SI3471CDV-T1-GE3 [VISHAY]

TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal;
SI3471CDV-T1-GE3
型号: SI3471CDV-T1-GE3
厂家: VISHAY    VISHAY
描述:

TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

开关 光电二极管 晶体管
文件: 总7页 (文件大小:113K)
中文:  中文翻译
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Si3471CDV  
Vishay Siliconix  
P-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
- 8  
Definition  
TrenchFET® Power MOSFET  
PWM Optimized  
0.027 at VGS = - 4.5 V  
0.036 at VGS = - 2.5 V  
0.048 at VGS = - 1.8 V  
- 12  
- 8  
20 nC  
Compliant to RoHS Directive 2002/95/EC  
- 7.5  
APPLICATIONS  
Load Switch  
PA Switch  
TSOP-6  
Top View  
(4) S  
1
2
3
6
3 mm  
5
(3) G  
Marking Code  
AQ XXX  
4
Lot Traceability  
and Date Code  
Part # Code  
2.85 mm  
(1, 2, 5, 6) D  
Ordering Information: Si3471CDV-T1-E3 (Lead (Pb)-free)  
Si3471CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
Limit  
- 12  
8
Unit  
V
VGS  
- 8a  
- 8a  
TC = 25 °C  
C = 70 °C  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
- 7.4b, c  
- 5.9b, c  
- 20  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
- 3.2  
- 1.67b, c  
Continuous Source-Drain Diode Current  
T
C = 25 °C  
3.8  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
2.4  
PD  
Maximum Power Dissipation  
W
2.0b, c  
1.3b, c  
TJ, Tstg  
- 55 to 150  
°C  
Operating Junction and Storage Temperature Range  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
Symbol  
Typical  
55  
Maximum  
62.5  
Unit  
RthJA  
t 5 s  
Steady State  
°C/W  
RthJF  
27  
33  
Notes:  
a. Package limited.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 110 °C/W.  
Document Number: 69943  
S09-0660-Rev. B, 20-Apr-09  
www.vishay.com  
1
Si3471CDV  
Vishay Siliconix  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
VDS  
ΔVDS/TJ  
ΔVGS(th)/TJ  
VGS(th)  
VGS = 0 V, ID = - 250 µA  
ID = - 250 µA  
Drain-Source Breakdown Voltage  
- 12  
V
V
DS Temperature Coefficient  
- 11  
3
mV/°C  
VGS(th) Temperature Coefficient  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
VDS = VGS , ID = - 250 µA  
- 0.4  
- 20  
- 1.0  
100  
- 1  
V
IGSS  
VDS = 0 V, VGS  
=
8 V  
nA  
VDS = - 12 V, VGS = 0 V  
DS = - 12 V, VGS = 0 V, TJ = 85 °C  
VDS - 5 V, VGS = - 4.5 V  
VGS = - 4.5 V, ID = - 7.3 A  
VGS = - 2.5 V, ID = - 6.3 A  
VGS = - 1.8 V, ID = - 2.1 A  
VDS = - 6 V, ID = - 7.3 A  
IDSS  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
µA  
A
V
- 10  
ID(on)  
0.021  
0.027  
0.035  
26  
0.027  
0.036  
0.048  
Drain-Source On-State Resistancea  
RDS(on)  
Ω
Forward Transconductancea  
gfs  
S
Dynamicb  
Ciss  
Coss  
Crss  
Input Capacitance  
1600  
450  
400  
32  
V
DS = - 6 V, VGS = 0 V, f = 1 MHz  
Output Capacitance  
pF  
Reverse Transfer Capacitance  
VDS = - 6 V, VGS = - 8 V, ID = - 7.3 A  
50  
30  
Total Gate Charge  
Qg  
20  
nC  
Qgs  
Qgd  
Rg  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
V
DS = - 6 V, VGS = - 4.5 V, ID = - 7.3 A  
f = 1 MHz  
2.7  
5.4  
4.5  
20  
Ω
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Rise Time  
30  
80  
75  
35  
15  
25  
75  
25  
52  
V
DD = - 6 V, RL = 1 Ω  
ID - 5.9 A, VGEN = - 4.5 V, Rg = 1 Ω  
Turn-Off Delay Time  
Fall Time  
50  
22  
ns  
Turn-On Delay Time  
Rise Time  
10  
15  
V
DD = - 6 V, RL = 1 Ω  
ID - 5.9 A, VGEN = - 8 V, Rg = 1 Ω  
Turn-Off Delay Time  
Fall Time  
50  
15  
Drain-Source Body Diode Characteristics  
Continuous Source-Drain Diode Current  
IS  
ISM  
VSD  
trr  
TC = 25 °C  
IS = - 5.9 A  
- 3.2  
- 20  
- 1.2  
60  
A
Pulse Diode Forward Currenta  
