IRFI614GPBF [VISHAY]

Power MOSFET; 功率MOSFET
IRFI614GPBF
元器件型号: IRFI614GPBF
生产厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用:

Power MOSFET
功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件: 总8页 (文件大小:1511K)
下载文档:  下载PDF数据表文档文件
型号参数:IRFI614GPBF参数

IRFI620A

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-262AA

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10 ETC

IRFI620ATU

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 FAIRCHILD

IRFI620B

200V N-Channel MOSFET

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24 FAIRCHILD

IRFI620BTU_FP001

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 FAIRCHILD

IRFI620G

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.1A)

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43 IRF

IRFI620G

Power MOSFET

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16 VISHAY

IRFI620G

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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1 VISHAY

IRFI620G-002PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-004PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-005PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-006

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-009

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-009PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-010PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI620G-011PBF

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON