SI3471DV-E3 [VISHAY]
TRANSISTOR 5100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal;
| 型号： | SI3471DV-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 5100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3471DV
Vishay Siliconix
New Product
P-Channel 12-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET: 1.8-V Rated
VDS (V)
rDS(on) (Ω)
ID (A)
- 6.8
- 6.0
- 5.2
Pb-free
Available
0.031 at VGS = - 4.5 V
0.040 at VGS = - 2.5 V
0.053 at VGS = - 1.8 V
APPLICATIONS
RoHS*
- 12
•
Load Switch
COMPLIANT
•
PA Switch
TSOP-6
Top View
(4) S
1
2
3
6
5
(3) G
3 mm
4
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3471DV-T1
Si3471DV-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
5 sec
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 12
8
V
VGS
TA = 25 °C
TA = 85 °C
- 6.8
- 4.9
- 5.1
- 3.7
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current
- 20
Continuous Diode Current (Diode Conduction)a
- 1.7
2.0
- 0.9
1.1
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 85 °C
1.0
0.6
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
55
Maximum
62.5
Unit
t ≤ 5 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
Steady State
Steady State
90
110
°C/W
RthJF
30
36
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72104
S-60422-Rev. B, 20-Mar-06
www.vishay.com
1
Si3471DV
Vishay Siliconix
New Product
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
- 0.40
- 1
V
VDS = 0 V, VGS
=
8 V
Gate-Body Leakage
100
- 1
nA
VDS = - 12 V, VGS = 0 V
DS = - 12 V, VGS = 0 V, TJ = 85 °C
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 6.8 A
IDSS
Zero Gate Voltage Drain Current
µA
A
V
- 5
On-State Drain Currenta
ID(on)
- 20
0.025
0.032
0.041
20
0.031
0.040
0.053
Drain-Source On-State Resistancea
rDS(on)
V
V
GS = - 2.5 V, ID = - 6 A
GS = - 1.8 V, ID = - 3 A
Ω
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 5 V, ID = - 6.8 A
IS = - 1.7 A, VGS = 0 V
S
V
VSD
- 0.7
- 1.2
33
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
18
2.3
4.6
21
V
DS = - 6 V, VGS = - 4.5 V, ID = - 6.8 A
nC
ns
33
75
50
V
DD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
125
110
50
190
165
80
trr
IF = - 1.7 A, di/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C unless noted
20
16
12
8
20
16
12
8
V
GS
= 5 thru 2 V
1.5 V
T
= 125 °C
C
4
4
25 °C
1 V
- 55 °C
0
0
0
1
2
3
4
5
0.0
0.5
GS
1.0
1.5
2.0
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
Output Characteristics
Transfer Characteristics
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Document Number: 72104
S-60422-Rev. B, 20-Mar-06
Si3471DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
0.10
0.08
0.06
0.04
0.02
0.00
2500
2000
1500
1000
500
C
iss
V
GS
= 1.8 V
V
= 2.5 V
GS
C
oss
C
rss
V
GS
= 4.5 V
0
0
4
8
12
16
20
0
3
6
9
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.4
1.3
1.2
1.1
1.0
0.9
0.8
5
4
3
2
1
0
V
I
= 4.5 V
V
I
= 6 V
GS
DS
= 6.8 A
= 6.8 A
D
D
- 50 - 25
0
25
50
75
100 125 150
0
5
10
15
20
T
- Junction Temperature (°C)
Q
- Total Gate Charge (nC)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
0.10
0.08
0.06
0.04
0.02
0.00
20
10
I
D
= 6.8 A
T
= 150 °C
J
I
D
= 3 A
T
= 25 °C
J
1
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72104
S-60422-Rev. B, 20-Mar-06
www.vishay.com
3
Si3471DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
0.4
40
32
0.3
I
D
= 250 µA
0.2
0.1
24
16
T
A
= 25 °C
0.0
8
0
- 0.1
- 0.2
-2
-1
- 50 - 25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
- Temperature (°C)
Time (sec)
J
Threshold Voltage
Single Pulse Power
1000
r
Limited
DS(on)
I
Limited
DM
100
10
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
1
T
= 25 °C
C
dc
Single Pulse
BV
DSS
Limited
0.1
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which r is specified
GS
GS
DS(on)
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90 °C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72104
S-60422-Rev. B, 20-Mar-06
Si3471DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72104.
Document Number: 72104
S-60422-Rev. B, 20-Mar-06
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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