SI4413ADY_RC [VISHAY]
R-C Thermal Model Parameters; R- C热模型参数
| 型号： | SI4413ADY_RC |
| 厂家： | 
VISHAY |
| 描述： | R-C Thermal Model Parameters |
| 文件： | 总3页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4413ADY_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Foot
Junction to
RT1
Ambient
6.1480
Case
N/A
N/A
N/A
N/A
1.1236
4.4461
9.9726
5.3859
RT2
24.4080
26.0454
27.2274
RT3
RT4
Thermal Capacitance (Joules/°C)
Foot
Junction to
CT1
Ambient
22.0422 m
56.2436 m
3.5677
Case
N/A
N/A
N/A
N/A
9.0587 m
CT2
129.7015 m
138.7031 m
11.4484 m
CT3
CT4
2.3495
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 74307
Revision: 07-May-07
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1
Si4413ADY_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Foot
Junction to
RF1
Ambient
2.4210
Case
N/A
N/A
N/A
N/A
4.4473
5.1144
6.7581
4.6120
RF2
16.7080
13.7271
51.0530
RF3
RF4
Thermal Capacitance (Joules/°C)
Junction to
Ambient
2.9174 m
28.3980 m
39.1252 m
1.4468
Case
N/A
N/A
N/A
N/A
Foot
CF1
5.1291 m
11.2562 m
82.6299 m
16.4486 m
CF2
CF3
CF4
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
www.vishay.com
2
Document Number: 74307
Revision: 07-May-07
Si4413ADY_RC
Vishay Siliconix
Document Number: 74307
Revision: 07-May-07
www.vishay.com
3
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