SI4955DY-T1-E3 [VISHAY]
Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs; 不对称双P通道30伏/ 20 -V（ DS）中的MOSFET
| 型号： | SI4955DY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs |
| 文件： | 总9页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4955DY
Vishay Siliconix
New Product
Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFETs
VDS (V)
rDS(on) (Ω)
ID (A)
- 5.0
- 3.7
- 7.0
- 6.2
- 5.2
•
Low Gate Drive (2.5 V) Capability For
Channel 2
0.054 at VGS = - 10 V
0.100 at VGS = - 4.5 V
0.027 at VGS = - 4.5 V
0.035 at VGS = - 2.5 V
0.048 at VGS = - 1.8 V
Channel-1
Channel-2
- 30
- 20
RoHS
COMPLIANT
APPLICATIONS
•
Game Station
- Load Switch
S
1
S
2
SO-8
S
1
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
G
2
G
1
G
1
S
2
G
2
Top View
D
1
D
2
Ordering Information:
Si4955DY-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Channel-1
Channel-2
10 sec Steady State
Parameter
Symbol
Unit
10 sec
Steady State
- 30
20
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
- 20
8
V
TA = 25 °C
TA = 70 °C
- 5.0
- 4.0
- 3.8
- 3.0
- 7.0
- 5.6
- 5.3
- 4.2
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current
- 20
Continuous Source Current (Diode Conduction)a
TA = 25 °C
TA = 70 °C
- 1.7
2.0
- 0.9
1.1
- 1.7
2
- 0.9
1.1
Maximum Power Dissipationa
PD
W
1.3
0.7
1.3
0.7
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Channel-1
Max
Channel-2
Max
Parameter
Symbol
Unit
Typ
55
Typ
58
t ≤ 10 sec
62.5
110
40
62.5
110
40
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
RthJF
Steady State
Steady State
90
91
°C/W
33
34
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
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1
Si4955DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VDS = VGS, ID = - 250 µA
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
- 1.0
- 0.4
- 3
VGS(th)
Gate Threshold Voltage
Gate-Body Leakage
V
V
DS = VGS, ID = - 250 µA
- 1
VDS = 0 V, VGS
DS = 0 V, VGS
=
20 V
8 V
100
100
- 1
IGSS
nA
V
=
VDS = - 30 V, VGS = 0 V
DS = - 20 V, VGS = 0 V
V
- 1
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
V
DS = - 30 V, VGS = 0 V, TJ = 85 °C
DS = - 20 V, VGS = 0 V, TJ = 85 °C
VDS ≥ - 5 V, VGS = - 10 V
- 5
- 5
- 20
- 20
ID(on)
VDS ≤ - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 5.0 A
0.044
0.022
0.082
0.029
0.039
10
0.054
0.027
0.100
0.035
0.048
VGS = - 4.5 V, ID = - 7.0 A
VGS = - 4.5 V, ID = - 3.7 A
VGS = - 2.5 V, ID = - 6.2 A
Drain-Source On-State Resistancea
rDS(on)
Ω
V
GS = - 1.8 V, ID = - 3 A
VDS = - 15 V, ID = - 5.0 A
DS = - 15 V, ID = - 3 A
Forward Transconductancea
Diode Forward Voltagea
gfs
S
V
V
25
IS = - 1.7 A, VGS = 0 V
IS = - 1.7 A, VGS = 0 V
- 0.80
- 0.80
- 1.2
- 1.2
VSD
Dynamicb
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
12.5
21
19
25
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Channel-1
DS = - 15 V, VGS = - 10 V, ID = - 5.0 A
V
V
2.1
2.6
3.5
6.0
7
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
nC
Channel-2
DS = - 10 V, VGS = - 4.5 V, ID = - 7 A
15
30
Channel-1
DD = - 15 V, RL = - 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω
20
V
10
15
40
60
30
45
Channel-2
DD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
ns
125
22
190
35
V
85
130
60
IF = - 1.7 A, di/dt = 100 A/µs
IF = - 1.7 A, di/dt = 100 A/µs
25
trr
Source-Drain Reverse Recovery Time
Ch-2
64
90
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72241
S-61006-Rev. C, 12-Jun-06
Si4955DY
Vishay Siliconix
CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C unless noted
20
16
12
8
20
16
12
8
V
GS
= 10 thru 5 V
4 V
3 V
T
2
= 125 °C
C
4
4
25 °C
- 55 °C
4
0
0
0
1
2
3
Drain-to-Source Voltage (V)
Output Characteristics
4
5
6
0
1
3
5
V
DS
-
V
GS
-
Gate-to-Source Voltage (V)
