SI7720DN-T1-GE3 [VISHAY]
N-Channel 30-V (D-S) MOSFET with Schottky Diode; N通道30 -V （ D- S）的MOSFET与肖特基二极管
| 型号： | SI7720DN-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 文件： | 总14页 (文件大小：552K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7720DN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
•
•
Halogen-free
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)e
12
SkyFET™ Monolithic TrenchFET® Power
MOSFET and Schottky Diode
Low Thermal Resistance PowerPAK® Package
with Small Size and Low 1.07 mm Profile
100 % Rg Tested
0.0125 at VGS = 10 V
0.015 at VGS = 4.5 V
RoHS
30
13.7 nC
12
COMPLIANT
•
•
•
PowerPAK 1212-8
100 % UIS Tested
APPLICATIONS
S
3.30 mm
3.30 mm
1
S
•
Notebook PC
2
S
D
- System Power
3
G
4
•
•
Buck Converter
Synchronous Rec
D
8
D
7
D
6
D
Schottky Diode
5
G
Bottom View
Ordering Information: Si7720DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
12e
12e
12a, b
TC = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
10a, b
A
IDM
IS
Pulsed Drain Current
50
12e
3.4a, b
T
C = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IAS
EAS
20
20
52
L = 0.1 mH
mJ
W
T
C = 25 °C
TC = 70 °C
A = 25 °C
TA = 70 °C
33
PD
Maximum Power Dissipation
3.8a, b
T
2.4a, b
- 50 to 150
260
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 68787
S-81716-Rev. A, 04-Aug-08
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1
Si7720DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Symbol
Typical
24
Maximum
Unit
RthJA
t ≤ 10 s
33
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
1.9
2.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
Drain-Source Breakdown Voltage
30
V
nA
mA
A
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
1.2
2.5
100
0.2
35
VDS = 0 V, VGS
=
20 V
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 100 °C
VDS ≥ 5 V, VGS = 10 V
0.035
3.5
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
V
20
VGS = 10 V, ID = 10 A
0.010
0.012
38
0.0125
0.015
Drain-Source On-State Resistancea
Ω
V
GS = 4.5 V, ID = 7 A
Forward Transconductancea
VDS = 10 V, ID = 10 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1790
310
130
30
13.7
5
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 10 A
pF
45
21
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
DS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
4
0.3
1.2
23
13
29
12
11
10
22
8
2.4
45
25
55
24
22
20
45
16
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
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Document Number: 68787
S-81716-Rev. A, 04-Aug-08
Si7720DN
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
12
50
0.7
30
10
A
Pulse Diode Forward Currenta
Body Diode Voltage
IS = 2 A
0.53
17
5.5
8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
9
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68787
S-81716-Rev. A, 04-Aug-08
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Si7720DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
5
4
3
2
1
0
V
GS
= 10 thru 4 V
40
30
20
10
0
T
C
= 25 °C
T
C
= 125 °C
V
GS
= 3 V
T
C
= - 55 °C
4
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.017
0.015
0.013
0.011
0.009
0.007
2200
1760
1320
880
440
0
C
iss
V
= 4.5 V
= 10 V
GS
V
GS
C
oss
C
rss
0
10
20
30
40
50
0
5
10
15
20
25
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I = 10 A
D
I
= 10 A
D
V
= 15 V
DS
8
V
GS
= 10 V
V
DS
= 10 V
6
V
GS
= 4.5 V
V
DS
= 20 V
4
2
0
0.0
6.2
12.4
18.6
24.8
31.0
- 50 - 25
0
T
25
50
75
100 125 150
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
J
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 68787
S-81716-Rev. A, 04-Aug-08
Si7720DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
0.04
0.03
0.02
0.01
0.00
100
I
= 10 A
D
10
T
J
= 150 °C
T
J
= 25 °C
1
T
= 125 °C
J
0.1
0.01
T
J
= 25 °C
6
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-1
150
120
90
60
30
0
10
-2
10
30 V
-3
10
10
20 V
-4
10 V
-5
10
10
-6
0.001
0.01
0.1
1
10
0
25
50
75
100
125
150
T
- Junction Temperature (°C)
Time (s)
J
Single Pulse Power, Junction-to-Ambient
Reverse Current (Schottky)
100
Limited by R
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
DC
T
= 25 °C
A
BVDSS Limited
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
Document Number: 68787
S-81716-Rev. A, 04-Aug-08
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Si7720DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
55
44
33
22
Package Limited
11
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
65
52
39
26
13
0
2.0
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 68787
S-81716-Rev. A, 04-Aug-08
Si7720DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 81 °C/W
thJA
(t)
3. T - T = P
Z
Single Pulse
JM
A
DM thJA
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68787.
