概述
数据手册SI7840BDP 概述
Si7840BDP vs. Si7840DP Specification Comparison Si7840BDP与Si7840DP规格比较
SI7840BDP 数据手册
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SPICE Device Model Si7840BDP
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
CHARACTERISTICS
· N-Channel Vertical DMOS
· Macro Model (Subcircuit Model)
· Level 3 MOS
· Apply for both Linear and Switching Application
· Accurate over the - 55 to 125°C Temperature Range
· Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the - 55 to 125°C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 73244
04-Dec-04
www.vishay.com
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SPICE DeviceModel Si7840BDP
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Simulated
Data
Measured
Data
Parameter
Symbol
Test Conditions
Unit
Static
Gate Threshold Voltage
On-State Drain Current a
VGS(th)
ID(on)
1.8
684
V
A
VDS = VGS, ID = 250 mA
VDS ³ 5 V, VGS = 10 V
VGS = 10 V, ID = 16.5 A
VGS = 4.5 V, ID = 13 A
VDS = 15 V, ID = 16.5 A
IS = 3.7 A, VGS = 0 V
0.0070
0.0084
17
0.0070
0.0084
60
Drain-Source On-State Resistance a
rDS(on)
W
Forward Transconductance a
Diode Forward Voltage a
gfs
S
V
VSD
0.74
0.75
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
13
6
14
6
VDS = 15 V, VGS = 4.5 V, ID = 16.5 A
nC
3.5
3.5
Notes
a. Pulse test; pulse width £ 300 ms, duty cycle £ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
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Document Number: 73244
04-Dec-04
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SPICE Device Model Si7840BDP
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 73244
04-Dec-04
www.vishay.com
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SI7840BDP 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI7840BDP-T1-GE3 | VISHAY | Power Field-Effect Transistor, 11A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8 | 获取价格 |
|
| SI7840DP | VISHAY | N-Channel 30-V (D-S) Fast Switching MOSFET | 获取价格 |
|
| SI7840DP-T1 | VISHAY | Power Field-Effect Transistor, 11A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8 | 获取价格 |
|
| SI7842DP | VISHAY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode | 获取价格 |
|
| SI7842DP-E3 | VISHAY | TRANSISTOR 6.3 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
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| SI7842DP-T1-E3 | VISHAY | Trans MOSFET N-CH 30V 6.3A 8-Pin PowerPAK SO T/R | 获取价格 |
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| SI7842DP-T1-GE3 | VISHAY | Trans MOSFET N-CH 30V 6.3A 8-Pin PowerPAK SO T/R | 获取价格 |
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| SI7844DP | VISHAY | Dual N-Channel 30-V (D-S) MOSFET | 获取价格 |
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| SI7844DP-T1-E3 | VISHAY | Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R | 获取价格 |
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