SI7483ADP [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | SI7483ADP |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7483ADP
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS
VDS (V)
rDS(on) (W)
ID (A)
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% Rg tested
0.0057 @ V = −10 V
−24
−17
GS
−30
0.0095 @ V = −4.5 V
GS
APPLICATIONS
D Battery and Load Switching
− Notebook Computers
− Notebook Battery Packs
PowerPAK SO-8
S
S
6.15 mm
5.15 mm
1
S
G
2
S
3
G
4
D
8
D
7
D
6
D
D
5
Bottom View
Ordering Information: Si7483ADP-T1—E3
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−30
DS
V
V
GS
"20
T
= 25_C
= 70_C
−14
−11
−24
−19
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−60
a
continuous Source Current (Diode Conduction)
I
−4.5
5.4
−1.6
1.9
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
3.4
1.2
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
18
50
23
65
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Case (Drain)
1.0
1.5
thJC
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73025
S-41525—Rev. A, 16-Aug-04
www.vishay.com
1
Si7483ADP
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−1.0
−3.0
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= −30 V, V = 0 V
−1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −30 V, V = 0 V, T = 70_C
−10
GS
J
a
On-State Drain Current
I
V
DS
= −5 V, V = −10 V
−30
A
D(on)
GS
V
= −10 V, I = −24 A
0.0047
0.0075
0.0057
0.0095
GS
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= −4.5 V, I = −17 A
D
a
Forward Transconductance
g
70
S
V
V
= −15 V, I = −24 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= −2.9 A, V = 0 V
−0.73
−1.1
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
120
18
180
g
Q
Q
V
DS
= −15 V, V = −10 V, I = −24 A
nC
gs
gd
GS
D
33
Gate Resistance
R
g
1.6
3.2
4.8
W
Turn-On Delay Time
Rise Time
t
22
33
35
50
d(on)
t
r
V
= −15 V, R = 15 W
L
GEN g
DD
I
D
^ −1 A, V
= −10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
210
130
70
320
200
130
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = −2.9 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
= 10 thru 4 V
GS
50
40
30
20
10
0
T
= 125_C
C
3 V
25_C
−55_C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 73025
S-41525—Rev. A, 16-Aug-04
www.vishay.com
2
Si7483ADP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.015
8200
6560
4920
3280
1640
0
C
iss
0.012
0.009
0.006
0.003
0.000
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
0
5
10
15
20
25
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
GS
= 10 V
DS
I
= 24 A
I = 24 A
D
6
4
2
0
0
20
40
60
80
100
120
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.020
0.016
0.012
0.008
0.004
0.000
50
10
T
= 150_C
J
I
D
= 24 A
T
= 25_C
J
1
0.1
0
2
4
6
8
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 73025
S-41525—Rev. A, 16-Aug-04
www.vishay.com
3
Si7483ADP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
200
160
0.6
I
D
= 250 mA
0.4
0.2
120
80
0.0
40
0
−0.2
−0.4
−50 −25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
1 ms
Limited by
DS(on)
r
10
1
10 ms
100 ms
1 s
10 s
T
= 25_C
C
0.1
Single Pulse
dc
0.01
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 50_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 73025
S-41525—Rev. A, 16-Aug-04
www.vishay.com
4
Si7483ADP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 73025
S-41525—Rev. A, 16-Aug-04
www.vishay.com
5
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