SI4465DY [VISHAY]
P-Channel 1.8-V (G-S) MOSFET; P沟道1.8 -V (G -S )的MOSFET型号: | SI4465DY |
厂家: | VISHAY |
描述: | P-Channel 1.8-V (G-S) MOSFET |
文件: | 总4页 (文件大小:62K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Si4465DY
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.009 @ V = -4.5 V
-14
-12
-10
GS
0.011 @ V = -2.5 V
GS
-8
0.016 @ V = -1.8 V
GS
S
S S
SO-8
S
D
D
D
D
1
2
3
4
8
7
6
5
G
S
S
G
Top View
D
D
D D
Ordering Information: Si4465DY
Si4465DY-T1 (with Tape and Reel)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
-8
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
"8
T
= 25_C
= 70_C
-14
-11
A
a, b
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
-40
DM
a, b
Continuous Source Current (Diode Conduction)
I
S
-2.1
T
= 25_C
= 70_C
2.5
A
a, b
Maximum Power Dissipation
P
W
D
T
A
1.6
Operating Junction and Storage Temperature Range
T , T
J
-55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
50
a
Maximum Junction-to-Ambient
R
thJA
C/W
Steady State
80
Notes
a. Surface Mounted on FR4 Board.
b. t v10 sec.
Document Number: 70830
S-31989—Rev. B, 13-Oct-03
www.vishay.com
1
Si4465DY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -250 mA
-0.45
V
GS(th)
DS
GS
D
V
= 0 V, V = "8 V
GS
I
"100
nA
DS
GSS
V
= -8 V, V = 0 V
-1
-5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= -8 V, V = 0 V, T = 55_C
DS
DS
GS
J
a
On-State Drain Current
I
V
w -5 V, V = -4.5 V
-20
A
D(on)
GS
V
= -4.5 V, I = -14 A
0.007
0.009
0.009
0.011
GS
GS
GS
D
a
V
V
= -2.5 V, I = -12 A
D
Drain-Source On-State Resistance
r
W
DS(on)
0.012
0.016
= -1.8 V, I = -10 A
D
a
Forward Transconductance
g
V
= -10 V, I = -14 A
60
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= -2.1 A, V = 0 V
0.7
-1.2
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
80
15
9
120
g
Q
Q
V
= -4 V, V = -4.5 V, I = -14 A
nC
ns
gs
gd
DS
GS
D
t
45
55
380
190
80
90
d(on)
t
r
110
760
380
120
V
= -4 V, R = 4 W
L
GEN G
DD
I
D
^ -1 A, V
= -4.5 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
Notes
t
rr
I = -2.1 A, di/dt = 100 A/ms
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70830
S-31989—Rev. B, 13-Oct-03
www.vishay.com
2
Si4465DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
32
24
16
8
V
= 5 thru 2 V
GS
32
24
16
8
1.5 V
T
= 125_C
C
25_C
1 V
-55_C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
14000
12000
10000
8000
6000
4000
2000
0
0.04
0.03
0.02
0.01
0.00
C
iss
V
GS
= 1.8 V
V
V
= 2.5 V
= 4.5 V
GS
C
oss
GS
C
rss
0
8
16
24
32
40
0
2
4
6
8
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
V
D
= 4 V
V
GS
= 4.5 V
DS
I
= 14 A
I = 14 A
D
0
20
Q
40
60
80
-50
-25
0
25
50
75
100 125 150
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Document Number: 70830
S-31989—Rev. B, 13-Oct-03
www.vishay.com
3
Si4465DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.04
0.03
0.02
0.01
0.00
50
T
= 150_C
J
10
T
= 25_C
J
I
D
= 14 A
1
0.00
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
0.3
50
40
I
D
= 250 mA
0.2
30
20
10
0.1
0.0
-0.1
-0.2
0
-50
-25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
t
1
0.05
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 80_C/W
thJA
(t)
0.02
3. T
- T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 70830
S-31989—Rev. B, 13-Oct-03
www.vishay.com
4
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