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元器件品牌
IRFBF30
[VISHAY]
Power MOSFET; 功率MOSFET
元器件型号：
IRFBF30
生产厂家：
VISHAY TELEFUNKEN
描述和应用：
Power MOSFET
功率MOSFET
PDF文件：
总8页 (文件大小：1010K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFBF30参数
查看货源
IRFBF30L
Power MOSFET
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156
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16
VISHAY
IRFBF30PBF
Power MOSFET
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156
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28
VISHAY
IRFBF30PBF
HEXFET Power MOSFET
Warning
: Undefined variable $rtag in
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on line
156
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58
IRF
IRFBF30STRR
Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
: Undefined variable $rtag in
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156
-
0
VISHAY
IRFBF32
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2.5A I(D) | TO-220AB
Warning
: Undefined variable $rtag in
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27
ETC
IRFBF32-006PBF
Power Field-Effect Transistor, 2.5A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
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156
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0
INFINEON
IRFBF32-013
Power Field-Effect Transistor, 2.5A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Warning
: Undefined variable $rtag in
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156
-
0
INFINEON
IRFBG20
Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A)
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413
IRF
IRFBG20
Power MOSFET
Warning
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on line
156
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235
VISHAY
IRFBG20PBF
Power MOSFET
Warning
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on line
156
-
45
VISHAY
IRFBG20PBF
HEXFET㈢ Power MOSFET
Warning
: Undefined variable $rtag in
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on line
156
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72
IRF
IRFBG20STRR
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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156
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0
VISHAY
IRFBG20STRRPBF
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
VISHAY
IRFBG22
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.2A I(D) | TO-220AB
Warning
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156
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29
ETC
IRFBG22-011
Power Field-Effect Transistor, 1.2A I(D), 1000V, 13.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Warning
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156
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0
INFINEON
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