Body Diode Voltage  
- 0.8  
40  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Reverse Recovery Fall Time  
Reverse Recovery Rise Time  
ns  
nC  
Qrr  
ta  
20  
30  
IF = - 5.9 A, dI/dt = 100 A/µs, TJ = 25 °C  
23  
ns  
tb  
27  
Notes:  
a. Pulse test; pulse width 300 µs, duty cycle 2 %  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.vishay.com  
2
Document Number: 69943  
S09-0660-Rev. B, 20-Apr-09  
Si3471CDV  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
20  
5
4
3
2
1
0
V
GS  
= 5 V thru 2 V  
15  
10  
5
V
V
= 1.5 V  
GS  
T
C
= 125 °C  
T
C
= 25 °C  
= 1 V  
GS  
T
C
= - 55 °C  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
0.3  
V
0.6  
0.9  
1.2  
1.5  
V
- Drain-to-Source Voltage (V)  
- Gate-to-Source Voltage (V)  
DS  
GS  
Output Characteristics  
Transfer Characteristics  
0.08  
0.06  
0.04  
0.02  
0.00  
2800  
2400  
2000  
1600  
1200  
800  
C
iss  
V
GS  
= 1.8 V  
V
= 2.5 V  
= 4.5 V  
GS  
C
oss  
C
rss  
V
GS  
400  
0
0
5
10  
- Drain Current (A)  
15  
20  
0
3
6
9
12  
I
V
- Drain-to-Source Voltage (V)  
D
DS  
On-Resistance vs. Drain Current and Gate Voltage  
Capacitance  
8
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
I
= 7.3 A  
D
I
= 7.3 A  
D
V
GS  
= 4.5 V, 2.5 V  
V
DS  
= 6 V  
6
4
2
0
V
GS  
= 1.8 V  
V
DS  
= 9.6 V  
0
5
10  
15  
20  
25  
30  
35  
- 50 - 25  
0
25  
50  
75  
100 125 150  
T
J
- Junction Temperature (°C)  
Q
g
- Total Gate Charge (nC)  
On-Resistance vs. Junction Temperature  
Gate Charge  
Document Number: 69943  
S09-0660-Rev. B, 20-Apr-09  
www.vishay.com  
3
Si3471CDV  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
0.08  
0.06  
0.04  
0.02  
0.00  
100  
I
= 7.3 A  
D
T
J
= 150 °C  
10  
T
= 125 °C  
T
J
= 25 °C  
A
T
= 25 °C  
A
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
1
2
3
4
5
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
20  
16  
I
= 250 µA  
D
12  
8
T
A
= 25 °C  
4
0
-2  
-1  
10  
- 50 - 25  
0
25  
50  
75  
100 125 150  
10  
1
10  
100  
600  
T
J
- Temperature (°C)  
Time (s)  
Single Pulse Power  
Threshold Voltage  
100  
Limited by R  
*
DS(on)  
10  
1 ms  
10 ms  
1
100 ms  
1 s, 10 s  
DC  
0.1  
BVDSS  
T
A
= 25 °C  
Single Pulse  
0.01  
0.1  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
* V > minimum V at which R  
is specified  
DS (on)  
GS  
GS  
Safe Operating Area  
www.vishay.com  
4
Document Number: 69943  
S09-0660-Rev. B, 20-Apr-09  
Si3471CDV  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
4
3
2
1
0
12  
10  
8
Package Limited  
6
4
2
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
T
C
- Case Temperature (°C)  
T
C
- Case Temperature (°C)  
Current Derating*  
Power, Junction-to-Foot  
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper  
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package  
limit.  
Document Number: 69943  
S09-0660-Rev. B, 20-Apr-09  
www.vishay.com  
5
Si3471CDV  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
0.1  
P
DM  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 90 °C/W  
thJA  
(t)  
3. TJM - T = P  
Z
A
DM thJA  
Single Pulse  
0.01  
4. Surface Mounted  
-4  
-3  
-2  
10  
-1  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.05  
0.02  
0.1  
Single Pulse  
- 4  
0.01  
- 3  
- 2  
- 1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?69943.  
www.vishay.com  
6
Document Number: 69943  
S09-0660-Rev. B, 20-Apr-09  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Revision: 12-Mar-12  
Document Number: 91000  
1

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