SIE854DF-T1-E3 [VISHAY]
MOSFET N-CH D-S 100V POLARPAK;
| 型号： | SIE854DF-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | MOSFET N-CH D-S 100V POLARPAK 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiE854DF
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
ID (A)
Definition
TrenchFET® Power MOSFET
Ultra Low Thermal Resistance Using Top-
Exposed PolarPAK® Package for Double-
Sided Cooling
Silicon Package
•
•
VDS (V)
RDS(on) (Ω)
Q
g (Typ.)
Limit
Limit
60a
0.0142 at V = 10 V
GS
100
64
50 nC
•
Leadframe-Based New Encapsulated Package
- Die Not Exposed
Package Drawing
www.vishay.com/doc?72945
- Same Layout Regardless of Die Size
Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
100 % Rg and UIS Tested
•
•
PolarPAK
10
D
9
G
8
S
7
S
6
D
6
7
8
9
10
D
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
D
•
•
Primary Side Switch
Half-Bridge
D
D
S
G
G
D
1
G
2
S
3
S
4
D
5
5
4
3
2
1
Top View
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE854DF-T1-E3 (Lead (Pb)-free)
SiE854DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom View
S
N-Channel MOSFET
For Related Documents
www.vishay.com/ppg?69824
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
100
20
V
64 (Silicon Limit)
60a (Package Limit)
52
TC = 25 °C
TC = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
13.2b, c
10.5b, c
60
T
A = 25 °C
A
TA = 70 °C
Pulsed Drain Current
IDM
IS
60a
T
C = 25 °C
Continuous Source-Drain Diode Current
4.3b, c
40
80
125
80
5.2b, c
3.3b, c
TA = 25 °C
IAS
EAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
mJ
W
T
T
C = 25 °C
C = 70 °C
PD
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
°C
260
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 69824
S09-1338-Rev. B, 13-Jul-09
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1
SiE854DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
20
Maximum
Unit
Maximum Junction-to-Ambienta, b
RthJA
t ≤ 10 s
Steady State
24
1
RthJC (Drain)
°C/W
Maximum Junction-to-Case (Drain Top)
0.8
Maximum Junction-to-Case (Source)a, c
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
RthJC (Source)
2.2
2.7
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
100
V
120
- 10
mV/°C
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS , ID = 250 µA
2.5
25
4.4
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 100 V, VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
µA
V
DS = 100 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
10
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
ID(on)
A
Ω
S
RDS(on)
gfs
VGS = 10 V, ID = 13.2 A
0.0117
30
0.0142
VDS = 15 V, ID = 13.2 A
Ciss
Coss
Crss
Input Capacitance
3100
250
95
50
16
13
1
VDS = 50 V, VGS = 0 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Charge
Qg
Qgs
Qgd
Rg
75
VDS = 50 V, VGS = 10 V, ID = 13.2 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
nC
Gate Resistance
1.5
25
15
45
15
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
15
10
30
10
VDD = 50 V, RL = 5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Rise Time
ns
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
VSD
trr
TC = 25 °C
IS = 10 A
60
60
A
Body Diode Voltage
0.8
70
1.2
110
300
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
195
56
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
14
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 69824
S09-1338-Rev. B, 13-Jul-09
SiE854DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
20
16
12
8
T
= - 55 °C
C
V
= 10 V thru 7 V
GS
50
40
30
20
10
0
V
GS
= 6 V
T
C
= 25 °C
4
T
C
= 125 °C
3
V
= 4 V
V
GS
= 5 V
GS
0
0.0
0.4
0.8
1.2
1.6
2.0
0
1
2
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0120
0.0118
0.0116
0.0114
0.0112
0.0110
4000
3200
2400
1600
800
C
iss
V
GS
= 10 V
C
oss
C
rss
0
0
10
20
30
40
50
60
0
20
40
60
80
100
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
= 13.2 A
I = 13.2 A
D
D
V
DS
= 50 V
8
6
4
2
0
V
GS
= 10 V
V
DS
= 80 V
0
10
20
30
40
50
60
- 50 - 25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 69824
S09-1338-Rev. B, 13-Jul-09
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3
SiE854DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
0.030
I
= 13.2 A
D
0.025
0.020
0.015
0.010
0.005
0
T
= 125 °C
= 25 °C
A
T
J
= 25 °C
T
J
= 150 °C
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
4.0
3.5
3.0
2.5
2.0
1.5
50
40
30
20
I
= 250 µA
D
10
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
10
1
Limited by R
*
DS(on)
100 us
1 ms
10 ms
100 ms
1 s
0.1
10 s
T
= 25 °C
A
BVDSS
Single Pulse
DC
100
0.01
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 69824
S09-1338-Rev. B, 13-Jul-09
SiE854DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
70
60
140
120
100
80
Package Limited
50
40
30
20
10
0
60
40
20
0
0
25
50
75
100
125
150
25
50
75
T - Case Temperature (°C)
C
100
125
150
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Case
Current Derating*
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69824
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
5
SiE854DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 55 °C/W
thJA
(t)
3. T - T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
10
1
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Source
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69824.
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Document Number: 69824
S09-1338-Rev. B, 13-Jul-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
SIE864DF-T1-GE3
TRANSISTOR 23 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POLARPAK-10, FET General Purpose Power
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