SI7840BDP [VISHAY]

Si7840BDP vs. Si7840DP Specification Comparison; Si7840BDP与Si7840DP规格比较
SI7840BDP
型号: SI7840BDP
厂家: VISHAY    VISHAY
描述:

Si7840BDP vs. Si7840DP Specification Comparison
Si7840BDP与Si7840DP规格比较

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SPICE Device Model Si7840BDP  
Vishay Siliconix  
N-Channel 30-V (D-S) Fast Switching MOSFET  
CHARACTERISTICS  
· N-Channel Vertical DMOS  
· Macro Model (Subcircuit Model)  
· Level 3 MOS  
· Apply for both Linear and Switching Application  
· Accurate over the - 55 to 125°C Temperature Range  
· Model the Gate Charge, Transient, and Diode Reverse Recovery  
Characteristics  
DESCRIPTION  
The attached spice model describes the typical electrical  
characteristics of the n-channel vertical DMOS. The subcircuit  
model is extracted and optimized over the - 55 to 125°C  
temperature ranges under the pulsed 0 to 10V gate drive. The  
saturated output impedance is best fit at the gate bias near the  
threshold voltage.  
A novel gate-to-drain feedback capacitance network is used to model  
the gate charge characteristics while avoiding convergence difficulties  
of the switched Cgd model. All model parameter values are optimized  
to provide a best fit to the measured electrical data and are not  
intended as an exact physical interpretation of the device.  
SUBCIRCUIT MODEL SCHEMATIC  
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate  
data sheet of the same number for guaranteed specification limits.  
Document Number: 73244  
04-Dec-04  
www.vishay.com  
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Model Si7840BDP  
Vishay Siliconix  
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)  
Simulated  
Data  
Measured  
Data  
Parameter  
Symbol  
Test Conditions  
Unit  
Static  
Gate Threshold Voltage  
On-State Drain Current a  
VGS(th)  
ID(on)  
1.8  
684  
V
A
VDS = VGS, ID = 250 mA  
VDS ³ 5 V, VGS = 10 V  
VGS = 10 V, ID = 16.5 A  
VGS = 4.5 V, ID = 13 A  
VDS = 15 V, ID = 16.5 A  
IS = 3.7 A, VGS = 0 V  
0.0070  
0.0084  
17  
0.0070  
0.0084  
60  
Drain-Source On-State Resistance a  
rDS(on)  
W
Forward Transconductance a  
Diode Forward Voltage a  
gfs  
S
V
VSD  
0.74  
0.75  
Dynamic b  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Qg  
Qgs  
Qgd  
13  
6
14  
6
VDS = 15 V, VGS = 4.5 V, ID = 16.5 A  
nC  
3.5  
3.5  
Notes  
a. Pulse test; pulse width £ 300 ms, duty cycle £ 2%.  
b. Guaranteed by design, not subject to production testing.  
www.vishay.com  
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Document Number: 73244  
04-Dec-04  
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SPICE Device Model Si7840BDP  
Vishay Siliconix  
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)  
Document Number: 73244  
04-Dec-04  
www.vishay.com  
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