SD210DE-2 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SD210DE-2 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总6页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD210DE-2/214DE-2
Vishay Siliconix
N-Channel Lateral DMOS FETs
(Available Only In Extended Hi-Rel Flow)
PRODUCT SUMMARY
Part Number
V(BR)DS Min (V)
VGS(th) Max (V)
rDS(on) Max (W)
Crss Max (pF)
tON Max (ns)
SD210DE-2
SD214DE-2
30
20
1.5
1.5
45 @ V = 10 V
0.5
0.5
2
2
GS
45 @ V = 10 V
GS
FEATURES
BENEFITS
APPLICATIONS
D Ultra-High Speed Switching—tON: 1 ns
D Ultra-Low Reverse Capacitance: 0.2 pF
D Low Guaranteed rDS @ 5 V
D High Speed System Performance
D Low Insertion Loss at High Frequencies
D Low Transfer Signal Loss
D Fast Analog Switch
D Fast Sample-and-Holds
D Pixel-Rate Switching
D DAC Deglitchers
D Low Turn-On Threshold Voltage
D N-Channel Enhancement Mode
D Simple Driver Requirement
D Single Supply Operation
D High-Speed Driver
DESCRIPTION
The SD210DE-2/214DE-2 are enhancement-mode MOSFETs
designed for high speed low-glitch switching in audio, video, and
high-frequency applications. The SD214DE-2 is normally used
for "10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switching
speeds. These MOSFETs do not have a gate protection Zener
diode which results in lower gate leakage and " voltage
capability from gate to substrate. A poly-silicon gate is featured for
manufacturing reliability.
The SD210DE/214DE are available only in the “–2” extended
hi-rel flow. The Vishay Siliconix “–2” flow complies with the
requirements of MIL-PRF-19500 for JANTX discrete devices.
For similar products see: quad array—SD5000I-2, and Zener
protected—SD211DE-2/213DE-2/215DE-2.
TO-206AF
(TO-72)
Body
Substrate
(Case)
S
1
4
3
2
D
G
Top View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 V
Gate-Substrate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "30 V
Source-Substrate Voltage
(SD210DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 15 V
(SD214DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Drain-Source Voltage
Source-Drain Voltage
Drain-Substrate Voltage
(SD210DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 30 V
(SD214DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 20 V
1
Lead Temperature ( / ” from case for 10 seconds) . . . . . . . . . . . . . . . . 300_C
16
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 125_C
(SD210DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 10 V
(SD214DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 20 V
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
(SD210DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 30 V
(SD214DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Notes:
a. Derate 3 mW/_C above 25_C
Applications Information—See Applications Note AN502
Document Number: 70294
S-02889—Rev. E, 21-Dec-00
www.vishay.com
1
SD210DE-2/214DE-2
Vishay Siliconix
a
SPECIFICATIONS
Limits
SD210DE-2
SD214DE-2
Parameter
Symbolb
Test Conditionsb
Typc Min Max Min Max Unit
Static
V
= V = 0 V, I = 10 mA
35
30
22
30
10
10
GS
BS
D
Drain-Source Breakdown Voltage
V
V
(BR)DS
V
= V = –5 V, I = 10 nA
20
20
GS
GD
BS
D
Source-Drain Breakdown Voltage
Drain-Substrate Breakdown Voltage
Source-Substrate Breakdown Voltage
V
= V = –5 V, I = 10 nA
BD S
(BR)SD
V
V
= 0 V, I = 10 nA,
D
Source Open
GB
V
35
15
15
25
25
(BR)DBO
V
V
= 0 V, I = 10 mA, Drain Open
35
0.4
0.9
0.5
0.8
0.001
0.8
58
(BR)SBO
GB
S
V
DS
= 10 V
= 20 V
= 10 V
= 20 V
10
10
Drain-Source Leakage
Source-Drain Leakage
I
V
GS
= V = –5 V
BS
DS(off)
SD(off)
V
V
10
DS
nA
V
SD
I
V
GD
= V = –5 V
BD
V
SD
10
0.1
1.5
70
Gate Leakage
I
V
= V = 0 V, V = "40 V
0.1
1.5
70
GBS
DB
SB
GB
Threshold Voltage
V
V
= V , I = 1 mA, V = 0 V
0.5
0.1
GS(th)
DS
GS
D
SB
V
GS
= 5 V
= 10 V
= 15 V
= 20 V
= 25 V
V
GS
V
GS
V
GS
V
GS
38
45
45
V
= 0 V
SB
= 1 mA
30
Drain-Source On-Resistance
r
W
DS(on)
I
D
26
24
Dynamic
g
fs
11
10
10
V
DS
= 10 V, V = 0 V, I = 20 mA
SB D
Forward Transconductance
mS
pF
f = 1 kHz
g
0.9
2.5
1.1
3.7
0.2
os
Gate Node Capacitance
Drain Node Capacitance
Source Node Capacitance
Reverse Transfer Capacitance
C
3.5
1.5
5.5
0.5
3.5
1.5
5.5
0.5
(GS+GD+GB)
C
C
(GD+DB)
(GS+SB)
V
V
= 10 V, f = 1 MHz
DS
GS
= V = –15 V
BS
C
rss
Switching
t
0.5
0.6
2
1
1
1
1
d(on)
Turn-On Time
t
r
V
SB
= 0 V, V 0 to 5 V, R = 25 W
IN G
ns
V
DD
= 5 V, R = 680 W
L
t
d(off)
Turn-Off Time
Notes:
t
6
f
a.
