SI5913DC-T1-E3 [VISHAY]
P-Channel 20-V (D-S) MOSFET with Schottky Diode; P通道20 - V（D -S）的MOSFET利用肖特基二极管
| 型号： | SI5913DC-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (D-S) MOSFET with Schottky Diode |
| 文件： | 总10页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si5913DC
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
FEATURES
•
PRODUCT SUMMARY
LITTLE FOOT® Plus Schottky Power MOSFET
ID (A)a
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
- 4f
- 4f
0.084 at VGS = - 10 V
0.108 at VGS = - 4.5 V
0.175 at VGS = - 2.5 V
APPLICATIONS
RoHS
- 20
4 nC
COMPLIANT
•
HDD
- 3.5
- DC/DC Converter
•
Asynchronous Rectification
SCHOTTKY PRODUCT SUMMARY
Vf (V)
IF (A)a
VKA (V)
Diode Forward Voltage
20
0.5 at 1 A
2
S
A
1206-8 ChipFET
1
A
K
A
G
K
S
Marking Code
DJ XX
D
G
Lot Traceability
D
and Date Code
Part # Code
D
P-Channel MOSFET
K
Bottom View
Ordering Information: Si5913DC-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
VDS
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
- 20
20
VKA
VGS
V
12
TC = 25 °C
C = 70 °C
- 4f
- 4f
- 3.7b, c
- 2.9b, c
- 15
T
Continuous Drain Current (TJ = 150 °C) (MOSFET)
ID
TA = 25 °C
TA = 70 °C
IDM
IS
Pulsed Drain Current (MOSFET)
A
T
C = 25 °C
A = 25 °C
- 2.6
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
- 1.4b, c
2b
T
IF
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
IFM
5
TC = 25 °C
C = 70 °C
3.1
T
2.0
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
1.7b, c
1.1b, c
3.1
TA = 25 °C
TA = 70 °C
TC = 25 °C
PD
W
T
C = 70 °C
A = 25 °C
2.0
1.3b, c
0.8b, c
T
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendation (Peak Temperature)g, h
- 55 to 150
260
°C
Document Number: 68920
S-82298-Rev. A, 22-Sep-08
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1
New Product
Si5913DC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
62
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET)b, d
Maximum Junction-to-Foot (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)b, e
Maximum Junction-to-Foot (Drain) (Schottky)
RthJA
RthJF
RthJA
RthJF
t ≤ 5 s
Steady State
t ≤ 5 s
74
40
95
40
32
°C/W
77
Steady State
33
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s
d. Maximum under Steady State conditions is 115 °C/W.
e. Maximum under Steady State conditions is 130 °C/W.
f. Package Limited.
g. See Solder Profile (http://www.vishay.com/doc?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed cop-
per(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed an is
not required to ensure adequate bottom side soldering interconnection.
h. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 20
V
V
DS Temperature Coefficient
- 20
3
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 0.6
- 15
- 1.5
100
- 1
V
IGSS
VDS = 0 V, VGS
=
12 V
nA
VDS = - 20 V, VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
ID(on)
VDS ≤ 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 3.7 A
VGS = - 4.5 V, ID = - 3.2 A
0.070
0.090
0.140
6
0.084
0.108
0.175
Drain-Source On-State Resistancea
RDS(on)
gfs
Ω
V
GS = - 2.5 V, ID = - 2.5 A
Forward Transconductancea
Dynamicb
VDS = - 10 V, ID = - 3.7 A
S
Ciss
Coss
Crss
Input Capacitance
330
80
57
8
VDS = - 10 V, VGS = 0 V, f = 1 MHz
DS = - 10 V, VGS = - 10 V, ID = - 3.7 A
DS = - 10 V, VGS = - 4.5 V, ID = - 3.7 A
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
pF
V
V
12
6
Qg
Total Gate Charge
4
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
0.8
1.4
6
1.2
12
6
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
3
VDD = - 10 V, RL = 3.4 Ω
ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω
10
16
8
20
24
15
27
60
27
15
Turn-Off DelayTime
Fall Time
ns
Turn-On Delay Time
Rise Time
18
40
18
10
VDD = - 10 V, RL = 3.4 Ω
ID ≅ - 2.9 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
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Document Number: 68920
S-82298-Rev. A, 22-Sep-08
New Product
Si5913DC
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 1.2
- 15
- 1.2
35
A
IS = - 2.9 A, VGS = 0 V
Body Diode Voltage
- 0.75
23
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
14
21
IF = - 2.9 A, dI/dt = 100 A/µs, TJ = 25 °C
11
ns
tb
Reverse Recovery Rise Time
12
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
IF = 1 A
Min.
