SIE860DF_09 [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SIE860DF_09 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总10页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiE860DF
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
ID (A)
Silicon Package
•
•
TrenchFET® Gen III Power MOSFET
Ultra Low Thermal Resistance Using Top-
Exposed PolarPAK® Package for Double-
Sided Cooling
VDS (V)
RDS(on) (Ω)e
Qg (Typ.)
Limit
Limit
60a
0.0021 at V = 10 V
GS
178
30
34 nC
60a
0.0028 at V = 4.5 V
GS
154
•
Leadframe-Based New Encapsulated Package
- Die Not Exposed
Package Drawing
www.vishay.com/doc?68796
- Same Layout Regardless of Die Size
Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
100 % Rg and UIS Tested
•
•
•
PolarPAK
10
D
9
G
8
S
7
S
6
D
Compliant to RoHS directive 2002/95/EC
6
7
8
9
10
D
APPLICATIONS
D
•
•
•
•
VRM, POL
DC/DC Conversion
Synchronous Rectification
Server
D
D
S
G
G
D
1
G
2
S
3
S
4
D
5
5
4
3
2
1
S
Top View
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE860DF-T1-E3 (Lead (Pb)-free)
SiE860DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom View
N-Channel MOSFET
For Related Documents
www.vishay.com/ppg?68786
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
30
20
V
A
178 (Silicon Limit)
60a (Package Limit)
TC = 25 °C
60a
38b, c
31b, c
80
60a
4.3b, c
50
125
104
66
Continuous Drain Current (TJ = 150 °C)
ID
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
IDM
IS
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
IAS
EAS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
mJ
W
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Maximum Power Dissipation
5.2b, c
3.3b, c
TJ, Tstg
- 55 to 150
260
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
Notes:
a. Package limited at 60 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 68786
S09-1338-Rev. B, 13-Jul-09
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New Product
SiE860DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC (Drain)
RthJC (Source)
Typical
20
0.9
Maximum
Unit
Maximum Junction-to-Ambienta, b
t ≤ 10 s
Steady State
24
1.1
3.3
°C/W
Maximum Junction-to-Case (Drain Top)
Maximum Junction-to-Case (Source)a, c
2.7
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
30
V
30
mV/°C
- 6.1
VDS = VGS , ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
1.0
25
2.5
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
µA
A
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
10
On-State Drain Currenta
VGS = 10 V, ID = 21.7 A
VGS = 4.5 V, ID = 19 A
VDS = 15 V, ID = 21.7 A
0.0017
0.0023
110
0.0021
0.0028
Drain-Source On-State Resistancea
Ω
S
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Input Capacitance
4500
850
300
70
V
DS = 15 V, VGS = 0 V, f = 1 MHz
pF
Output Capacitance
Reverse Transfer Capacitance
VDS = 15 V, VGS = 10 V, ID = 20 A
105
51
Qg
Total Gate Charge
34
nC
Qgs
Qgd
Rg
V
DS = 15 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
14
9
0.9
35
1.8
55
30
75
45
25
15
30
15
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
V
DD = 15 V, RL = 1.5 Ω
20
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
50
30
Turn-On Delay Time
Rise Time
16
ns
A
V
DD = 15 V, RL = 1.5 Ω
10
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
40
10
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
VSD
trr
TC = 25 °C
IS = 10 A
60
80
1.2
55
45
Body Diode Voltage
0.8
35
30
21
14
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68786
S09-1338-Rev. B, 13-Jul-09
New Product
SiE860DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
60
40
20
0
10
T
= - 55 °C
C
V
= 10 V thru 4 V
GS
8
V
GS
= 3 V
6
4
T
C
= 25 °C
2
T
C
= 125 °C
1.5
V
GS
= 2 V
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0030
0.0026
0.0022
0.0018
0.0014
0.0010
6000
5000
4000
3000
2000
1000
0
C
iss
V
= 4.5 V
= 10 V
GS
V
GS
C
oss
C
rss
0
20
40
60
80
0
5
10
15
20
25
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
I
= 21.7 A
D
I
= 20 A
D
8
6
4
2
0
V
GS
= 10 V
V
DS
= 15 V
V
= 4.5 V
GS
V
DS
= 24 V
- 50 - 25
0
25
- Junction Temperature (°C)
J
50
75
100 125 150
0
20
Q
40
60
80
T
- Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 68786
S09-1338-Rev. B, 13-Jul-09
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New Product
SiE860DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.006
0.005
0.004
0.003
0.002
0.001
100
10
1
I
= 21.7 A
D
T
J
= 150 °C
T
= 125 °C
J
T
J
= 25 °C
T
= 25 °C
J
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
50
40
30
20
10
0
I
= 250 µA
D
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R
*
DS(on)
1 ms
10
1
10 ms
100 ms
1 s
10 s
0.1
DC
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 68786
S09-1338-Rev. B, 13-Jul-09
New Product
SiE860DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
200
160
120
80
120
90
60
30
0
Package Limited
40
0
0
25
50
75
100
125
150
25
50
75
T - Case Temperature (°C)
C
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68786
S09-1338-Rev. B, 13-Jul-09
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5
New Product
SiE860DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 55 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Source
1
10
100
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68786.