Document Number: 68787
S-81716-Rev. A, 04-Aug-08
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Package Information
Vishay Siliconix
PowerPAK® 1212-8, (SINGLE/DUAL)
L
H
E2
E4
K
W
8
1
1
2
3
4
Z
2
4
5
L1
E3
Backside View of Single Pad
A1
L
H
K
E2
E4
H
2
E1
E
1
2
3
4
Detail Z
D1
D2
Notes:
1. Inch will govern
2
Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
E3
Backside View of Dual Pad
MILLIMETERS
INCHES
NOM.
0.041
DIM.
A
MIN.
0.97
0.00
0.23
0.23
3.20
2.95
1.98
0.48
NOM.
1.04
MAX.
MIN.
0.038
0.000
0.009
0.009
0.126
0.116
0.078
0.019
MAX.
0.044
0.002
0.016
0.013
0.134
0.124
0.088
0.035
1.12
0.05
0.41
0.33
3.40
3.15
2.24
0.89
A1
b
-
-
0.30
0.012
c
0.28
0.011
D
3.30
0.130
D1
D2
D3
D4
D5
E
3.05
0.120
2.11
0.083
-
-
0.47 TYP.
2.3 TYP.
3.30
0.0185 TYP.
0.090 TYP.
0.130
3.20
2.95
1.47
1.75
3.40
3.15
1.73
1.98
0.126
0.116
0.058
0.069
0.134
0.124
0.068
0.078
E1
E2
E3
E4
e
3.05
0.120
1.60
0.063
1.85
0.073
0.34 TYP.
0.65 BSC
0.86 TYP.
-
0.013 TYP.
0.026 BSC
0.034 TYP.
-
K
K1
H
0.35
0.30
0.30
0.06
0°
-
0.014
0.012
0.012
0.002
0°
-
0.41
0.51
0.56
0.20
12°
0.016
0.020
0.022
0.008
12°
L
0.43
0.017
L1
θ
0.13
0.005
-
-
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 TYP.
0.005 TYP.
ECN: S10-0951-Rev. J, 03-May-10
DWG: 5882
Document Number: 71656
Revison: 03-May-10
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1
AN822
Vishay Siliconix
®
PowerPAK 1212 Mounting and Thermal Considerations
Johnson Zhao
MOSFETs for switching applications are now available
The PowerPAK 1212-8 has a footprint area compara-
ble to TSOP-6. It is over 40 % smaller than standard
TSSOP-8. Its die capacity is more than twice the size
of the standard TSOP-6’s. It has thermal performance
an order of magnitude better than the SO-8, and 20
times better than TSSOP-8. Its thermal performance is
better than all current SMT packages in the market. It
will take the advantage of any PC board heat sink
capability. Bringing the junction temperature down also
increases the die efficiency by around 20 % compared
with TSSOP-8. For applications where bigger pack-
ages are typically required solely for thermal consider-
ation, the PowerPAK 1212-8 is a good option.
with die on resistances around 1 mΩ and with the
capability to handle 85 A. While these die capabilities
represent a major advance over what was available
just a few years ago, it is important for power MOSFET
packaging technology to keep pace. It should be obvi-
ous that degradation of a high performance die by the
package is undesirable. PowerPAK is a new package
technology that addresses these issues. The PowerPAK
1212-8 provides ultra-low thermal impedance in a
small package that is ideal for space-constrained
applications. In this application note, the PowerPAK
1212-8’s construction is described. Following this,
mounting information is presented. Finally, thermal
and electrical performance is discussed.
