SI3471CDV-T1-GE3 [VISHAY]
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal;型号: | SI3471CDV-T1-GE3 |
厂家: | VISHAY |
描述: | TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:113K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Si3471CDV
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
- 8
Definition
TrenchFET® Power MOSFET
PWM Optimized
0.027 at VGS = - 4.5 V
0.036 at VGS = - 2.5 V
0.048 at VGS = - 1.8 V
•
•
- 12
- 8
20 nC
• Compliant to RoHS Directive 2002/95/EC
- 7.5
APPLICATIONS
•
Load Switch
•
PA Switch
TSOP-6
Top View
(4) S
1
2
3
6
3 mm
5
(3) G
Marking Code
AQ XXX
4
Lot Traceability
and Date Code
Part # Code
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3471CDV-T1-E3 (Lead (Pb)-free)
Si3471CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Limit
- 12
8
Unit
V
VGS
- 8a
- 8a
TC = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 150 °C)
ID
- 7.4b, c
- 5.9b, c
- 20
TA = 25 °C
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
- 3.2
- 1.67b, c
Continuous Source-Drain Diode Current
T
C = 25 °C
3.8
TC = 70 °C
TA = 25 °C
TA = 70 °C
2.4
PD
Maximum Power Dissipation
W
2.0b, c
1.3b, c
TJ, Tstg
- 55 to 150
°C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Symbol
Typical
55
Maximum
62.5
Unit
RthJA
t ≤ 5 s
Steady State
°C/W
RthJF
27
33
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 69943
S09-0660-Rev. B, 20-Apr-09
www.vishay.com
1
Si3471CDV
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 12
V
V
DS Temperature Coefficient
- 11
3
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS , ID = - 250 µA
- 0.4
- 20
- 1.0
100
- 1
V
IGSS
VDS = 0 V, VGS
=
8 V
nA
VDS = - 12 V, VGS = 0 V
DS = - 12 V, VGS = 0 V, TJ = 85 °C
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 7.3 A
VGS = - 2.5 V, ID = - 6.3 A
VGS = - 1.8 V, ID = - 2.1 A
VDS = - 6 V, ID = - 7.3 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
ID(on)
0.021
0.027
0.035
26
0.027
0.036
0.048
Drain-Source On-State Resistancea
RDS(on)
Ω
Forward Transconductancea
gfs
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
1600
450
400
32
V
DS = - 6 V, VGS = 0 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
VDS = - 6 V, VGS = - 8 V, ID = - 7.3 A
50
30
Total Gate Charge
Qg
20
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS = - 6 V, VGS = - 4.5 V, ID = - 7.3 A
f = 1 MHz
2.7
5.4
4.5
20
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
30
80
75
35
15
25
75
25
52
V
DD = - 6 V, RL = 1 Ω
ID ≅ - 5.9 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
50
22
ns
Turn-On Delay Time
Rise Time
10
15
V
DD = - 6 V, RL = 1 Ω
ID ≅ - 5.9 A, VGEN = - 8 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
50
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = - 5.9 A
- 3.2
- 20
- 1.2
60
A
Pulse Diode Forward Currenta
Body Diode Voltage
- 0.8
40
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
20
30
IF = - 5.9 A, dI/dt = 100 A/µs, TJ = 25 °C
23
ns
tb
27
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69943
S09-0660-Rev. B, 20-Apr-09
Si3471CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
4
3
2
1
0
V
GS
= 5 V thru 2 V
15
10
5
V
V
= 1.5 V
GS
T
C
= 125 °C
T
C
= 25 °C
= 1 V
GS
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.3
V
0.6
0.9
1.2
1.5
V
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
0.08
0.06
0.04
0.02
0.00
2800
2400
2000
1600
1200
800
C
iss
V
GS
= 1.8 V
V
= 2.5 V
= 4.5 V
GS
C
oss
C
rss
V
GS
400
0
0
5
10
- Drain Current (A)
15
20
0
3
6
9
12
I
V
- Drain-to-Source Voltage (V)
D
DS
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
= 7.3 A
D
I
= 7.3 A
D
V
GS
= 4.5 V, 2.5 V
V
DS
= 6 V
6
4
2
0
V
GS
= 1.8 V
V
DS
= 9.6 V
0
5
10
15
20
25
30
35
- 50 - 25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 69943
S09-0660-Rev. B, 20-Apr-09
www.vishay.com
3
Si3471CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.08
0.06
0.04
0.02
0.00
100
I
= 7.3 A
D
T
J
= 150 °C
10
T
= 125 °C
T
J
= 25 °C
A
T
= 25 °C
A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.7
0.6
0.5
0.4
0.3
0.2
20
16
I
= 250 µA
D
12
8
T
A
= 25 °C
4
0
-2
-1
10
- 50 - 25
0
25
50
75
100 125 150
10
1
10
100
600
T
J
- Temperature (°C)
Time (s)
Single Pulse Power
Threshold Voltage
100
Limited by R
*
DS(on)
10
1 ms
10 ms
1
100 ms
1 s, 10 s
DC
0.1
BVDSS
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R
is specified
DS (on)
GS
GS
Safe Operating Area
www.vishay.com
4
Document Number: 69943
S09-0660-Rev. B, 20-Apr-09
Si3471CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
3
2
1
0
12
10
8
Package Limited
6
4
2
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power, Junction-to-Foot
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69943
S09-0660-Rev. B, 20-Apr-09
www.vishay.com
5
Si3471CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 90 °C/W
thJA
(t)
3. TJM - T = P
Z
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
10
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
- 4
0.01
- 3
- 2
- 1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69943.
www.vishay.com
6
Document Number: 69943
S09-0660-Rev. B, 20-Apr-09
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
相关型号:
SI3471DV-E3
TRANSISTOR 5100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal
VISHAY
SI3471DV-T1-GE3
Small Signal Field-Effect Transistor, 5.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
VISHAY
SI3473CDV-T1-GE3
TRANSISTOR 8000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明