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SI3446DV-T1-E3 [VISHAY]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
SI3446DV-T1-E3
型号： SI3446DV-T1-E3
厂家： VISHAY    VISHAY
描述：

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Si3446DV  
Vishay Siliconix  
N-Channel 2.5-V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) ( )  
ID (A)  
D 100% Rg Tested  
0.045 @ V = 4.5 V  
5.3  
4.4  
GS  
RoHS  
20  
COMPLIANT  
0.065 @ V = 2.5  
GS  
V
(1, 2, 5, 6) D  
TSOP-6  
Top View  
1
2
3
6
3 mm  
5
4
(3) G  
2.85 mm  
(4) S  
Ordering Information: Si3446DV-T1  
Si3446DV-T1–E3 (Lead (Pb)–free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
DS  
V
"12  
GS  
T
= 25_C  
= 70_C  
5.3  
4.2  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
20  
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
1.7  
T
= 25_C  
= 70_C  
2.0  
A
a
Maximum Power Dissipation  
P
D
W
T
A
1.3  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
_C/W  
62.5  
Notes  
a. Surface Mounted on FR4 Board, t v 5 sec.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 70715  
S-51451—Rev. C, 01-Aug-05  
www.vishay.com  
1
Si3446DV  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250  
A
0.6  
1.6  
V
GS(th)  
DS  
GS  
D
I
V
= 0 V, V = "12 V  
"100  
nA  
GSS  
DS  
GS  
V
= 20 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
A
A
DSS  
V
DS  
= 20 V, V = 0 V, T = 70_C  
GS  
J
a
On-State Drain Current  
I
V
DS  
= 5 V, V = 4.5 V  
10  
D(on)  
GS  
V
= 4.5 V, I = 5.3 A  
0.032  
0.045  
0.045  
0.065  
GS  
D
a
Drain-Source On-State Resistance  
r
DS(on)  
V
= 2.5 V, I = 4.4 A  
D
GS  
a
Forward Transconductance  
g
20  
S
V
V
= 10 V, I = 5.3 A  
D
fs  
DS  
a
Diode Forward Voltage  
V
SD  
I
S
= 1.7 A, V = 0 V  
1.2  
20  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
10  
2.5  
2.2  
g
Q
Q
V
= 10 V, V = 4.5 V, I = 5.3 A  
nC  
gs  
gd  
DS  
GS  
D
R
0.5  
3.0  
50  
g
t
30  
50  
65  
35  
60  
d(on)  
t
80  
r
V
DD  
= 10 V, R = 10  
L
= 4.5 V, R = 6  
GEN G  
I
^ 1 A, V  
D
Turn-Off Delay Time  
Fall Time  
t
100  
60  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 1.7 A, di/dt = 100 A/ s  
90  
Notes  
a. Pulse test; pulse width v 300 s, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
Document Number: 70715  
S-51451—Rev. C, 01-Aug-05  
www.vishay.com  
2
Si3446DV  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
20  
20  
16  
12  
8
V
GS  
= 5, 4.5, 4, 3.5, 3 V  
16  
12  
8
2.5 V  
2 V  
T
= 125_C  
4
4
C
25_C  
1, 1.5 V  
–55_C  
0
0
0
1
2
3
4
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
1500  
1200  
900  
600  
300  
0
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
C
iss  
V
GS  
= 2.5 V  
V
GS  
= 4.5 V  
C
oss  
C
rss  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
I
D
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 10 V  
V
= 4.5 V  
DS  
= 5.3 A  
GS  
I = 5.3 A  
I
D
0
2
4
6
8
10  
–50 –25  
0
25  
50  
75  
100 125 150  
Q
– Total Gate Charge (nC)  
T – Junction Temperature (_C)  
J
g
Document Number: 70715  
S-51451—Rev. C, 01-Aug-05  
www.vishay.com  
3
Si3446DV  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
20  
I
D
= 5.3 A  
10  
T
= 150_C  
J
T
= 25_C  
J
1
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
0
1
2
3
4
5
V
SD  
– Source-to-Drain Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Threshold Voltage  
Single Pulse Power  
0.4  
0.2  
25  
20  
15  
10  
5
I
D
= 250 A  
–0.0  
–0.2  
–0.4  
–0.6  
0
–50 –25  
0
25  
50  
75  
100 125 150  
0.01  
0.10  
1.00  
10.00  
T
– Temperature (_C)  
Time (sec)  
J
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 62.5_C/W  
thJA  
(t)  
3. T – T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
Document Number: 70715  
S-51451—Rev. C, 01-Aug-05  
www.vishay.com  
4
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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