SI5509DC [VISHAY]
N- and P-Channel 20-V (D-S) MOSFET; N和P通道20 - V（D -S）的MOSFET
| 型号： | SI5509DC |
| 厂家： | 
VISHAY |
| 描述： | N- and P-Channel 20-V (D-S) MOSFET |
| 文件： | 总12页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si5509DC
Vishay Siliconix
New Product
N- and P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETs
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
6.1
Qg (Typ)
a
0.052 at V = 4.5 V
GS
N-Channel
P-Channel
20
3.9 nc
a
0.084 at V = 2.5 V
4.8
GS
RoHS
D Complementary MOSFET for Portable
a
0.090 at V = –4.5 V
–4.8
GS
COMPLIANT
Devices
–20
3.8 nc
a
0.160 at V = –2.5 V
GS
–3.6
– Ideal for Buck–Boost Circuits
1206-8 ChipFETr
1
D
1
S
2
S
1
D
1
G
1
G
2
D
1
S
2
G
1
D
2
G
2
Marking Code
D
2
ED
XXX
Lot Traceability
and Date Code
S
1
D
2
Bottom View
Ordering Information: Si5509DC-T1–E3 (Lead (Pb)–Free)
Part # Code
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 _C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
–20
DS
GS
V
V
"12
a
a
T
T
= 25 _C
= 70 _C
= 25 _C
= 70 _C
6.1
–4.8
C
C
a
a
4.9
–3.8
Continuous Drain Current (T = 150 _C)
I
J
D
b, c
5.0
b, c
3.9
b, c
T
–3.9
A
b, c
T
–3.1
A
A
Pulsed Drain Current
I
10
–15
DM
T
= 25 _C
= 25 _C
3.7
b, c
1.7
–3.7
C
Source-Drain Current Diode Current
I
S
b, c
T
–1.7
A
T = 25 _C
4.5
4.5
C
T = 70 _C
2.88
b, c
2.1
2.88
b, c
2.1
C
Maximum Power Dissipation
P
D
W
T
= 25 _C
= 70 _C
A
b, c
b, c
T
1.33
1.33
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
260
J
stg
_C
d, e
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
b, f
Maximum Junction-to-Ambient
t v 5 sec
Steady-State
R
50
60
50
60
thJA
C/W
Maximum Junction-to-Foot (Drain)
Notes
R
thJF
30
40
30
40
a. Based on T = 25 _C.
C
b. Surface Mounted on 1” x 1” FR4 Board.
c. t = 5 sec
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f.
Maximum under steady state conditions is 90 _C/W for both channels.
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
1
Si5509DC
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25 _C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
GS
= 0 V, I = 250 mA
D
N-Ch
20
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I = –250 mA
D
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–20
I
= 250 mA
= –250 mA
= 250 mA
= –250 mA
18.4
–15.1
–3.4
2.2
D
mV/_C
V
V
Temperature Coefficient
DV /T
DS J
DS
I
D
I
D
Temperature Coefficient
DV
/T
GS(th)
GS(th) J
I
D
V
= V , I = 250 mA
0.7
2
–2
DS
GS
D
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Gate Threshold Voltage
Gate-Body Leakage
V
V
GS(th)
V
DS
= V , I = –250 mA
–0.7
GS
D
100
–100
1
V
DS
= 0 V, V = "12 V
GS
I
nA
GSS
V
= 20 V, V = 0 V
GS
DS
V
DS
= –20 V, V = 0 V
GS
–1
Zero Gate Voltage Drain Current
I
mA
A
DSS
V
= 20 V, V = 0 V, T = 55 _C
10
DS
GS
J
V
DS
= –20 V, V = 0 V, T = 55 _C
–10
GS
J
V
DS
v 5 V, V = 4.5 V
10
GS
N-Ch
P-Ch
b
On-State Drain Current
I
D(on)
V
DS
v –5 V, V = –4.5 V
–15
GS
V
= 4.5 V, I = 5.0 A
0.043
0.074
0.068
0.128
10.4
0.052
0.090
0.084
0.160
GS
D
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
V
= –4.5 V, I = –3.9 A
D
GS
b
Drain-Source On-State Resistance
r
W
S
DS(on)
V
GS
= 2.5 V, I = 3.9 A
D
V
= –2.5 V, I = –2.9 A
D
GS
V
= 10 V, I = 5.0 A
D
DS
b
Forward Transconductance
g
fs
V
DS
= –10 V, I = –3.9 A
D
8.2
Dynamica
N-Ch
P-CH
455
300
85
Input Capacitance
C
iss
N-Channel
GS
V
DS
= 10 V, V = 0 V, f = 1 MHz
N-Ch
P-Ch
Output Capacitance
C
oss
pF
95
P-Channel
V
= –10 V, V = 0 V, f = 1 MHz
DS
GS
50
N-Ch
P-Ch
N-Ch
P-Ch
Reverse Transfer Capacitance
C
rss
65
V
= 10 V, V = 5 V, I = 4.0 A
4.4
4.1
3.8
3.9
0.9
0.7
0.95
1.25
1.9
8
6.6
6.2
5.7
5.9
DS
GS
D
V
= –10 V, V = –5 V, I = –3.9 A
GS D
DS
Total Gate Charge
Q
g
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
nC
V
DS
= 10 V, V = 4.5 V, I = 4.0 A
GS D
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
Q
gs
gd
P-Channel
V
= –10 V, V = –4.5 V, I = –3.9 A
DS
GS D
R
f = 1 MHz
W
g
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
2
Si5509DC
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25 _C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Dynamica
6
9
12
143
113
18
38
9
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Turn-On Delay Time
t
d(on)
8
N-Channel
95
75
12
25
6
V
= 10 V, R =2.5 W
DD
L
Rise Time
t
r
I
^ 4.0 A, V = 4.5 V, R = 1 W
GEN g
D
ns
P-Channel
= –10 V, R = 3.2 W
Turn-Off Delay Time
Fall Time
t
d(off)
V
DD
L
I
^ –3.14 A, V = –4.5 V, R = 1 W
GEN g
D
t
f
60
90
Drain-Source Body Diode Characteristics
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
3.75
–3.75
10
T
= 25 _C
C
Continuous Source-Drain Diode Current
I
S
A
a
Pulse Diode Forward Current
I
SM
–15
1.2
–1.2
18
I
= 2.4 A, V = 0 V
GS
0.8
–0.8
12
18
5
S
Body Diode Voltage
V
SD
V
I
= –1.5 A, V = 0 V
GS
S
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
t
rr
ns
nC
27
8
N-Channel