Both the single and dual PowerPAK 1212-8 utilize the
same pin-outs as the single and dual PowerPAK SO-8.
The low 1.05 mm PowerPAK height profile makes both
versions an excellent choice for applications with
space constraints.
THE PowerPAK PACKAGE
The PowerPAK 1212-8 package (Figure 1) is a deriva-
tive of PowerPAK SO-8. It utilizes the same packaging
technology, maximizing the die area. The bottom of the
die attach pad is exposed to provide a direct, low resis-
tance thermal path to the substrate the device is
mounted on. The PowerPAK 1212-8 thus translates
the benefits of the PowerPAK SO-8 into a smaller
package, with the same level of thermal performance.
PowerPAK 1212 SINGLE MOUNTING
To take the advantage of the single PowerPAK 1212-8’s
thermal performance see Application Note 826,
Recommended Minimum Pad Patterns With Outline
Drawing Access for Vishay Siliconix MOSFETs. Click
on the PowerPAK 1212-8 single in the index of this
document.
(Please refer to application note “PowerPAK SO-8
Mounting and Thermal Considerations.”)
In this figure, the drain land pattern is given to make full
contact to the drain pad on the PowerPAK package.
This land pattern can be extended to the left, right, and
top of the drawn pattern. This extension will serve to
increase the heat dissipation by decreasing the ther-
mal resistance from the foot of the PowerPAK to the
PC board and therefore to the ambient. Note that
increasing the drain land area beyond a certain point
will yield little decrease in foot-to-board and foot-to-
ambient thermal resistance. Under specific conditions
of board configuration, copper weight, and layer stack,
experiments have found that adding copper beyond an
2
area of about 0.3 to 0.5 in of will yield little improve-
ment in thermal performance.
Figure 1. PowerPAK 1212 Devices
Document Number 71681
03-Mar-06
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1
AN822
Vishay Siliconix
PowerPAK 1212 DUAL
To take the advantage of the dual PowerPAK 1212-8’s
thermal performance, the minimum recommended
land pattern can be found in Application Note 826,
Recommended Minimum Pad Patterns With Outline
Drawing Access for Vishay Siliconix MOSFETs. Click
on the PowerPAK 1212-8 dual in the index of this doc-
ument.
ture profile used, and the temperatures and time
duration, are shown in Figures 2 and 3. For the lead
(Pb)-free solder profile, see http://www.vishay.com/
doc?73257.
The gap between the two drain pads is 10 mils. This
matches the spacing of the two drain pads on the Pow-
erPAK 1212-8 dual package.
This land pattern can be extended to the left, right, and
top of the drawn pattern. This extension will serve to
increase the heat dissipation by decreasing the ther-
mal resistance from the foot of the PowerPAK to the
PC board and therefore to the ambient. Note that
increasing the drain land area beyond a certain point
will yield little decrease in foot-to-board and foot-to-
ambient thermal resistance. Under specific conditions
of board configuration, copper weight, and layer stack,
experiments have found that adding copper beyond an
area of about 0.3 to 0.5 in of will yield little improve-
Ramp-Up Rate
+ 6 °C /Second Maximum
2
Temperature at 155 15 °C
Temperature Above 180 °C
Maximum Temperature
Time at Maximum Temperature
Ramp-Down Rate
120 Seconds Maximum
ment in thermal performance.
70 - 180 Seconds
240 + 5/- 0 °C
20 - 40 Seconds
REFLOW SOLDERING
+ 6 °C/Second Maximum
Vishay Siliconix surface-mount packages meet solder
reflow reliability requirements. Devices are subjected
to solder reflow as a preconditioning test and are then
reliability-tested using temperature cycle, bias humid-
ity, HAST, or pressure pot. The solder reflow tempera-
Figure 2. Solder Reflow Temperature Profile
10 s (max)
210 - 220 °C
3 °C/s (max)
4 °C/s (max)
183 °C
140 - 170 °C
50 s (max)
3° C/s (max)
60 s (min)
Reflow Zone
Pre-Heating Zone
Maximum peak temperature at 240 °C is allowed.
