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SI7911DN-T1

更新时间：2024-10-20 01:52:14
品牌：VISHAY
描述：Dual P-Channel 20-V (D-S) MOSFET

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SI7911DN-T1 概述

Dual P-Channel 20-V (D-S) MOSFET 双P通道20 - V（D -S）的MOSFET 功率场效应晶体管

SI7911DN-T1 规格参数

是否无铅： 含铅生命周期：Obsolete
包装说明：SMALL OUTLINE, S-XDSO-C8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.81外壳连接：DRAIN
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：4.2 A最大漏极电流 (ID)：4.2 A
最大漏源导通电阻：0.051 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：S-XDSO-C8JESD-609代码：e0
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：SQUARE
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：2.5 W
最大脉冲漏极电流 (IDM)：20 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SI7911DN-T1 数据手册

通过下载SI7911DN-T1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7911DN  
Vishay Siliconix  
New Product  
Dual P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFETS: 1.8-V Rated  
D New Low Thermal Resistance PowerPAKr  
VDS (V)  
rDS(on) (W)  
ID (A)  
Package  
0.051 @ V = -4.5 V  
-5.7  
-5.0  
-4.2  
GS  
APPLICATIONS  
-20  
0.067 @ V = -2.5  
GS  
V
V
D Portable  
0.094 @ V = -1.8  
GS  
-
-
-
PA Switch  
Battery Switch  
Load Switch  
PowerPAK 1212-8  
S
1
S
2
S1  
3.30 mm  
3.30 mm  
G
G
2
1
1
G1  
2
S2  
3
G2  
4
D1  
8
D1  
D
1
D
2
7
D2  
Ordering Information: Si7911DN-T1  
6
D2  
P-Channel MOSFET  
P-Channel MOSFET  
5
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
-20  
DS  
V
"8  
GS  
T
= 25_C  
= 85_C  
-4.2  
-3.0  
-5.7  
-4.1  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
-20  
DM  
a
continuous Source Current (Diode Conduction)  
I
-2.1  
2.5  
-1.1  
1.3  
S
T
= 25_C  
= 85_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.3  
0.85  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
40  
75  
50  
94  
7
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case  
5.6  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72340  
S-31612—Rev. A, 11-Aug-03  
www.vishay.com  
1
 
Si7911DN  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = -250 mA  
-0.40  
-1.0  
V
GS(th)  
DS  
GS  
D
I
V
= 0 V, V = "8 V  
"100  
nA  
GSS  
DS  
GS  
V
= -16 V, V = 0 V  
-1  
-5  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= -16 V, V = 0 V, T = 85_C  
GS  
J
a
On-State Drain Current  
I
V
DS  
v -5 V, V = -4.5 V  
-20  
A
D(on)  
GS  
V
= -4.5 V, I = -5.7 A  
D
0.040  
0.054  
0.075  
0.051  
0.067  
0.094  
GS  
a
V
= -2.5 V, I = -5.0 A  
D
Drain-Source On-State Resistance  
r
W
GS  
GS  
DS(on)  
V
= -1.8 V, I = -1.1 A  
D
a
Forward Transconductance  
g
14  
S
V
V
= -6 V, I = -5.7 A  
D
fs  
DS  
a
Diode Forward Voltage  
V
SD  
I
S
= -2.3 A, V = 0 V  
-0.8  
-1.2  
15  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
9.5  
1.6  
2.5  
7.2  
20  
g
Q
Q
V
DS  
= -6 V, V = -4.5 V, I = -5.7 A  
nC  
gs  
gd  
GS  
D
R
W
g
t
30  
55  
d(on)  
t
35  
r
V
DD  
= -10 V, R = 10 W  
L
I
D
^ -1 A, V = -4.5 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
70  
105  
60  
ns  
d(off)  
t
f
40  
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= -2.1 A, di/dt = 100 A/ms  
25  
50  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
20  
20  
16  
12  
8
T
= -55_C  
C
V
GS  
= 5 thru 2.5 V  
25_C  
16  
12  
8
2 V  
125_C  
1.5 V  
1 V  
4
4
0
0
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Document Number: 72340  
S-31612—Rev. A, 11-Aug-03  
www.vishay.com  
2
Si7911DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
1500  
1200  
900  
600  
300  
0
0.20  
0.16  
V
GS  
= 1.8 V  
C
iss  
0.12  
0.08  
0.04  
0.00  
V
GS  
= 2.5 V  
V
GS  
= 4.5 V  
C
oss  
C
rss  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10 V  
= 5.7 A  
V
= 4.5 V  
DS  
GS  
I
D
I = 5.7 A  
D
0
2
4
6
8
10  
12  
-50  
-25  
0
25  
50  
75  
100 125 150  
Q
- Total Gate Charge (nC)  
T
- Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.20  
0.16  
0.12  
0.08  
0.04  
0.00  
20  
10  
I
D
= 5.7 A  
I
D
= 1.1 A  
T
= 150_C  
J
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
1
2
3
4
5
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Document Number: 72340  
S-31612—Rev. A, 11-Aug-03  
www.vishay.com  
3
Si7911DN  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.4  
30  
25  
0.3  
0.2  
20  
15  
10  
I
D
= 250 mA  
0.1  
0.0  
5
0
-0.1  
-0.2  
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
10  
100  
600  
1
T
- Temperature (_C)  
Time (sec)  
J
Safe Operating Area, Junction-To-Ambient  
100  
I
Limited  
DM  
r
Limited  
DS(on)  
10  
1
P(t) = 0.0001  
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
T
= 25_C  
A
P(t) = 10  
dc  
0.1  
Single Pulse  
BV  
DSS  
Limited  
0.01  
0.1  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 75_C/W  
thJA  
(t)  
3. T  
- T = P Z  
A DM thJA  
JM  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72340  
S-31612—Rev. A, 11-Aug-03  
www.vishay.com  
4
Si7911DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
Square Wave Pulse Duration (sec)  
Document Number: 72340  
S-31612—Rev. A, 11-Aug-03  
www.vishay.com  
5

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