IMBF170R450M1 [INFINEON]
CoolSiC™ 1700 V, 450 mΩ SiC MOSFET采用TO-263-7增大爬电距离，针对反激式拓扑结构进行了优化，适用于众多电力应用场合下接入直流母线电压600 V至1000 V的辅助电源。;
| 型号： | IMBF170R450M1 |
| 厂家： | 
Infineon |
| 描述： | CoolSiC™ 1700 V, 450 mΩ SiC MOSFET采用TO-263-7增大爬电距离，针对反激式拓扑结构进行了优化，适用于众多电力应用场合下接入直流母线电压600 V至1000 V的辅助电源。 |
| 文件： | 总15页 (文件大小：1274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IMBF170R450M1
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Silicon Carbide MOSFET
Features
Drain
Revolutionary semiconductor material - Silicon Carbide
Optimized for fly-back topologies
Gate
pin 1
12V/0V gate-source voltage compatible with most fly-back controllers
Very low switching losses
Sense
pin 2
Source
pin 3~7
Benchmark gate threshold voltage, VGS(th) = 4.5V
Fully controllable dV/dt for EMI optimization
Benefits
Reduction of system complexity
Directly drive from fly-back controller
Efficiency improvement and cooling effort reduction
Enabling higher frequency
Potential applications
Energy generation
o
o
Solar string inverter
Solar Central inverter
Industrial power supplies
o
o
Industrial UPS
Industrial SMPS
Infrastructure – Charger
Charger
o
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Note:
the source and sense pins are not exchangeable, their exchange might lead to malfunction
recommended for forward operation mode only
Table 1
Type
Key Performance and Package Parameters
VDS
ID
RDS(on)
Tvj = 25°C, ID = 2A, VGS = 12V
Tvj,max
Marking
Package
TC = 25°C, Rth(j-c,max)
IMBF170R450M1
1700V
9.8A
450mΩ
175°C
170M1450
PG-TO263-7
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 15
www.infineon.com
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Table of contents
Table of contents
Features ........................................................................................................................................ 1
Benefits......................................................................................................................................... 1
Potential applications..................................................................................................................... 1
Product validation.......................................................................................................................... 1
Table of contents............................................................................................................................ 2
1
2
Maximum ratings ................................................................................................................... 3
Thermal resistances ............................................................................................................... 4
3
Electrical Characteristics ........................................................................................................ 5
Static characteristics...............................................................................................................................5
Dynamic characteristics..........................................................................................................................6
Switching characteristics........................................................................................................................7
3.1
3.2
3.3
4
5
6
Electrical characteristic diagrams ............................................................................................ 8
Package drawing...................................................................................................................12
Test conditions .....................................................................................................................13
Revision history.............................................................................................................................14
Datasheet
2 of 15
2.3
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Maximum ratings
1
Maximum ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the
maximum ratings stated in this datasheet.
Table 2
Maximum ratings
Parameter
Symbol
Value
Unit
V
Drain-source voltage, Tvj ≥ 25°C
VDSS
1700
DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 12V,
TC = 25°C
TC = 100°C
ID
9.8
6.9
A
A
1
Pulsed drain current, tp limited by Tvjmax, VGS = 12V
ID,pulse
24.8
Gate-source voltage2
Max transient voltage, < 1% duty cycle
Recommended turn-on gate voltage
Recommended turn-off gate voltage
Power dissipation, limited by Tvjmax
TC = 25°C
VGS
VGS,on
VGS,off
-10… 20
12… 15
0
V
Ptot
107
53
W
TC = 100°C
°C
°C
Virtual junction temperature
Storage temperature
Tvj
-55… 175
-55… 150
Tstg
Soldering temperature
Reflow soldering (MSL1 according to JEDEC J-STD-020)
Tsold
260
°C
1 verified by design
2 Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure
sound operation of the device over the planned lifetime.
Datasheet
3 of 15
2.3
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Thermal resistances
2
Thermal resistances
Table 3
Parameter
Value
Unit
Symbol Conditions
min.
typ.
1.1
max.