= 2.4 A, di/dt = 100 A/ms, T = 25 _C
P-Channel
= –1.5 A, di/dt = –100 A/ms, T = 25 _C
Q
rr
I
8
12
F
J
7.5
14
4.5
4
t
a
I
F
J
ns
Reverse Recovery Rise Time
Notes
t
b
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
3
Si5509DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
NĆCHANNEL
Output Characteristics
Transfer Characteristics
15
5
4
3
2
1
0
V
GS
= 5 V thru 3.5 V
12
9
V
GS
= 3 V
V
GS
= 2.5 V
6
T
= 125 _C
C
3
V
= 2 V
GS
T
= 25 _C
C
V
GS
= 1.5 V
T
= –55 _C
C
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
600
500
400
300
200
100
0
0.20
C
iss
0.15
0.10
0.05
0.00
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
3
6
9
12
15
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 4.5 V
GS
= 5 A
I
I
D
= 4 A
V
= 10 V
GS
V
D
= 2.5 V
GS
= 3.9 A
I
V
GS
= 16 V
0
1
2
3
4
5
–50 –25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
g
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
4
Si5509DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
NĆCHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
100.00
0.20
0.15
0.10
0.05
0.00
I
D
= 5 A
T
A
= 150 _C
10.00
1.00
0.10
T
A
= 125 _C
T
A
= 25 _C
T
A
= 25 _C
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Single Pulse Power
Threshold Voltage
50
40
30
1.5
1.3
1.1
0.9
0.7
0.5
I
D
= 250 mA
20
10
0
–4
–3
–2
–1
10
10
10
10
1
10
100 600
–50 –25
0
25
50
75
100 125 150
Time (sec)
T
– Temperature (_C)
J
Safe Operating Area, Junction-to-Case
100
10
1
Limited by r
DS(on)
10 ms
100 ms
1 s
10 s
0.1
dc
T
A
= 25 _C
Single Pulse
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
*V u minimum V at which r is specified
GS
GS
DS(on)
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
5
Si5509DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
NĆCHANNEL
Current De-Rating*
Power De-Rating
7
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
Package Limited
4
3
2
1
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
– Case Temperature (_C)
T
– Case Temperature (_C)
C
C
*The power dissipation P is based on T
= 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
D
J(max)
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
6
Si5509DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
NĆCHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
0.02
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90 _C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
7
Si5509DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
PĆCHANNEL
Output Characteristics
Transfer Characteristics
10
5
4
3
2
1
0
V
GS
= 5 V thru 3 V
8
6
4
2
0
V
GS
= 2.5 V
V
GS
= 2 V
T
= 125 _C
C
T
= 25 _C
C
V
GS
= 1.5 V
T
= –55 _C
C
0.0
0.6
1.2
1.8
2.4
3.0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
600
500
400
300
200
100
0
0.20
0.15
0.10
0.05
0.00
V
GS
= 2.5 V
C
iss
V
GS
= 4.5 V
C
oss
C
rss
0
2
4
6
8
10
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 3.9 A
V
GS
V
GS
= 4.5 V, I = 3.9 A
D
V
= 10 V
GS
= 2.5 V, I = 2.9 A
D
V
GS
= 16 V
0
1
2
3
4
5
–50 –25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
g
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
8
Si5509DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
PĆCHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.3
0.2
0.1
0.0
100.00
I
= 3.9 A
D
10.00
T
A
= 125 _C
1.00
0.10
0.01
0.00
T
A
= 125 _C
T
A
= 25 _C
T
A
= 25 _C
0.0
0.4
0.8
1.2
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Single Pulse Power
Threshold Voltage
50
40
30
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
D
= 250 mA
20
10
0
–4
–3
–2
–1
10
10
10
10
1
10
100 600
–50 –25
0
25
50
75
100 125 150
Time (sec)
T
– Temperature (_C)
J
Safe Operating Area, Junction-to-Case
100
10
Limited by r
DS(on)
10 ms
100 ms
1 s
1
10 s
dc
0.1
T
= 25 _C
A
0.01
Single Pulse
0.001
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
*V u minimum V at which r is specified
GS
GS
DS(on)
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
9
Si5509DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
PĆCHANNEL
Current De-Rating*
Power De-Rating
6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
Package Limited
3
2
1
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
– Case Temperature (_C)
T
– Case Temperature (_C)
C
C
*The power dissipation P is based on T
= 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
D
J(max)
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
10
Si5509DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
PĆCHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
0.02
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90 _C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73629.
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
11
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI5511DC-T1-GE3
Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8
VISHAY
©2020 ICPDF网 联系我们和版权申明