Typ.
0.42
0.36
0.015
0.50
0.02
0.7
Max.
0.50
0.43
0.08
5.00
0.10
7.00
50
Unit
VF
Forward Voltage Drop
V
IF = 1 A, TJ = 125 °C
Vr = 5 V
Vr = 5 V, TJ = 85 °C
Vr = 20 V
Irm
Maximum Reverse Leakage Current
Junction Capacitance
mA
pF
Vr = 20 V, TJ = 85 °C
Vr = 20 V, TJ = 125 °C
Vr = 10 V
5
CT
60
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68920
S-82298-Rev. A, 22-Sep-08
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New Product
Si5913DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
15
12
9
2.0
1.6
1.2
0.8
0.4
0.0
V
= 10 thru 4 V
GS
T
= - 55 °C
C
V
= 3 V
GS
6
T
= 25 °C
C
3
T
C
= 125 °C
V
= 2 V
GS
0
0
1
2
3
4
5
0.0
0.4
0.8
1.2
1.6
2.0
V
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
DS
Output Characteristics
Transfer Characteristics
0.20
0.16
0.12
0.08
0.04
0.00
600
500
400
300
200
100
0
V
GS
= 2.5 V
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
3
6
9
12
15
I
- Drain Current (A)
D
V
DS
- Drain-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
1.5
1.3
1.1
0.9
0.7
10
I
= 3.7 A
D
V
= 10 V, I = 3.7 A
D
GS
8
6
4
2
0
V
DS
= 10 V
V
GS
= 4.5 V, I = 3.2 A
D
V
DS
= 16 V
- 50 - 25
0
25
50
75
100 125 150
0.0
1.5
3.0
4.5
6.0
7.5
9.0
T
J
-- J unction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
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Document Number: 68920
S-82298-Rev. A, 22-Sep-08
New Product
Si5913DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
0.20
0.16
0.12
0.08
0.04
0.00
10
I
= 3.7 A
D
T
J
= 150 °C
T
J
= 25 °C
1
T
J
= 125 °C
T
J
= 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
3
6
9
12
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
1.3
1.1
0.9
0.7
0.5
I
= 250 µA
D
0
-4
-3
-2
-1
10
10
10
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1
10
- 50 - 25
0
25
50
75
100 125
150
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
*
DS(on)
10
1
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.1
T
= 25 °C
A
BVDSS
Limited
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Case
Document Number: 68920
S-82298-Rev. A, 22-Sep-08
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New Product
Si5913DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
4.0
3.2
2.4
1.6
0.8
0.0
6
5
4
3
2
1
0
Package Limited
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Foot
Current Derating*
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 68920
S-82298-Rev. A, 22-Sep-08
New Product
Si5913DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 95 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
Document Number: 68920
S-82298-Rev. A, 22-Sep-08
www.vishay.com
7
New Product
Si5913DC
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
-1
10
10
-2
-3
-4
10
10
10
T
= 150 °C
J
1
V
= 20 V
R
T
= 25 °C
J
V
= 15 V
R
0.1
-5
-6
-7
10
10
V
= 10 V
R
0.01
10
10
-8
- 50 - 25
0.001
0
25
50
75
100 125 150
0.0
0.2
0.4
V - Source-to-Drain Voltage (V)
SD
0.6
0.8
1.0
T
- Junction Temperature (°C)
J
Forward Diode Voltage
Reverse Current vs. Junction Temperature
20
16
12
8
250
200
150
100
50
4
0
0
0
4
8
12
16
20
-4
-3
-2
-1
10
10
10
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Capacitance
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Document Number: 68920
S-82298-Rev. A, 22-Sep-08
New Product
Si5913DC
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 105 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?68920.
Document Number: 68920
S-82298-Rev. A, 22-Sep-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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