SI1330EDL-T1-E3 [VISHAY]
TRANS MOSFET N-CH 60V 0.24A 3PIN SC-70 - Tape and Reel;
| 型号： | SI1330EDL-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANS MOSFET N-CH 60V 0.24A 3PIN SC-70 - Tape and Reel 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1330EDL
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
0.25
0.23
0.05
Definition
2.5 at VGS = 10 V
3 at VGS = 4.5 V
8 at VGS = 3 V
•
•
•
TrenchFET® Power MOSFET
ESD Protected: 2000 V
Compliant to RoHS Directive 2002/95/EC
60
APPLICATIONS
•
P-Channel Driver
- Notebook PC
- Servers
SOT-323
SC-70 (3-LEADS)
D
G
S
1
Marking Code
3
D
KD XX
Lot Traceability
and Date Code
G
2
Part # Code
Top View
Ordering Information: Si1330EDL-T1-E3 (Lead (Pb)-free)
Si1330EDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
5 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
20
TA = 25 °C
TA = 70 °C
0.25
0.2
0.24
0.19
Continuous Drain Current (TJ = 150 °C)a
ID
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
IDM
IS
1.0
0.26
0.31
0.20
0.23
0.28
0.18
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
355
Maximum
400
Unit
t ≤ 5 s
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
380
450
°C/W
RthJF
285
340
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 72861
S10-0721-Rev. B, 29-Mar-10
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1
Si1330EDL
Vishay Siliconix
a
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Limits
Typ.
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
V
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 10 µA
VDS = VGS, ID = 250 µA
60
1
2.0
2.5
1
VDS = 0 V, VGS
=
10 V
VDS = 60 V, VGS = 0 V
1
µA
Zero Gate Voltage Drain Current
On-State Drain Currentb
IDSS
VDS = 60 V, VGS = 0 V, TJ = 55 °C
10
V
GS = 10 V, VDS = 7.5 V
0.5
0.4
ID(on)
VGS = 4.5 V, VDS = 10 V
VGS = 3 V, VDS = 10 V
VGS = 10 V, ID = 0.25 A
VGS = 4.5 V, ID = 0.2 A
VGS = 3 V, ID = 0.025 A
VDS = 10 V, ID = 0.25 A
IS = 0.23 A, VGS = 0 V
A
0.05
1.0
1.4
2.5
3
Drain-Source On-Resistanceb
RDS(on)
Ω
3.0
8
Forward Transconductanceb
Diode Forward Voltage
Dynamicb
gfs
350
0.83
mS
V
VSD
1.2
0.6
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Qg
Qgs
Qgd
Rg
0.4
0.11
0.15
173
3.8
VDS = 10 V, VGS = 4.5 V
nC
ID ≅ 0.25 A
Ω
td(on)
tr
td(off)
tf
10
15
20
15
Turn-On Time
Turn-Off Time
VDD = 30 V, RL = 150 Ω
ID ≅ 0.2 A, VGEN = 10 V
Rg = 10 Ω
4.8
ns
12.8
9.6
Notes:
a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
0.8
0.6
0.4
0.2
0.0
1.0
T = - 55 °C
J
6 V
5 V
V
= 10 V, 7 V
GS
25 °C
0.8
0.6
0.4
125 °C
4 V
3 V
0.2
0
0
1
2
3
4
5
0
1
2
3
4
5
V
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
DS
Transfer Characteristics
Output Characteristics
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Document Number: 72861
S10-0721-Rev. B, 29-Mar-10
Si1330EDL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
7
6
5
4
3
2
1
0
4.0
3.5
3.0
2.5
V
= 10 V
= 250 mA
DS
I
D
V
= 4.5 V
GS
2.0
1.5
1.0
0.5
0.0
V
= 10 V
GS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0
0.2
0.4
0.6
0.8
1.0
Q
g
- Total Gate Charge (nC)
I
- Drain Current (mA)
D
On-Resistance vs. Drain Current
Gate Charge
1000
2.0
1.6
1.2
0.8
0.4
0.0
V
= 10 V at 250 mA
GS
V
= 0 V
GS
100
10
1
V
= 4.5 V
GS
at 200 mA
T = 125 °C
J
T = 25 °C
J
T = - 55 °C
J
0
0.3
0.6
0.9
1.2
1.5
- 50 - 25
0
25
50
75
100 125 150
V
- Source-to-Drain Voltage (V)
SD
T - Junction Temperature (°C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
0.4
0.2
5
4
3
2
1
0
I
D
= 200 mA
I
D
= 250 µA
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0
25
50
75
100 125 150
0
2
4
6
8
10
T - Temperature (°C)
J
V
- Gate-to-Source Voltage (V)
GS
On-Resistance vs. Gate-Source Voltage
Threshold Voltage Variance over Temperature
Document Number: 72861
S10-0721-Rev. B, 29-Mar-10
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3
Si1330EDL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
5
I
DM
Limited
Limited by R
*
DS(on)
4
3
1
1 ms
0.1
T
A
= 25 °C
10 ms
I
D(on)
2
1
0
Limited
100 ms
T
= 25 °C
0.01
A
1 s
10 s, DC
Single Pulse
BVDSS Limited
10
0.001
-2
-1
10
10
1
10
100
600
0.1
1
100
Time (s)
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
GS
GS
DS(on)
Single Pulse Power
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 380 °C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-
-
-
-
1
4
3
2
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72861.
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Document Number: 72861
S10-0721-Rev. B, 29-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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