SFH615AA-X006 [VISHAY]
Optocoupler, High Reliability, 5300 VRMS; 光电耦合器，高可靠性， 5300 VRMS
| 型号： | SFH615AA-X006 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, High Reliability, 5300 VRMS |
| 文件： | 总7页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
VISHAY
Vishay Semiconductors
Optocoupler, High Reliability, 5300 VRMS
Features
• Low CTR Degradation
• Good CTR Linearity Depending on Forward Cur-
rent
• Isolation Test Voltage, 5300 VRMS
• High Collector-emitter Voltage, VCEO = 70 V
• Low Saturation Voltage
C
E
A
C
4
3
1
2
• Fast Switching Times
• Temperature Stable
i179060
• Low Coupling Capacitance
• End-Stackable, .100 " (2.54 mm) Spacing
• High Common-mode Interference Immunity
Order Information
(Unconnected Base)
Part
Remarks
SFH615AA
CTR 50 - 600 %, DIP-4
Agency Approvals
SFH615AB
CTR 80 - 260 %, DIP-4
• UL - File No. E52744 System Code H or J
SFH615ABL
SFH615ABM
SFH615AGB
SFH615AGR
SFH615AY
CTR 200 - 600 %, DIP-4
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
CTR 200 - 400 %, DIP-4
CTR 100 - 600 %, DIP-4
CTR 100 - 300 %, DIP-4
CTR 50 - 150 %, DIP-4
Description
SFH615AA-X006
SFH615AA-X007
CTR 50 - 600 %, DIP-4 400 mil (option 6)
CTR 50 - 600 %, SMD-4 (option 7)
The SFH615XXX features a large assortment of cur-
rent transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infra-
red emitting diode emitter, which is optically coupled
to a silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
SFH615ABM-X006 CTR 200 - 400 %, DIP-4 400 mil (option 6)
SFH615ABM-X007 CTR 200 - 400 %, SMD-4 (option 7)
SFH615AGB-X006 CTR 100 - 600 %, DIP-4 400 mil (option 6)
SFH615AGB-X009 CTR 100 - 600 %, SMD-4 (option 9)
SFH615AGR-X006 CTR 100 - 300 %, DIP-4 400 mil (option 6)
SFH615AGR-X007 CTR 100 - 300 %, SMD-4 (option 7)
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
SFH615AY-X006
SFH615AY-X008
SFH615AY-X009
CTR 50 - 150 %, DIP-4 400 mil (option 6)
CTR 50 - 150 %, SMD-4 (option 8)
CTR 50 - 150 %, SMD-4 (option 9)
Creepage and clearance distances of > 8 mm are
achieved with option 6. This version complies with
60950 (DIN VDE 0805) for reinforced insulation up to
operation voltage of 400 VRMS or DC.
For additional information on the available options refer to
Option Information.
Document Number 83672
Rev. 1.4, 19-Apr-04
www.vishay.com
1
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
6.0
Unit
V
Reverse voltage
V
R
DC Forward current
Surge forward current
Power dissipation
I
60
2.5
100
mA
A
F
t
≤ 1.0 ms
I
FSM
p
P
mW
diss
Output
Parameter
Test condition
Symbol
Value
70
Unit
V
Collector-emitter voltage
V
V
EC
CE
Emitter-collector voltage
Collector current
7.0
50
V
I
mA
mA
mW
C
t
≤ 1.0 ms
I
100
150
p
C
Total power dissipation
P
diss
Coupler
Parameter
Test condition
Symbol
Value
5300
Unit
Isolation test voltage between
emitter and detector, refer to
climate DIN 40046 part 2,
Nov.74
V
V
RMS
ISO
Creepage
Clearance
≥ 7.0
≥ 7.0
≥ 175
mm
mm
Insulation thickness between
emitter and detector
comparative tracking index per
DIN IEC 112/VDEO 303, part 1
12
Isolation resistance
V
V
= 500 V, T
= 25 °C
R
Ω
Ω
IO
IO
amb
IO
IO
≥ 10
11
= 500 V, T
= 100 °C
R
amb
≥ 10
Storage temperature range
Ambient temperature range
Junction temperature
T
- 55 to + 150
- 55 to + 100
100
°C
°C
°C
°C
stg
T
amb
T
j
Soldering temperature
max. 10 s. dip soldering
distance to seating plane
≥ 1.5 mm
T
260
sld
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2
Document Number 83672
Rev. 1.4, 19-Apr-04
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
VISHAY
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
Typ.