Transfer Characteristics
0.20
0.16
0.12
0.08
0.04
0.00
1000
800
600
400
200
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
-
Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
I
= 15 V
V
I
= 10 V
DS
GS
= 5.0 V
= 5.0 V
D
D
6
4
2
0
0
2
4
6
8
10
12
14
- 50 - 25
0
25
50
75
100 125 150
Q
-
Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
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3
Si4955DY
Vishay Siliconix
CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C unless noted
0.20
30
T
= 150 °C
J
0.16
0.12
0.08
0.04
0.00
I
D
= 2 A
10
I = 5 A
D
T
= 25 °C
J
1
0.0
0
2
4
6
8
10
0.2
0.4
-
0.6
0.8
1.0
1.2
1.4
V
GS
- Gate-to-Source Voltage (V)
V
Source-to-Drain Voltage (V)
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.6
0.4
30
25
20
I
D
= 250 µA
0.2
15
10
0.0
- 0.2
- 0.4
5
0
- 50 - 25
0
25
50
75
100 125 150
-3
-2
10
-1
10
10
1
10
100
600
Time (sec)
Single Pulse Power
T
- Temperature (°C)
J
Threshold Voltage
100
I
Limited
DM
r
Limited
DS(on)
P(t) = 0.0001
10
P(t) = 0.001
P(t) = 0.01
I
1
D(on)
Limited
P(t) = 0.1
P(t) = 1
0.1
T
A
= 25 °C
P(t) = 10
Single Pulse
dc
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
-
Drain-to-Source Voltage (V)
Safe Operating Area
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Document Number: 72241
S-61006-Rev. C, 12-Jun-06
Si4955DY
Vishay Siliconix
CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 90 °C/W
thJA
(t)
3. TJM - T = P
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
10
-3
10
-2
10
-1
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
- 4
10
-3
10
-2
10
-1
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
www.vishay.com
5
Si4955DY
Vishay Siliconix
CHANNEL 2 TYPICAL CHARACTERISTICS 25 °C unless noted
20
16
12
8
20
16
12
8
V
GS
= 5 thru 2 V
1.5 V
T
= 125 °C
C
4
4
25 °C
- 55 °C
1.6
1 V
0
0
0.0
0
1
2
3
4
5
0.4
0.8
1.2
2.0
V
DS
-
Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
3000
2500
2000
1500
1000
500
0.10
0.08
0.06
0.04
0.02
0.00
C
iss
V
GS
= 1.8 V
V
V
= 2.5 V
GS
C
oss
= 4.5 V
16
GS
C
rss
0
0
4
8
12
16
20
0
4
8
12
20
V
DS
-
Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
V
D
= 4.5 V
V
I
= 10 V
GS
= 7 A
DS
I
= 7 A
D
- 50 - 25
0
25
50
75
100 125 150
0
4
8
12
16
20
24
T - Junction Temperature (°C)
J
Q
-
Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 72241
S-61006-Rev. C, 12-Jun-06
Si4955DY
Vishay Siliconix
CHANNEL 2 TYPICAL CHARACTERISTICS 25 °C unless noted
0.10
20
0.08
10
I
D
= 7 A
0.06
T
= 150 °C
J
0.04
0.02
0.00
T
= 25 °C
J
1
0.0
0.2
0.4
Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
-
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
0.3
30
25
20
I
D
= 250 µA
0.2
0.1
15
10
0.0
- 0.1
- 0.2
5
0
-3
-2
10
-1
10
- 50 - 25
0
25
50
75
100 125 150
10
1
10
100
600
T
- Temperature (°C)
Time (sec)
Single Pulse Power
J
Threshold Voltage
100
I
Limited
DM
r
Limited
DS(on)
P(t) = 0.0001
P(t) = 0.001
10
I
1
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
P(t) = 10
dc
T
= 25 °C
A
Single Pulse
BV
DSS
Limited
10
0.01
0.1
1
100
V
DS
-
Drain-to-Source Voltage (V)
Safe Operating Area
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
www.vishay.com
7
Si4955DY
Vishay Siliconix
CHANNEL 2 TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 91 °C/W
thJA
(t)
3. TJM - T = P
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
10
-3
10
-2
10
-1
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
10
-3
10
-2
10
-1
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72241.
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Document Number: 72241
S-61006-Rev. C, 12-Jun-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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