SI9435BDY [VISHAY]

P-Channel 30-V (D-S) MOSFET; P通道30 -V (D -S )的MOSFET
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MAX34334CSE前5页PDF页面详情预览
Si9435BDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.042 @ V
GS
=
−10
V
−30
0.055 @ V
GS
=
−6
V
0.070 @ V
GS
=
−4.5
V
FEATURES
I
D
(A)
−5.7
−5.0
−4.4
D
TrenchFETr Power MOSFET
S
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si9435BDY
Si9435BDY-T1 (with Tape and Reel)
8
7
6
5
D
D
D
D
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
−30
"20
Unit
V
−5.7
−4.6
−30
−2.3
2.5
1.6
−55
to 150
−4.1
−3.2
A
−1.1
1.3
0.8
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
40
70
24
Maximum
50
95
30
Unit
_C/W
C/W
Document Number: 72245
S-32274—Rev. B, 03-Nov-03
www.vishay.com
1
Si9435BDY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
GS(th)
I
GSS
I
DSS
I
D( )
D(on)
V
DS
= V
GS
, I
D
=
−250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
=
−30
V, V
GS
= 0 V
V
DS
=
−30
V, V
GS
= 0 V, T
J
= 70_C
V
DS
v
−10
V, V
GS
=
−10
V
V
DS
v
−5
V, V
GS
=
−4.5
V
V
GS
=
−10
V, I
D
=
−5.7
A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
=
−6
V, I
D
=
−5
A
V
GS
=
−4.5
V, I
D
=
−4.4
A
Forward Transconductance
b
Diode Forward Voltage
b
g
fs
V
SD
V
DS
=
−15
V, I
D
=
−5.7
A
I
S
=
−2.3
A, V
GS
= 0 V
−20
−5
0.033
0.043
0.056
13
−0.8
−1.1
0.042
0.055
0.070
S
V
W
−1.0
−3.0
"100
−1
−5
V
nA
mA
Symbol
Test Condition
Min
Typ
a
Max
Unit
On-State
On State Drain Current
b
A
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
=
−1.2
A, di/dt = 100 A/ms
V
DD
=
−15
V, R
L
= 15
W
I
D
^
−1
A, V
GEN
=
−10
V, R
G
= 6
W
V
DS
=
−15
V, V
GS
=
−10
V, I
D
=
−3.5
A
16
2.3
4.5
8.8
14
14
42
30
30
25
25
70
50
60
ns
W
24
nC
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
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Document Number: 72245
S-32274—Rev. B, 03-Nov-03
Si9435BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10 thru 6 V
25
I
D
Drain Current (A)
I
D
Drain Current (A)
20
15
10
5
0
0
1
2
3
4
5
V
DS
Drain-to-Source Voltage (V)
4V
30
5V
25
20
15
10
T
C
= 125_C
5
3V
0
0
1
2
3
4
5
V
GS
Gate-to-Source Voltage (V)
25_C
Vishay Siliconix
Transfer Characteristics
−55_C
On-Resistance vs. Drain Current
0.15
r
DS(on)
On-Resistance (
W
)
1100
Capacitance
C
Capacitance (pF)
0.12
880
C
iss
660
0.09
V
GS
= 4.5 V
0.06
V
GS
= 6 V
440
C
oss
C
rss
0
0.03
V
GS
= 10 V
220
0.00
0
4
8
12
16
20
0
5
10
15
20
25
30
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 3.5 A
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 5.7 A
1.4
8
6
r
DS(on)
On-Resistance (
W)
(Normalized)
6.4
9.6
12.8
16.0
1.2
4
1.0
2
0.8
0
0.0
3.2
0.6
−50
−25
0
25
50
75
100
125
150
Q
g
Total Gate Charge (nC)
Document Number: 72245
S-32274—Rev. B, 03-Nov-03
T
J
Junction Temperature (_C)
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Si9435BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.20
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
10
T
J
= 25_C
r
DS(on)
On-Resistance (
W
)
0.16
I
S
Source Current (A)
0.12
I
D
= 5.7 A
0.08
0.04
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Threshold Voltage
0.6
150
Single Pulse Power, Junction-to-Ambient
0.4
V
GS(th)
Variance (V)
120
I
D
= 250
mA
Power (W)
90
0.2
0.0
60
−0.2
30
−0.4
−50
−25
0
25
50
75
100
125
150
0
10
−3
10
−2
10
−1
Time (sec)
1
10
T
J
Temperature (_C)
100
Safe Operating Area, Junction-to-Foot
Limited by r
DS(on)
10
I
D
Drain Current (A)
1 ms
1
10 ms
100 ms
1s
10 s
dc
0.1
T
C
= 25_C
Single Pulse
0.01
0.1
1
10
100
V
DS
Drain-to-Source Voltage (V)
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Document Number: 72245
S-32274—Rev. B, 03-Nov-03
4
Si9435BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70_C/W
3. T
JM
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
2
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72245
S-32274—Rev. B, 03-Nov-03
www.vishay.com
5