T
A
= 25_C unless otherwise noted.
DMCBB
b. B is is the body (substrate) and V
is breakdown.
(BR)
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Document Number: 70294
www.vishay.com
S-02889—Rev. E, 21-Dec-00
2
SD210DE-2/214DE-2
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Gate-Source Voltage
Leakage Current vs. Applied Voltage
10 nA
ID (off) @ VGS = VBG = –5 V
IS(off) @ VGD = VBD = –5V
ISBO @ VGB = 0 V, Drain Open
300
1 nA
V
= 4 V
GS
240
180
120
60
I
S(off)
100 pA
I
D(off)
I
SBO
5 V
10 pA
1 pA
10 V
16
I
GSS (Diode)
0
0
4
8
12
20
0
4
8
12
16
20
V
SB
– Source-Body Voltage (V)
Applied Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
On-Resistance vs. Temperature
20
16
100
V
DS
V
BS
= 15 V
= 0 V
I
D
= 5 mA, V = 0 V
BS
80
60
40
20
0
V
GS
= 5 V
T
A
= 55_C
12
8
25_C
10 V
20 V
15 V
125_C
4
0
–60
–20
20
60
100
140
1
10
I – Drain Current (mA)
D
100
T
A
– Temperature (_C)
Switching Characteristics
Threshold Voltage vs. Temperature
700
600
500
400
300
200
100
0
5
V
= V = V
DS TH
GS
I
D
= 1 mA
4
3
2
1
0
V
BS
= –10 V
–5 V
–0.5 V
–1 V
0 V
0
1
2
3
4
5
6
7
–60
–20
20
60
100
140
t – Fall Time (ns)
f
T
A
– Temperature (_C)
Document Number: 70294
www.vishay.com
S-02889—Rev. E, 21-Dec-00
3
SD210DE-2/214DE-2
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage vs. Substrate-Source Voltage
Leakage Current vs. Temperature
100
10
1
5
I
I
@ V = V = –5 V, V = 10 V
D(off) GS BS DS
@ V = V = –5 V, V = 10 V
S(off) GD BD SD
V
= V = V
DS TH
= 1 mA
GS
I
D
I
I
@ V = 10 V
GS
T
A
= 25_C
GSS
SBO
4
3
2
1
0
@ V = 10 V
SB
Drain Open
I
S(off)
H
L
I
D(off)
I
SBO
I
GSS
(Diode)
0
–4
–8
–12
–16
–20
25
50
T
75
100
125
V
– Body-Source Voltage (V)
– Temperature (_C)
BS
A
Capacitance vs. Gate-Source Voltage
Body Leakage Current vs. Drain-Body Voltage
10
8
100 mA
10 mA
V
V
= 10 V, f = 1 MHz
DS
GS
= V
BS
I
D
= 13 mA
1 mA
100 nA
10 nA
6
C
(GS+SB)
4
1 nA
100 pA
10 pA
1 mA
C
(GS+GD+GB)
2
0
C
(GD+DB)
C
(DG)
1 pA
0
4
8
12
16
20
0
4
8
12
16
20
V
GS
– Gate-Source Voltage (V)
V
DB
– Drain-Body Voltage (V)
Input Admittance
Forward Admittance
100
100
10
V
= 10 V
= 10 mA
= 25_C
DS
V
= 10 V
= 10 mA
= 25_C
DS
I
D
I
D
T
A
T
A
g
fs
10
b
is
g
is
1
1
–b
fs
0.1
0.1
100
200
500
1000
100
200
500
1000
f – Frequency (MHz)
f – Frequency (MHz)
Document Number: 70294
www.vishay.com
S-02889—Rev. E, 21-Dec-00
4
SD210DE-2/214DE-2
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
9
Reverse Admittance
Output Admittance
1
100
10
V
= 10 V
= 10 mA
V
= 10 V
= 10 mA
= 25_C
DS
DS
I
D
I
D
T
A
= 25_C
T
A
b
rs
0.1
+g
rg
b
og
–g
rg
0.01
1
g
og
0.001
0.1
100
200
f – Frequency (MHz)
1000
100
200
f – Frequency (MHz)
1000
500
500
Output Conductance vs. Drain Current
Output Characteristics
1.0
50
V
T
A
= 0 V
= 25_C
V
= 0 V
BS
BS
f = 1 kHz
0.8
0.6
0.4
0.2
0
40
30
20
10
0
V
DS
= 5 V
V
GS
= 5 V
4 V
10 V
3 V
2 V
15 V
0
4
8
12
16
20
0
4
8
12
16
20
I
D
– Drain Current (mA)
V
DS
– Drain-Source Voltage (V)
SWITCHING TIME TEST CIRCUIT
To
Scope
+V
DD
+5 V
V
IN
50%
510 W
R
L
V
OUT
To Scope
0 V
Input pulse: td, tr < 1 ns
Pulse width: 100 ns
Rep rate: 1 MHz
t
t
d(off)
d(on)
V
IN
+V
DD
Sampling Scope
90%
V
OUT
tr < 360 ps
50%
51 W
RIN = 1 MW
CIN = 2 pF
BW = 500 MHz
10%
0 V
t
r
t
f
Document Number: 70294
www.vishay.com
S-02889—Rev. E, 21-Dec-00
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
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CALOGIC
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