SFX [VISHAY]

Thin Film, Top-Contact Megohm Resistor;


型号：	SFX
厂家：	VISHAY
描述：	Thin Film, Top-Contact Megohm Resistor
文件：	总3页 (文件大小：74K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SFX

www.vishay.com

Vishay Electro-Films

Thin Film, Top-Contact Megohm Resistor

FEATURES

• Wire bondable

• Megohm resistance range: 0.51 M to 20 M

• Chip size: 0.040 inches square standard, 0.030

inches square and 0.055 inches square optional

• Case: 0404

• Reduced hybrid size

Product may not be to scale

• Resistor material: Tantalum nitride, self-passivating

• Oxidized silicon substrate

The SFX series resistor chips extends the range of available

resistance to 20 M These offer one of the best

combinations of small size and high value available.

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

The SFXs are manufactured using Vishay Electro-Films (EFI)

sophisticated thin film equipment and manufacturing

technology. The SFXs are 100 % electrically tested and

visually inspected to MIL-STD-883, method 2032 class H or

class K.

APPLICATIONS

The SFX series megohm resistor chips are designed for use

in hybrid packages which require small-size high-value

resistors.

TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES, AND TOLERANCES

PARAMETER

VALUE

UNIT



Total Resistance Range

Standard Tolerances

TCR

360K to 30M

0.1, 0.5

50, 100, 250, 350

ppm/°C

Tightest Standard Tolerance Available

0.1 % 0.ꢀ %

SIZE (in inches)

MIN.

MAX.

0.030 x 0.030

0.040 x 0.040

0.055 x 0.055

360 k

10 M

20 M

30 M

ꢀ0 ꢁꢁpm/°

100 ꢁꢁpm/°

2ꢀ0 ꢁꢁpm/°

3ꢀ0 ꢁꢁpm/°

510 k

1 M

360 kΩ

2 MΩ

10 MΩ

3.3 MΩ

30 MΩ

STANDARD ELECTRICAL SPECIFICATIONS

PARAMETER

VALUE

UNIT

Noise, MIL-STD-202, Method 308

- 12 typ.

Moisture Resistance, MIL-STD-202

Method 106, (Passivated only)

0.5 max. R/R

Stability, 1000 h, + 125 °C, 10 mW

1.0 max. R/R

- 55 to + 125

0.25 max. R/R

0.5 max. R/R

400

°C

Operating Temperature Range

Thermal Shock, MIL-STD-202, Method 107, Test Condition F

High Temperature Exposure, + 150 °C, 100 h

Dielectric Voltage Breakdown

Insulation Resistance

10¹²min.



Operating Voltage

100 max.

DC Power Rating at + 70 °C (Derated to zero at + 175 °C)

5 x Rated Power Short-Time Overload, + 25 °C, 5 s

0.020

0.25 max. R/R

Revision: 04-Mar-13

Document Number: 61018

For technical questions, contact: efi@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SFX

www.vishay.com

Vishay Electro-Films

DIMENSIONS in inches (millimeters)

ꢀ.ꢀꢀ2 ( ꢀ.ꢀ05

0.00ꢀ

0.030 (0.76)

0.040 (1.01)

0.055 (1.40)

0.027 (0.69)

0.037 (0.94)

0.052 (1.32)

0.00ꢀ

SCHEMATIC

MECHANICAL SPECIFICATIONS

PARAMETER

VALUE

Chip Size

Per table above

Chip Thickness

0.010" 0.002" (0.254 mm 0.050 mm)

Oxidized silicon, 10 kÅ minimum SiO₂

Tantalum nitride, self-passivating

Chip Substrate Material

Resistor Material

Bonding Pad Size

Number of Pads

0.005" x 0.005" (0.127 mm x 0.127 mm)

Pad Material

10 kÅ minimum aluminum (gold pads available)

None, lapped semiconductor silicon (gold back available)

Backing

GLOBAL PART NUMBER INFORMATION

Global Part Number: SFX20ꢀꢀ3KR4GGKWS

Global Part Number Description: SFX 2.0M 1ꢀ % ꢀ ppm/°C/- 20ꢀ ppm/°C 4ꢀ Au Au

K WS

ꢀ

RESISTANCE

MODEL RESISTANCE MULTIPLIER

CODE

TOLERANCE

CODE

TCR

(ppm/°C)

BACK

METAL

VISUAL

CLASS

PACKAGING

CODE

SIZE

TERMINATION

SFX

The first

4 digits are

significant

figures of

resistance

2 = 100

3 = 1000

4 = 10 000

B = 0.1 %

C = 0.25 %

D = 0.5 %

F = 1.0 %

G = 2.0 %

J = 5.0 %

E = 25 3 = 30 x 30

C = 50 4 = 40 x 40

K = 100 0 = 55 x 55

M = 250

G = Au

A = Al

G = Au H = Class H

WS =

N = None K = Class K Waffle pack,

High

value

TaN on

silicon

100 min,

1 mult

W = 350

I = 0/- 200

K = 10.0 % R = 0/- 250

P = 0/- 350

Revision: 04-Mar-13

Document Number: 61018

For technical questions, contact: efi@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference

to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21

conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000

SFX [VISHAY]

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