1.4
MOSFET thermal
resistance, junction –
case
Rth(j-c)
-
-
K/W
K/W
Thermal resistance,
junction – ambient
Rth(j-a)
leaded
-
62
Datasheet
4 of 15
2.3
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Electrical Characteristics
3
Electrical Characteristics
3.1
Static characteristics
Table 4
Static characteristics (at Tvj = 25°C, unless otherwise specified)
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Drain-source on-state
resistance
RDS(on) VGS = 12V, ID = 2A,
Tvj = 25°C
-
-
-
450
638
917
-
-
-
Tvj = 100°C
Tvj = 175°C
VGS = 15V, ID = 2A,
Tvj = 25°C
mΩ
-
364
390
Gate-source threshold
voltage
VGS(th)
(tested after 1 ms pulse at
VGS = 20V)
ID = 2.5mA, VDS = VGS
Tvj = 25°C
Tvj =175°C
V
3.5
-
4.5
3.6
5.7
-
Zero gate voltage drain
current
IDSS
VGS = 0V, VDS = 1700V
Tvj = 25°C
Tvj = 175°C
-
-
-
-
-
-
0.9
10
-
11
-
µA
Gate-source leakage
current
IGSS
VGS = 20V, VDS = 0V
VGS = -10V, VDS = 0V
VDS = 20V, ID = 2A
f = 1MHz, VAC = 25mV
100
nA
nA
S
-
-100
Transconductance
gfs
0.9
20
-
-
Internal gate resistance
RG,int
Ω
Datasheet
5 of 15
2.3
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Electrical Characteristics
3.2
Dynamic characteristics
Table 5
Parameter
Dynamic characteristics (at Tvj = 25°C, unless otherwise specified)
Value
Symbol Conditions
Unit
min.
typ.
610
16
max.
Input capacitance
Output capacitance
Reverse capacitance
Coss stored energy
Ciss
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Coss
Crss
Eoss
QG
pF
µJ
nC
VDD = 1000V, VGS = 0V,
f = 1MHz, VAC = 25mV
1.7
2.9
11
Total gate charge
VDD = 1000V, ID = 2A,
VGS = 0/12V, turn-on pulse
Gate to source charge
Gate to drain charge
QGS,pl
QGD
3.3
5.9
Datasheet
6 of 15
2.3
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Electrical Characteristics
3.3
Switching characteristics
Table 6
Switching characteristics, Inductive load 3
Symbol Conditions
Parameter
Value
Unit
min.
typ.
max.
MOSFET Characteristics, Tvj = 25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 1000V, ID = 2A,
VGS = 0/12V, RG,ext = 22Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
-
-
-
-
-
-
-
27
20
32
24
76
15
91
-
-
-
-
-
-
-
ns
µJ
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
MOSFET Characteristics, Tvj = 175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 1000V, ID = 2A,
VGS = 0/12V, RG,ext = 22Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
-
-
-
-
-
-
-
22
16
36
27
81
21
101
-
-
-
-
-
-
-
ns
µJ
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
3 The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test
setup and package. In applications, e.g. fly-back topology, the switching behavior highly depends on the
circuitry (transformer, snubber…), the switching loss in the application will be different from the datasheet
value.
Datasheet
7 of 15
2.3
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Electrical characteristic diagrams
4
Electrical characteristic diagrams
160
140
120
100
80
30
25
20
15
10
5
Rth(j-c,max)
Rth(j-c,typ)
not for linear use
60
40
20
0
0
0
25
50
75 100 125 150 175
500
1000
1500
2000
TC [ C]
VDS [V]
Figure 2
Power dissipation as a function of case
temperature limited by bond wire
(Ptot = f(TC))
Figure 1
Safe operating area (SOA)
(VGS = 0/12V, Tc = 25°C, Tj ≤ 175°C)
12
10
8
50
40
30
20
10
0
Tvj=25°C
Tvj=175°C
Rth(j-c,max)
Rth(j-c,typ)
6
4
2
0
0
25
50
75 100 125 150 175
0
5
10
15
20
TC [ C]
VGS [V]
Figure 3
Maximum DC drain to source current
as a function of case temperature
limited by bond wire (IDS = f(TC))
Figure 4
Typical transfer characteristic
(IDS = f(VGS), VDS = 20V, tP = 20µs)
Datasheet
8 of 15
2.3
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Electrical characteristic diagrams
6
5
4
3
2
1
0
1 000
750
500
250
0
VGS = 18V
VGS = 15V
-50 -25
0
25 50 75 100 125 150 175
-50 -25
0
25 50 75 100 125 150 175
Tvj [ C]
Tvj [°C]
Figure 5
Typical gate-source threshold voltage Figure 6
as a function of junction temperature
(VGS(th) = f(Tvj), IDS = 2.5mA, VGS = VDS)
Typical on-resistance as a function of
junction temperature
(RDS(on) = f(Tvj), IDS = 2A)
20
30
25
20
15
10
5
15V
12V
9V
6V
15
15V
12V
9V
6V
10
5
0
0
0
5
10
15
20
0
5
10
15
20
VDS [V]
VDS [V]
Figure 8
Typical output characteristic, VGS as
parameter
Figure 7
Typical output characteristic, VGS as
