SI1970DH-T1-GE3 [VISHAY]
DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel;
| 型号： | SI1970DH-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1970DH
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
Definition
1.3a
1.3a
0.225 at VGS = 4.5 V
0.345 at VGS = 2.5 V
•
•
TrenchFET® Power MOSFET
Compliant to RoHS Directive 2002/95/EC
30
1.15 nC
APPLICATIONS
Load Switch for Portable Applications
SOT-363
SC-70 (6-LEADS)
•
D
1
D
2
S
1
G
1
D
2
1
2
3
6
D
1
Marking Code
CD XX
5
4
G
2
Lot Traceability
and Date Code
G
1
G
2
S
2
Part # Code
Top View
S
S
2
1
Ordering Information: Si1970DH-T1-E3 (Lead (Pb)-free)
Si1970DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
12
TC = 25 °C
1.3a
TC = 70 °C
TA = 25 °C
TA = 70 °C
1.3a
1.3a
Continuous Drain Current (TJ = 150 °C)
ID
1.1
A
Pulsed Drain Current
IDM
IS
4
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
1.0
Continuous Source-Drain Diode Current
0.61c
1.25
0.8
0.74b, c
0.47b, c
- 55 to 150
260
Maximum Power Dissipation
PD
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Symbol
RthJA
Typical
130
Maximum
170
Unit
t ≤ 5 s
°C/W
Steady State
RthJF
80
100
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 220 °C/W.
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
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1
Si1970DH
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
30
V
25
mV/°C
VGS(th) Temperature Coefficient
- 3.2
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = 250 µA
0.6
4
1.6
100
1
V
IGSS
VDS = 0 V, VGS
=
12 V
ns
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≤ 5 V, VGS = 4.5 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
RDS(on)
gfs
µA
A
V
10
VGS = 4.5 V, ID = 1.2 A
0.185
0.285
2.5
0.225
0.345
Drain-Source On-State Resistancea
Ω
S
VGS = 2.5 V, ID = 0.29 A
VDS = 15 V, ID = 1.2 A
Forward Transconductancea
Dynamicb
Input Capacitance
Ciss
Coss
Crss
95
17
9
Output Capacitance
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 1.4 A
pF
2.5
1.15
0.4
0.3
4
3.8
1.7
Total Gate Charge
Qg
nC
Gate-Source Charge
Qgs
Qgd
Rg
V
DS = 10 V, VGS = 4.5 V, ID = 1.4 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
Ω
Turn-On Delay Time
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tr
9
15
30
25
25
10
15
15
12
Rise Time
20
15
15
5
V
DD = 15 V, RL = 13.6 Ω
ID ≅ 1.1 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-on Delay Time
Rise Time
10
10
6
VDD = 15 V, RL = 13.6 Ω
ID ≅ 1.1 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
1
4
A
IS = 1.1 A, VGS = 0 V
0.85
20
1.2
40
20
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
10
IF = 1.1 A, dI/dt = 100 A/µs, TJ = 25 °C
16.5
3.5
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
2.0
1.6
1.2
0.8
0.4
0.0
V
GS
= 5 V thru 3.5 V
V
= 3 V
GS
GS
3
2
1
0
V
= 2.5 V
T
C
= 25 °C
V
V
= 2 V
GS
T
C
= 125 °C
1.0
= 1.5 V
GS
T
C
= - 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
150
120
90
60
30
0
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
1
2
3
4
0
5
10
15
20
25
30
V
DS
- Drain-Source Voltage (V)
I
- Drain Current (A)
D
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 1.4 A
V
GS
= 4.5 V, I = 1.4 A
D
V
DS
= 15 V
6
V
DS
= 24 V
V
GS
= 2.5 V, I = 0.3 A
D
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
- 50 - 25
0
25
50
75
100 125 150
T - Junction Temperature (°C)
J
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
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Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.8
0.6
0.4
0.2
0.0
I
D
= 1.4 A
T
= 150 °C
J
T
A
= 125 °C
T
= 25 °C
J
1.0
T
A
= 25 °C
4
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
5
V
SD
- S o urce-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Forward Diode Voltage
On-Resistance vs. Gate-Source Voltage
1.5
1.3
1.1
0.9
0.7
0.5
5
4
I
D
= 250 µA
3
2
1
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
- Temperature (°C)
Time (s)
Single Pulse Power
J
Threshold Voltage
10
*
Limited by R
DS(on)
100 µs
1
1 ms
10 ms
0.1
100 ms
1 s, 10 s
DC
T
= 25 °C
A
Single Pulse
BVDSS Limited
10
- Drain-to-Source Voltage (V)
0.01
0.1
1
100
V
DS
* V
GS
minimum V at which R is specified
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
Package Limited
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
- Case Temperature (°C)
C
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
www.vishay.com
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Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 170 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74343.
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Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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