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Document Number: 68786
S09-1338-Rev. B, 13-Jul-09
Package Information
Vishay Siliconix
POLARPAK™ OPTION M
M4
M1
M4
View A
M3
M2
M3
c
(Top View)
A
D1
D
DETAIL Z
b5
b5
b5
0.254
P1
A
0.203
0.332
0.584
P1
H3
H2
H1
H1
H4
b4
b4
b1
b3
b1
b1
View A
Document Number: 68796
Revision: 11-Aug-08
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Package Information
Vishay Siliconix
MILLIMETERS
INCHES
DIM
A
MIN.
0.75
0.00
0.48
0.41
2.19
0.89
0.23
0.20
6.00
5.74
5.01
4.75
0.23
0.45
0.31
0.45
4.22
0.59
1.68
0.24
4.30
3.43
0.22
0.05
0.15
3.48
0.56
1.20
3.90
0
NOM.
0.80
-
MAX.
0.85
0.05
0.68
0.61
2.39
1.19
0.43
0.30
6.30
6.04
5.31
5.05
-
MIN.
0.030
0.000
0.019
0.016
0.086
0.035
0.009
0.008
0.236
0.226
0.197
0.187
0.009
0.018
0.012
0.018
0.166
0.023
0.066
0.009
0.169
0.135
0.009
0.002
0.006
0.137
0.022
0.047
0.153
0.000
0°
NOM.
0.031
-
MAX.
0.033
0.002
0.027
0.024
0.094
0.047
0.017
0.012
0.248
0.238
0.209
0.199
-
A1
b1
b2
b3
b4
b5
c
0.58
0.51
2.29
1.04
0.33
0.25
6.15
5.89
5.16
4.90
-
0.023
0.020
0.090
0.041
0.013
0.010
0.242
0.232
0.203
0.193
-
D
D1
E
E1
H1
H2
H3
H4
K1
K2
K3
K4
M1
M2
M3
M4
P1
T1
T2
T3
T4
T5
θ
-
0.56
0.51
0.56
4.52
0.69
-
-
0.022
0.020
0.022
0.178
0.027
-
0.41
-
0.016
-
4.37
0.64
-
0.172
0.025
-
-
-
-
-
4.50
3.58
-
4.70
3.73
-
0.177
0.141
-
0.185
0.147
-
-
-
-
-
0.20
3.64
0.76
-
0.25
4.10
0.95
-
0.008
0.143
0.030
-
0.010
0.161
0.037
-
-
-
-
-
0.18
10°
0.36
12°
0.007
10°
0.014
12°
0°
ECN: T-08441-Rev. A, 11-Aug-08
DWG: 5967
Notes
Millimeters govern over inches.
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Document Number: 68796
Revision: 11-Aug-08
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S
7.300
(0.287)
0.510
0.510
(0.020)
(0.020)
0.410
(0.016)
0.955
(0.038)
0.955
(0.038)
0.895
(0.035)
+
0.895
(0.035)
0.580
(0.023)
0.580
(0.023)
2.290
(0.090)
0.510
(0.020)
Recommended Minimum for PolarPAK Option L and S
Dimensions in mm/(Inches)
No External Traces within Broken Lines
Dot indicates Gate Pin (Part Marking)
Return to Index
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Document Number: 73491
Revision: 21-Jan-08
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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obtain written terms and conditions regarding products designed for such applications.
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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相关型号：
SIE864DF-T1-GE3
TRANSISTOR 23 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POLARPAK-10, FET General Purpose Power
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