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SI9435BDY

更新时间：2025-07-03 02:10:29
品牌：VISHAY
描述：P-Channel 30-V (D-S) MOSFET

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SI9435BDY 概述

P-Channel 30-V (D-S) MOSFET P通道30 -V （D -S ）的MOSFET MOS管 其他晶体管

SI9435BDY 规格参数

是否Rohs认证： 不符合生命周期：Not Recommended
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：8.49Is Samacsys：N
配置：Single最大漏极电流 (Abs) (ID)：4.1 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：2.5 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

SI9435BDY 数据手册

通过下载SI9435BDY数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si9435BDY  
Vishay Siliconix  
New Product  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.042 @ V = −10 V  
−5.7  
−5.0  
−4.4  
GS  
−30  
0.055 @ V = −6  
V
GS  
0.070 @ V = −4.5  
V
GS  
S
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
D
Ordering Information: Si9435BDY  
Si9435BDY-T1 (with Tape and Reel)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
−30  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
−4.1  
−3.2  
−5.7  
−4.6  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
−30  
a
continuous Source Current (Diode Conduction)  
I
−2.3  
2.5  
−1.1  
1.3  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.6  
0.8  
Operating Junction and Storage Temperature Range  
T , T  
−55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
40  
70  
24  
50  
95  
30  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72245  
S-32274—Rev. B, 03-Nov-03  
www.vishay.com  
1
Si9435BDY  
Vishay Siliconix  
New Product  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typa  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = −250 mA  
−1.0  
−3.0  
"100  
−1  
V
GS(th)  
DS  
GS  
D
V
= 0 V, V = "20 V  
GS  
I
nA  
DS  
GSS  
V
= −30 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= −30 V, V = 0 V, T = 70_C  
−5  
GS  
J
V
DS  
v −10 V, V = −10 V  
−20  
−5  
GS  
b
On-State Drain Current  
I
A
D(on)  
V
DS  
v −5 V, V = −4.5 V  
GS  
V
= −10 V, I = −5.7 A  
0.033  
0.043  
0.042  
0.055  
0.070  
GS  
D
b
Drain-Source On-State Resistance  
r
W
V
= −6 V, I = −5 A  
DS(on)  
GS  
D
V
GS  
= −4.5 V, I = −4.4 A  
0.056  
13  
D
b
Forward Transconductance  
g
V
= −15 V, I = −5.7 A  
S
V
fs  
DS  
D
b
Diode Forward Voltage  
V
SD  
I
S
= −2.3 A, V = 0 V  
−0.8  
−1.1  
GS  
Dynamica  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
16  
2.3  
4.5  
8.8  
14  
14  
42  
30  
30  
24  
g
Q
Q
V
= −15 V, V = −10 V, I = −3.5 A  
nC  
gs  
gd  
DS  
GS  
D
R
g
W
t
25  
25  
70  
50  
60  
d(on)  
t
r
V
= −15 V, R = 15 W  
L
GEN G  
DD  
I
D
^ −1 A, V  
= −10 V, R = 6 W  
Turn-Off Delay Time  
Fall Time  
t
d(off)  
ns  
t
f
Source-Drain Reverse Recovery Time  
Notes  
a. Guaranteed by design, not subject to production testing.  
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
t
rr  
I = −1.2 A, di/dt = 100 A/ms  
F
Document Number: 72245  
S-32274—Rev. B, 03-Nov-03  
www.vishay.com  
2
Si9435BDY  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
30  
25  
20  
15  
10  
5
30  
5 V  
V
GS  
= 10 thru 6 V  
25  
20  
15  
10  
5
4 V  
T
= 125_C  
C
25_C  
3 V  
4
−55_C  
0
0
0
0
1
2
3
4
5
1
2
3
5
V
DS  
− Drain-to-Source Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
On-Resistancevs. Drain Current  
Capacitance  
1100  
880  
660  
440  
220  
0
0.15  
0.12  
0.09  
0.06  
0.03  
C
iss  
V
GS  
= 4.5 V  
V
= 6 V  
GS  
C
oss  
V
GS  
= 10 V  
16  
C
rss  
0.00  
0
4
8
12  
20  
0
5
10  
15  
20  
25  
30  
I
D
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 15 V  
V
= 10 V  
DS  
GS  
I
= 3.5 A  
I = 5.7 A  
D
8
6
4
2
0
0.0  
3.2  
6.4  
9.6  
12.8  
16.0  
−50 −25  
0
25  
50  
75  
100 125 150  
Q
− Total Gate Charge (nC)  
T
− Junction Temperature (_C)  
g
J
Document Number: 72245  
S-32274—Rev. B, 03-Nov-03  
www.vishay.com  
3
Si9435BDY  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.20  
0.16  
0.12  
0.08  
0.04  
0.00  
50  
T
= 150_C  
J
10  
I
D
= 5.7 A  
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
SD  
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
0.6  
0.4  
150  
120  
I
D
= 250 mA  
90  
60  
0.2  
0.0  
−0.2  
−0.4  
30  
0
−3  
−2  
−1  
−50 −25  
0
25  
50  
75  
100 125 150  
10  
10  
10  
1
10  
T
− Temperature (_C)  
Time (sec)  
J
Safe Operating Area, Junction-to-Foot  
100  
10  
1
Limited by r  
DS(on)  
1 ms  
10 ms  
100 ms  
1 s  
10 s  
0.1  
T
= 25_C  
C
Single Pulse  
dc  
0.01  
0.1  
1
10  
100  
V
DS  
− Drain-to-Source Voltage (V)  
Document Number: 72245  
S-32274—Rev. B, 03-Nov-03  
www.vishay.com  
4
Si9435BDY  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 70_C/W  
thJA  
(t)  
3. T − T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 72245  
S-32274—Rev. B, 03-Nov-03  
www.vishay.com  
5

SI9435BDY CAD模型

原理图符号

PCB 封装图

SI9435BDY 替代型号

型号 制造商 描述 替代类型 文档
IRF7406PBF INFINEON HEXFET㈢Power MOSFET 功能相似

SI9435BDY 相关器件

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SI9435BDY-T1-E3 VISHAY 漏源电压Vdss(V):30V;额定电流Id(A):4.1A (Ta);最大导通阻抗Ron(mΩ):42 mOhm @ 5.7A, 10V;类型:P-Channel;栅极电荷Qg(nC):24nC @ 10V;最大耗散功率Pd(W):1.3W (Ta);栅源耐压Vgs(V):±20V;最小工作温度(℃):-55°C ;最大工作温度(℃): 150°C ;元器件封装:8-SOIC; 获取价格
SI9435BDY-T1-E3 VBSEMI 类型:P沟道;元器件封装:8-SOIC; 获取价格
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