SI1021R-T1-GE3 [VISHAY]
P-Channel 60-V (D-S) MOSFET; P通道60 -V （D -S ）的MOSFET
| 型号： | SI1021R-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 60-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1021R
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
•
•
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Halogen-free Option Available
VDS(min.) (V)
RDS(on) (Ω)
VGS(th) (V)
ID (mA)
TrenchFET® Power MOSFETs
High-Side Switching
4.0 at VGS = - 10 V
- 60
- 1 to 3.0
- 190
RoHS
COMPLIANT
Low On-Resistance: 4 Ω
Low Threshold: - 2 V (typ.)
Fast Switching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
Miniature Package
ESD Protected: 2000 V
SC-75A
(SOT-416)
APPLICATIONS
•
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
G
S
1
2
•
•
•
3
D
Marking Code: F
BENEFITS
Top View
Ordering Information: Si1021R-T1-E3 (Lead (Pb)-free)
•
•
•
•
•
•
Ease in Driving Switches
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
Small Board Area
Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 60
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TA = 25 °C
A = 85 °C
- 190
- 135
- 650
250
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentb
ID
T
mA
IDM
PD
TA = 25 °C
TA = 85 °C
Power Dissipationa
mW
130
Maximum Junction-to-Ambienta
Operating Junction and Storage Temperature Range
RthJA
500
°C/W
°C
TJ, Tstg
- 55 to 150
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71410
S-81543-Rev. D, 07-Jul-08
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1
Si1021R
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS = 0 V, ID = - 10 µA
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
- 60
- 1
V
VGS(th)
VDS = VGS, ID = - 0.25 mA
- 3.0
10
VDS = 0 V, VGS
=
=
20 V
10 V
µA
V
DS = 0 V, VGS
200
500
100
- 25
- 250
IGSS
Gate-Body Leakage
V
DS = 0 V, VGS
=
10 V, TJ = 85 °C
V
DS = 0 V, VGS = 5 V
nA
VDS = - 50 V, VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
V
DS = - 50 V, VGS = 0 V, TJ = 85 °C
V
DS = -10 V, VGS = - 4.5 V
- 50
ID(on)
mA
VDS = -10 V, VGS = - 10 V
VGS = - 4.5 V, ID = - 25 mA
VGS = - 10 V, ID = - 500 mA
- 600
8
4
6
Drain-Source On-State Resistancea
Forward Transconductance
RDS(on)
Ω
V
GS = - 10 V, ID = - 500 mA, TJ = 125 °C
VDS = - 10 V, ID = - 100 mA
gfs
80
80
mS
V
Diode Forward Voltagea
VSD
VDS = - 200 mA, VGS = 0 V
Dynamic
Qg
Qgs
Qgd
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1.7
0.26
0.46
23
VDS = - 30 V, VGS = - 15 V, ID ≅ - 500 mA
nC
pF
VDS = - 25 V, VGS = 0 V, f = 1 MHz
10
5
Switchingb
tON
VDD = - 25 V, RL = 150 Ω,
ID ≅ - 200 mA, VGEN = - 10 V, RG = 10 Ω
Turn-On Time
Turn-Off Time
20
35
ns
tOFF
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71410
S-81543-Rev. D, 07-Jul-08
Si1021R
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
1.0
0.8
0.6
0.4
0.2
0.0
1200
900
600
300
0
V
= 10 V
GS
T = - 55 °C
J
7 V
6 V
8 V
25 °C
125 °C
5 V
4 V
0
1
2
3
4
5
0
2
4
6
8
10
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
20
16
12
8
40
32
24
16
8
V
= 0 V
GS
V
= 4.5 V
GS
C
iss
V
= 5 V
GS
C
oss
V
= 10 V
GS
4
C
rss
0
0
0
200
400
600
800
1000
0
5
10
15
20
25
I
D
- Drain Current (mA)
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
1.8
1.5
1.2
0.9
0.6
0.3
0.0
15
12
9
I
D
= 500 mA
V
= 30 V
V
= 10 V at 500 mA
DS
GS
V
= 48 V
DS
V
= 4.5 V at 25 mA
GS
6
3
0
- 50 - 25
0
25
50
75
100 125 150
0.0
0.3
0.6
0.9
1.2
1.5
1.8
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 71410
S-81543-Rev. D, 07-Jul-08
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Si1021R
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
10
1000
V
= 0 V
GS
8
I
D
= 500 mA
100
6
T = 125 °C
J
4
I
D
= 200 mA
10
1
T = 25 °C
J
2
T = - 55 °C
J
0
0.00
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
SD
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
0.5
0.4
3
I
D
= 250 µA
2.5
0.3
2
0.2
1.5
0.1
- 0.0
- 0.1
- 0.2
- 0.3
1
0.5
0
T
A
= 25 °C
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
J
- Junction Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage Variance Over Temperature
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 500 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71410.
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Document Number: 71410
S-81543-Rev. D, 07-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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