parameter
(IDS = f(VDS), Tvj=175°C, tP = 20µs)
(IDS = f(VDS), Tvj=25°C, tP = 20µs)
Datasheet
9 of 15
2.3
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Electrical characteristic diagrams
15
10
5
1000
100
10
Ciss
Coss
Crss
1
0
1
10
100
1000
0
2
4
6
8
10 12 14
VDS[V]
QG [nC]
Figure 9
Typical capacitance as a function of
drain-source voltage
Figure 10 Typical gate charge
(VGS = f(QG), IDS = 2A, VDS = 1000V, turn-on
(C = f(VDS), VGS = 0V, f = 1MHz)
pulse)
250
100
80
60
40
20
0
Etot
Eon
Eoff
225
200
175
150
125
100
75
Etot
Eon
Eoff
50
25
0
10
30
50
70
90
110
25
75
125
175
RG (Ohm)
Tvj (°C)
Figure 11 Typical switching energy losses as a
function of gate resistance
Figure 12
Typical switching energy losses as a
function of junction temperature
(E = f(Tvj), VDD = 1000V, VGS = 0V/12V,
RG,ext = 22Ω, ID = 2A, ind. load, test
circuit in Fig. E, diode: body diode at
VGS = 0V)
(E = f(RG,ext), VDD = 1000V, VGS = 0V/12V,
ID = 2A, Tvj = 175°C, ind. load, test circuit
in Fig. E, diode: body diode at
0V)
VGS =
Datasheet
10 of 15
2.3
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Electrical characteristic diagrams
100
90
80
70
60
50
40
30
20
10
0
550
td(on)
tr
500
Etot
Eon
Eoff
450
400
350
300
250
200
150
100
50
td(off)
tf
0
10
30
50
70
90
110
1
2
3
4
5
6
7
8
9
10
RG [Ohm]
ID (A)
Figure 14
Typical switching times as a
function of gate resistor
(t = f(RG,ext), VDD = 1000V, VGS = 0V/12V,
ID = 2A, Tvj = 175°C, ind. load, test
circuit in Fig. E, diode: body diode at
VGS = 0V)
Figure 13 Typical switching energy losses as a
function of drain-source current
(E = f(IDS), VDD = 1000V, VGS = 0V/12V,
RG,ext = 22Ω, Tvj = 175°C, ind. load, test
circuit in Fig. E, diode: body diode at
VGS = 0V)
1E0
1E-1
1E-2
0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
tp [s]
Figure 15 Max. transient thermal resistance (MOSFET)
(Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D)
Datasheet
11 of 15
2.3
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Package drawing
5
Package drawing
PG-TO263-7-13
Figure 16
Package drawing
Datasheet
12 of 15
2.3
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Test conditions
6
Test conditions
Figure 17
Test conditions
Datasheet
13 of 15
2.3
2021-04-12
IMBF170R450M1
CoolSiC™ 1700V SiC Trench MOSFET
Revision history
Revision history
Document
version
Date of release
Description of changes
2.1
2.2
2.3
2020-04-27
2020-12-11
2021-04-12
Final Datasheet
Correction of circuit symbol on page 1
Editorial changes
Datasheet
14 of 15
2.3
2021-04-12
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2021.
All Rights Reserved.
Important notice
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive
Electronics Council.
Warnings
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
相关型号：
IMBF170R650M1
CoolSiC™ 1700 V, 650 mΩ SiC MOSFET采用TO-263-7增大爬电距离，针对反激式拓扑结构进行了优化，适用于众多电力应用场合下接入直流母线电压600 V至1000 V的辅助电源。
INFINEON
IMBG120R030M1H
是采用D2PAK-7L (TO-263-7)封装的1200 V, 30 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。
INFINEON
IMBG120R045M1H
是采用D2PAK-7L (TO-263-7)封装的1200 V, 45 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。
INFINEON
IMBG120R090M1H
是采用D2PAK-7L (TO-263-7)封装的1200 V, 90 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。
INFINEON
IMBG120R140M1H
是采用D2PAK-7L (TO-263-7)封装的1200 V, 140 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。
INFINEON
IMBG120R220M1H
是采用D2PAK-7L (TO-263-7)封装的1200 V, 220 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。
INFINEON
IMBG120R350M1H
是采用D2PAK-7L (TO-263-7)封装的1200 V, 350 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。
INFINEON
IMBG65R022M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R022M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
IMBG65R030M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R030M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
IMBG65R057M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R057M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
IMBG65R083M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R083M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
IMBG65R163M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R163M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
INFINEON
©2020 ICPDF网 联系我们和版权申明