SI1032X-T1 [VISHAY]
N-Channel 20-V (D-S) MOSFET; N通道20 -V （D -S ）的MOSFET
| 型号： | SI1032X-T1 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1032R/X
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (mA)
1.5-V Rated
5 @ V = 4.5 V
200
175
150
50
GS
7 @ V = 2.5
V
GS
20
9 @ V = 1.8 V
GS
10 @ V = 1.5 V
GS
FEATURES
BENEFITS
APPLICATIONS
D Low-Side Switching
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D Low On-Resistance: 5 W
D Low Threshold: 0.9 V (typ)
D Fast Switching Speed: 35 ns
D 1.8-V Operation
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
D Low Battery Voltage Operation
D Gate-Source ESD Protection
SC-75A or SC-89
G
S
1
Ordering Information:
SC-75A (SOT-416): Si1032R-T1
SC-75A (SOT-416): Si1032R-T1—E3 (Lead Free)
SC-89 (SOT-490): Si1032X-T1
3
D
SC-89 (SOT-490): Si1032X-T1—E3 (Lead Free)
2
Marking Code: G
Top View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Si1032X
Si1032R
5 secs
Steady State
5 secs Steady State
Parameter
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
DS
V
V
GS
"6
T
= 25_C
= 85_C
140
200
210
150
200
140
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
110
100
mA
a
Pulsed Drain Current
I
500
600
DM
a
Continuous Source Current (diode conduction)
I
250
280
145
200
250
130
300
340
170
240
300
150
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation for SC-75
P
mW
D
T
A
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
T , T
−55 to 150
_C
V
J
stg
ESD
2000
Notes
c. Surface Mounted on FR4 Board.
Document Number: 71172
S-40574—Rev. C, 29-Mar-04
www.vishay.com
1
Si1032R/X
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V , I = 250 mA
0.40
0.7
1.2
V
GS
D
V
DS
= 0 V, V = "2.8 V
GS
"0.5
"1.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V = "4.5 V
"1.0
"3.0
GS
mA
V
= 20 V, V = 0 V
1
DS
GS
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V = 0 V, T = 55_C
10
GS
J
a
On-State Drain Current
I
V
DS
= 5 V, V = 4.5 V
250
mA
D(on)
GS
V
= 4.5 V, I = 200 mA
5
7
9
GS
D
V
= 2.5 V, I = 175 m A
D
GS
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 1.8 V, I = 150 m A
D
10
V
= 1.5 V, I = 40 mA
D
DS
DS
a
Forward Transconductance
g
0.5
S
V
V
= 10 V, I = 200 mA
D
fs
a
Diode Forward Voltage
V
SD
I
S
= 150 mA, V = 0 V
1.2
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
750
75
g
Q
Q
V
D
= 10 V, V = 4.5 V, I = 150 mA
pC
ns
gs
gd
DS
GS
D
225
t
50
25
50
25
d(on)
t
r
V
DD
= 10 V, R = 47 W
L
I
^ 200 mA, V
= 4.5 V, R = 10 W
GEN G
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (T = 25_C UNLESS NOTED)
A
Output Characteristics
Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
0.0
600
500
400
300
200
100
0
T
= −55_C
J
V
GS
= 5 thru 1.8 V
25_C
125_C
1 V
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71172
S-40574—Rev. C, 29-Mar-04
www.vishay.com
2
Si1032R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS NOTED)
A
On-Resistance vs. Drain Current
Capacitance
50
40
30
20
10
0
100
80
60
40
20
0
V
= 0 V
GS
f = 1 MHz
C
iss
V
GS
= 1.8 V
C
oss
V
V
= 2.5 V
= 4.5 V
GS
GS
C
rss
0
50
100
150
200
250
0
4
8
12
16
20
I
D
− Drain Current (mA)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
1.60
5
V
D
= 10 V
DS
I
= 150 mA
1.40
1.20
1.00
0.80
0.60
4
3
2
1
0
V
D
= 4.5 V
GS
I
= 200 mA
V
D
= 1.8 V
GS
I
= 175 mA
−50
−25
0
25
50
75
100
125
0.0
0.2
Q
0.4
0.6
0.8
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
1000
100
10
T
= 125_C
J
40
30
I
D
= 200 mA
T
= 25_C
J
I
D
= 175 mA
20
10
0
T
= 50_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
6
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71172
S-40574—Rev. C, 29-Mar-04
www.vishay.com
3
Si1032R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS NOTED)
A
Threshold Voltage Variance vs. Temperature
I
vs. Temperature
GSS
0.3
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.2
I
D
= 0.25 mA
0.1
−0.0
−0.1
−0.2
−0.3
V
GS
= 2.8 V
−50
−25
0
25
50
75
100
125
−50
−25
0
25
50
75
100
125
T
− Temperature (_C)
T
J
− Temperature (_C)
J
BV
vs. Temperature
GSS
7
6
5
4
3
2
1
0
−50
−25
0
25
50
75
100
125
T
− Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only)
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 500_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71172
S-40574—Rev. C, 29-Mar-04
www.vishay.com
4
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