1.25
Max
1.65
Unit
V
Forward voltage
I = 60 mA
V
I
F
F
Reverse current
Capacitance
V
= 6.0 V
0.01
13
10
µA
pF
R
R
V
= 0 V, f = 1.0 MHz
C
R
O
Thermal resistance
R
750
K/W
thja
Output
Parameter
Test condition
Symbol
Min
Typ.
5.2
Max
Unit
pF
Collector-emitter capacitance
V
= 5 V, f = 1.0 MHz
C
CE
CE
Thermal resistance
R
500
K/W
thja
Coupler
Parameter
Test condition
I = 10 mA, I = 2.5 mA
Part
Symbol
Min
Typ.
0.25
Max
0.4
Unit
Collector-emitter saturation
voltage
V
V
F
C
CEsat
Coupling capacitance
C
0.4
10
pF
nA
C
Collector-emitter leakage
current
V
= 10 V
SFH615AA
I
100
CEO
CEO
SFH615AGB
SFH615AGR
SFH615ABM
SFH615ABL
SFH615AY
I
I
I
I
I
I
10
10
10
10
10
10
100
100
100
100
100
100
nA
nA
nA
nA
nA
nA
CEO
CEO
CEO
CEO
CEO
CEO
SFH615AB
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
CTR
Min
50
Typ.
Max
600
Unit
%
I /I
I = 5.0 mA, V = 5.0 V
SFH615AA
C
F
F
CE
SFH615AGB
SFH615AGR
SFH615ABM
SFH615ABL
SFH615AY
CTR
CTR
CTR
CTR
CTR
CTR
100
100
200
200
50
600
300
400
600
150
260
%
%
%
%
%
%
SFH615AB
80
Document Number 83672
Rev. 1.4, 19-Apr-04
www.vishay.com
3
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Vishay Semiconductors
VISHAY
Switching Characteristics
Parameter
Turn-on time
Turn-off time
Test condition
Symbol
Min
Typ.
2.0
Max
Unit
I
I
= 5.0 mA
t
µs
F
F
on
= 5.0 mA
t
25
µs
off
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
f = 1.0 MHz
IF
1 Ω
VCC = 5 V
47 Ω
isfh615aa_01
isfh615aa_03
Fig. 1 Switching Operation (with Saturation)
Fig. 3 Transistor Capacitance (typ.) vs. Collector-Emitter Voltage
I
= 10 mA, V
= 5.0 V
CC
F
isfh615aa_04
isfh615aa_02
Fig. 2 Current Transfer Ratio (typical) vs. Temperature
Fig. 4 Permissible Diode Forward Current vs. Ambient
Temperature
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4
Document Number 83672
Rev. 1.4, 19-Apr-04
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
VISHAY
Vishay Semiconductors
isfh615aa_05
isfh615aa_08
Fig. 5 Output Characteristics (typ.) Collector Current vs.
Collector-Emitter Voltage
Fig. 8 Permissible Power Dissipation vs. Temperature
Pulse cycle
D = parameter,
isfh615aa_06
Fig. 6 Permissible Pulse Handling Capability Forward Current vs.
Pulse Width
isfh615aa_07
Fig. 7 Diode Forward Voltage (typ.) vs. Forward Current
Document Number 83672
Rev. 1.4, 19-Apr-04
www.vishay.com
5
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Vishay Semiconductors
VISHAY
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
ISO Method A
3
4
.179 (4.55)
.190 (4.83)
.300 (7.62) typ.
.031 (.79) typ.
.050 (1.27) typ.
.030 (.76)
.045 (1.14)
.130 (3.30)
.150 (3.81)
.230 (5.84)
.250 (6.35)
10°
4°
typ.
.110 (2.79)
.130 (3.30)
.020 (.508 )
.035 (.89)
.050 (1.27)
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
i178027
.100 (2.54)
Option 7
.300 (7.62)
TYP.
Option 6
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.331 (8.4)
MIN.
.400 (10.16)
.430 (10.92)
.406 (10.3)
MAX.
Option 9
.375 (9.53)
.395 (10.03)
Option 8
.300 (7.62)
TYP.
.300 (7.62)ref.
0040 (.102)
0098 (.249)
.020 (0.50)
.000 (0.00)
.150 (3.81)
.130 (3.30)
.012 (.30) typ.
.365 (9.27)
.020 (.51)
MIN.
.040 (1.02)
.315 (8.00)
min.
15° max.
.472 (12.00)
MAX.
18486
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6
Document Number 83672
Rev. 1.4, 19-Apr-04
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83672
Rev. 1.4, 19-Apr-04
www.vishay.com
7
相关型号：
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VISHAY
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