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SI6443DQ-E3 [VISHAY]

Transistor;
SI6443DQ-E3
型号： SI6443DQ-E3
厂家： VISHAY    VISHAY
描述：

Transistor
文件： 总6页 (文件大小：68K)
中文：  中文翻译
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Si6443DQ  
Vishay Siliconix  
New Product  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
APPLICATIONS  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
D Battery Switch  
D Load Switch  
0.012 @ V  
= -10 V  
= -4.5 V  
-8.8  
GS  
GS  
-30  
0.019 @ V  
- 7.0  
S*  
TSSOP-8  
G
D
S
S
G
D
S
S
D
1
2
3
4
8
7
6
5
D
* Source Pins 2, 3, 6 and 7  
must be tied common.  
Si6443DQ  
Top View  
D
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
-30  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
- 8.8  
-7.2  
-7.3  
-5.9  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)  
I
-30  
DM  
a
Continuous Source Current (Diode Conduction)  
I
-1.35  
1.50  
1.0  
-0.95  
1.05  
0.67  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
60  
100  
35  
83  
120  
45  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72083  
S-22385—Rev. A, 30-Dec-02  
www.vishay.com  
1
Si6443DQ  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = -250 mA  
-1  
-3  
V
GS(th)  
DS  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
nA  
GSS  
V
= -24 V, V = 0 V  
-1  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= -24 V, V = 0 V, T = 55_C  
V
-10  
GS  
J
a
On-State Drain Current  
I
-5 V, V = -10 V  
-20  
A
D(on)  
DS  
GS  
V
= -10 V, I = -8.8 A  
0.0095  
0.0145  
0.012  
0.019  
GS  
D
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
GS  
= -4.5 V, I = -7.2 A  
D
a
Forward Transconductance  
g
V
= -15 V, I = -8.8 A  
30  
S
V
fs  
DS  
D
a
Diode Forward Voltage  
V
SD  
I
= -1.5 A, V = 0 V  
-0.71  
-1.1  
60  
S
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Q
38  
9.3  
17.7  
25  
g
Q
Q
V
= -15 V, V  
= -5 V, I = -8.8 A  
nC  
ns  
gs  
gd  
DS  
GS  
D
t
40  
35  
d(on)  
t
21  
r
V
= -15 V, R = 15 W  
L
= -10 V, R = 6 W  
GEN G  
DD  
I
^ -1 A, V  
D
Turn-Off Delay Time  
Fall Time  
t
115  
68  
180  
110  
100  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
= -1.5 A, di/dt = 100 A/ms  
65  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
30  
30  
24  
18  
12  
6
V
GS  
= 10 thru 4 V  
24  
18  
12  
6
3 V  
T
= 125_C  
C
25_C  
-55 _C  
0
0
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Document Number: 72083  
www.vishay.com  
S-22385—Rev. A, 30-Dec-02  
2
Si6443DQ  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
5000  
4000  
3000  
2000  
1000  
0
0.025  
0.020  
C
iss  
V
GS  
= 4.5 V  
= 10 V  
0.015  
0.010  
0.005  
0.000  
V
GS  
C
oss  
C
rss  
0
6
12  
18  
24  
30  
0
6
12  
18  
24  
30  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
= 8.8 A  
V
= 10 V  
DS  
GS  
I
D
I = 8.8 A  
D
6
4
2
0
0
14  
28  
42  
56  
70  
-50  
-25  
0
25  
50  
75  
100 125 150  
Q
- Total Gate Charge (nC)  
T
- Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.080  
30  
10  
T
= 150_C  
J
0.064  
0.048  
0.032  
0.016  
0.000  
I
D
= 8.8 A  
1
T
= 25_C  
J
0.1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Document Number: 72083  
www.vishay.com  
S-22385—Rev. A, 30-Dec-02  
3
Si6443DQ  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
60  
50  
0.8  
0.6  
0.4  
40  
30  
I
D
= 250 mA  
0.2  
0.0  
20  
10  
0
-0.2  
-0.4  
- 2  
- 1  
-50  
-25  
0
25  
50  
75  
100 125 150  
10  
10  
1
10  
100  
T
- Temperature (_C)  
Time (sec)  
J
Safe Operating Area, Junction-to-Case  
100  
Limited  
by r  
DS(on)  
10  
1 ms  
10 ms  
1
100 ms  
0.1  
1 s  
10 s  
dc  
T
= 25_C  
C
Single Pulse  
0.01  
0.1  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 100_C/W  
thJA  
(t)  
3. T  
- T = P Z  
A DM thJA  
JM  
Single Pulse  
4. Surface Mounted  
0.01  
- 4  
- 3  
- 2  
- 1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72083  
www.vishay.com  
S-22385—Rev. A, 30-Dec-02  
4
Si6443DQ  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
- 4  
- 3  
- 2  
- 1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 72083  
www.vishay.com  
S-22385—Rev. A, 30-Dec-02  
5
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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