SI4886DY [VISHAY]
N-Channel Reduced Qg, Fast Switching MOSFET; N沟道减少的Qg ，快速开关MOSFET
| 型号： | SI4886DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel Reduced Qg, Fast Switching MOSFET |
| 文件： | 总4页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4886DY
Vishay Siliconix
New Product
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.010 @ V = 10 V
13
11
GS
30
0.0135 @ V = 4.5 V
GS
D
D
D D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
N-Channel MOSFET
Top View
S
S
S
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
13
9.5
7.6
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
10.5
A
Pulsed Drain Current
I
"50
DM
a
Continuous Source Current (Diode Conduction)
I
2.60
2.95
1.90
1.40
1.56
1.0
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
35
68
18
42
80
23
a
Maximum Junction-to-Ambient (MOSFET)
R
thJA
thJF
C/W
Maximum Junction-to-Foot (Drain)
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71142
S-00206—Rev. A, 21-Feb-00
www.vishay.com S FaxBack 408-970-5600
2-1
Si4886DY
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T= _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.80
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= 24 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 24 V, V = 0 V, T = 70_C
GS
J
a
On-State Drain Current
I
40
A
V
DS
w 5 V, V = 10 V
GS
D(on)
0.0078
0.010
V
GS
= 10 V, I = 13 A
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 11 A
0.0105
38
0.0135
GS
D
a
Forward Transconductance
g
V
DS
= 15 V, I = 13 A
S
V
fs
D
a
Diode Forward Voltage
V
SD
I
= 2.6 A, V = 0 V
0.74
1.1
20
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
14.5
3.2
4.3
14
5
g
Q
gs
Q
gd
V
= 15 V, V = 5.0 V, I = 13 A
nC
ns
DS
GS
D
t
20
10
80
30
70
d(on)
t
r
V
= 15 V, R = 15 W
L
DD
I
^ 1 A, V
= 10 V, R = 6 W
GEN G
D
Turn-Off Delay Time
Fall Time
t
42
18
40
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 2.6 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 4 V
40
30
20
10
0
T
C
= 125_C
3 V
1 V
25_C
–55_C
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71142
S-00206—Rev. A, 21-Feb-00
www.vishay.com S FaxBack 408-970-5600
2-2
Si4886DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.020
0.015
0.010
0.005
0
2500
2000
1500
1000
500
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 15 V
= 13 A
V
GS
= 10 V
DS
I
D
I = 13 A
D
6
4
2
0
0
5
10
15
20
25
30
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0
50
10
T = 150_C
J
T = 25_C
J
I
D
= 13 A
1
0.00
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71142
S-00206—Rev. A, 21-Feb-00
www.vishay.com S FaxBack 408-970-5600
2-3
Si4886DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Single Pulse Power
Threshold Voltage
0.4
60
50
I
D
= 250 mA
0.2
40
30
20
10
–0.0
–0.2
–0.4
–0.6
–0.8
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
Time (sec)
T – Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 68_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71142
S-00206—Rev. A, 21-Feb-00
www.vishay.com S FaxBack 408-970-5600
2-4
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