SI4826DY-E3 [VISHAY]
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8;
| 型号： | SI4826DY-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4826DY
Vishay Siliconix
Asymmetrical Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
VDS (V)
rDS(on) (W)
ID (A)
D 100% Rg Tested
0.022 @ V = 10 V
6.3
5.4
9.5
8.2
GS
Channel-1
Channel-2
0.030 @ V = 4.5 V
GS
30
0.0155 @ V = 10 V
GS
0.0205 @ V = 4.5 V
GS
D
1
D
2
D
2
D
2
SO-8
S
1
D
1
D
2
D
2
D
2
1
2
3
4
8
7
6
5
G
1
S
2
G
G
2
1
G
2
Top View
S
1
S
2
Ordering Information: Si4826DY
Si4826DY-T1 (with Tape and Reel)
N-Channel 1
MOSFET
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Channel 1
Channel 2
10 secs
Steady State 10 secs
Steady State
Parameter
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
20
DS
V
V
GS
T
= 25_C
= 70_C
6.3
5.4
5.3
4.2
9.5
7.6
7.0
5.6
A
Continuous Drain Current (T
=
J
I
D
NO TAG
150_C)
Pulsed Drain Current
T
A
A
I
30
40
DM
NO TAG
Continuous Source Current (Diode Conduction)
I
1.3
1.4
0.9
0.9
1.0
2.2
2.4
1.5
1.15
S
T
= 25_C
1.25
A
NO TAG
Maximum Power Dissipation
P
W
D
T
A
= 70_C
0.64
0.80
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Channel 1
Max
Channel 2
Typ
Typ
Max
Parameter
Symbol
Unit
t v 10 sec
Steady-State
72
100
51
90
125
63
43
82
25
53
100
30
NO TAG
Maximum Junction-to-Ambient
R
thJA
thJC
_C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
www.vishay.com
1
Si4826DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED).
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
0.8
1.0
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
V
GS(th)
DS
GS
D
100
100
1
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
= 24 V, V = 0 V
GS
DS
1
Zero Gate Voltage Drain Current
I
mA
A
DSS
D(on)
15
15
V
DS
= 24 V, V = 0 V, T = 85_C
GS
J
20
30
a
On-State Drain Current
I
V
= 5 V, V = 10 V
GS
DS
GS
V
= 10 V, I = 6.3 A
D
0.018
0.0125
0.024
0.0165
17
0.022
0.0155
0.030
V
= 10 V, I = 9.5 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
V
= 4.5 V, I = 5.4 A
D
GS
GS
= 4.5 V, I = 8.2 A
D
0.0205
V
= 15 V, I = 6.3 A
D
DS
a
Forward Transconductance
g
fs
S
V
V
= 15 V, I = 9.5 A
D
28
DS
I
I
= 1.3 A, V = 0 V
GS
0.7
1.1
1.1
S
S
a
Diode Forward Voltage
V
SD
= 2.2 A, V = 0 V
GS
0.75
Dynamicb
8.0
15
12
23
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Total Gate Charge
Q
g
Channel-1
V
= 15 V, V = 5 V, I = 6.3 A
1.75
5.3
3.2
4.6
DS
GS D
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
Q
nC
gs
gd
Channel-2
V
DS
= 15 V, V = 5 V, I = -9.5 A
GS D
1.5
0.5
5.1
2.6
20
30
10
10
50
80
16
24
60
70
R
g
W
10
15
5
t
d(on)
Channel-1
V
= 15 V, R = 15 W
DD
L
t
r
I
D
^ 1 A, V = 10 V, R = 6 W
GEN G
5
26
44
8
Channel-2
= 15 V, R = 15 W
Turn-Off Delay Time
Fall Time
t
ns
d(off)
V
DD
L
I
D
^ 1 A, V
= 10 V, R = 6 W
GEN G
t
f
12
30
32
I
= 1.3 A, di/dt = 100 A/ms
= 2.2 A, di/dt = 100 mA/ms
F
Source-Drain Reverse Recovery Time
Notes
t
rr
I
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
www.vishay.com
2
Si4826DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 1
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
V
GS
= 10 thru 4 V
24
18
12
6
3 V
T
= 125_C
C
25_C
1 V
-55_C
2 V
0
0
0
2
4
6
8
10
0.0
0.5
1.0
GS
1.5
2.0
2.5
3.0
3.5
4.0
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
On-Resistancevs. Drain Current
Capacitance
1000
800
600
400
200
0
0.05
0.04
0.03
0.02
0.01
0.00
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
6
rss
0
12
18
24
30
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
I
= 15 V
= 6.3 A
V
= 10 V
GS
= 6.3 A
DS
D
I
D
6
4
2
0
0
3
6
9
12
15
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
www.vishay.com
3
Si4826DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 1
Source-Drain Diode Forward Voltage
On-Resistancevs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
40
T
= 150_C
J
10
T
= 25_C
J
I
= 6.3 A
D
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
- Gate-to-Source Voltage (V)
GS
8
10
V
- Source-to-Drain Voltage (V)
V
SD
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
0.4
100
80
I
D
= 250 mA
0.2
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
60
40
20
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (_C)
J
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
www.vishay.com
4
Si4826DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 1
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
Output Characteristics
Transfer Characteristics
40
40
32
24
16
8
V
GS
= 10 thru 4 V
32
24
16
8
T
= 125_C
C
25_C
3 V
-55_C
2 V
8
0
0
0
2
4
6
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.030
0.024
0.018
0.012
0.006
0.000
2500
2000
1500
1000
500
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
8
16
24
32
40
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
www.vishay.com
5
Si4826DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
Gate Charge
On-Resistance vs. Junction Temperature
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 15 V
= 9.5 A
V
GS
= 10 V
DS
I
D
I = 9.5 A
D
8
6
4
2
0
0
6
12
18
24
30
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistancevs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0.00
40
10
T
= 150_C
J
T
= 25_C
J
I
D
= 9.5 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
100
80
0.4
0.2
I
D
= 250 mA
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
60
40
20
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (_C)
J
Time (sec)
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
www.vishay.com
6
Si4826DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
t
1
0.05
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 82_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
www.vishay.com
7
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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