Figure 3. Solder Reflow Temperatures and Time Durations
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Document Number 71681
03-Mar-06
AN822
Vishay Siliconix
TABLE 1: EQIVALENT STEADY STATE PERFORMANCE
Package
SO-8
Single
20
TSSOP-8
TSOP-8
PPAK 1212
PPAK SO-8
Single Dual
1.8 5.5
Configuration
Dual
Single
Dual
Single
40
Dual
Single
Dual
40
52
83
90
2.4
5.5
Thermal Resiatance RthJC(C/W)
PowerPAK 1212
49.8 °C
Standard SO-8
Standard TSSOP-8
TSOP-6
85 °C
149 °C
125 °C
2.4 °C/W
20 °C/W
52 °C/W
40 °C/W
PC Board at 45 °C
Figure 4. Temperature of Devices on a PC Board
THERMAL PERFORMANCE
Introduction
Spreading Copper
A basic measure of a device’s thermal performance is Designers add additional copper, spreading copper, to
the junction-to-case thermal resistance, Rθjc, or the the drain pad to aid in conducting heat from a device. It
junction to- foot thermal resistance, Rθjf. This parameter is helpful to have some information about the thermal
is measured for the device mounted to an infinite heat performance for a given area of spreading copper.
sink and is therefore a characterization of the device
only, in other words, independent of the properties of the
object to which the device is mounted. Table 1 shows a
comparison of the PowerPAK 1212-8, PowerPAK SO-8,
standard TSSOP-8 and SO-8 equivalent steady state
performance.
Figure 5 and Figure 6 show the thermal resistance of a
PowerPAK 1212-8 single and dual devices mounted on
a 2-in. x 2-in., four-layer FR-4 PC boards. The two inter-
nal layers and the backside layer are solid copper. The
internal layers were chosen as solid copper to model the
large power and ground planes common in many appli-
By minimizing the junction-to-foot thermal resistance, the cations. The top layer was cut back to a smaller area and
MOSFET die temperature is very close to the tempera- at each step junction-to-ambient thermal resistance
ture of the PC board. Consider four devices mounted on measurements were taken. The results indicate that an
a PC board with a board temperature of 45 °C (Figure 4)
.
area above 0.2 to 0.3 square inches of spreading copper
gives no additional thermal performance improvement.
A subsequent experiment was run where the copper on
the back-side was reduced, first to 50 % in stripes to
mimic circuit traces, and then totally removed. No signif-
icant effect was observed.
Suppose each device is dissipating 2 W. Using the junc-
tion-to-foot thermal resistance characteristics of the
PowerPAK 1212-8 and the other SMT packages, die
temperatures are determined to be 49.8 °C for the Pow-
erPAK 1212-8, 85 °C for the standard SO-8, 149 °C for
standard TSSOP-8, and 125 °C for TSOP-6. This is a
4.8 °C rise above the board temperature for the Power-
PAK 1212-8, and over 40 °C for other SMT packages. A
4.8 °C rise has minimal effect on r
whereas a rise
DS(ON)
of over 40 °C will cause an increase in r
as 20 %.
as high
DS(ON)
Document Number 71681
03-Mar-06
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3
AN822
Vishay Siliconix
130
120
110
100
90
105
Spreading Copper (sq. in.)
Spreading Copper (sq. in.)
95
85
75
65
55
45
80
50 %
100 %
70
100 %
0 %
60
50 %
0 %
50
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
Figure 6. Spreading Copper - Junction-to-Ambient Performance
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
Figure 5. Spreading Copper - Si7401DN
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK The PowerPAK 1212-8 combines small size with attrac-
1212-8 uses the same packaging technology and has tive thermal characteristics. By minimizing the thermal
been shown to have the same level of thermal perfor- rise above the board temperature, PowerPAK simplifies
mance while having a footprint that is more than 40 % thermal design considerations, allows the device to run
smaller than the standard TSSOP-8.
cooler, keeps r
low, and permits the device to
DS(ON)
handle more current than a same- or larger-size MOS-
FET die in the standard TSSOP-8 or SO-8 packages.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
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4
Document Number 71681
03-Mar-06
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
0.010
(0.255)
(0.990)
(1.725)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
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1
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