-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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