SIHB24N65E [VISHAY]
E Series Power MOSFET; E系列功率MOSFET
| 型号： | SIHB24N65E |
| 厂家： | 
VISHAY |
| 描述： | E Series Power MOSFET |
| 文件： | 总8页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiHB24N65E
Vishay Siliconix
www.vishay.com
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
• Low Figure-of-Merit (FOM) Ron x Qg
VDS (V) at TJ max.
DS(on) max. at 25 °C ()
Qg max. (nC)
700
R
VGS = 10 V
0.145
122
21
• Low Input Capacitance (Ciss
)
Q
gs (nC)
gd (nC)
• Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Qg)
Q
37
Configuration
Single
• Avalanche Energy Rated (UIS)
D
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
D2PAK (TO-263)
• Server and Telecom Power Supplies
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction Power Supplies (PFC)
• Lighting
G
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
• Industrial
S
N-Channel MOSFET
D
G
S
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
ORDERING INFORMATION
Package
D2PAK (TO-263)
SiHB24N65E-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
20
VGS
Gate-Source Voltage AC (f > 1 Hz)
30
TC = 25 °C
C = 100 °C
24
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
ID
T
16
A
Pulsed Drain Currenta
IDM
70
Linear Derating Factor
Single Pulse Avalanche Energyb
2
508
W/°C
mJ
W
EAS
PD
Maximum Power Dissipation
250
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ, Tstg
- 55 to + 150
37
°C
TJ = 125 °C
dV/dt
V/ns
°C
11
300c
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 6 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S11-2088 Rev. B, 31-Oct-11
Document Number: 91477
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB24N65E
Vishay Siliconix
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
RthJC
-
-
62
°C/W
Maximum Junction-to-Case (Drain)
0.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
650
-
-
V
V/°C
V
-
2
-
-
-
-
-
0.72
-
4
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
-
VGS
=
20 V
-
-
100
1
nA
VDS = 650 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
μA
V
DS = 520 V, VGS = 0 V, TJ = 125 °C
-
10
0.145
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
VGS = 10 V
ID = 12 A
0.120
7.1
VDS = 8 V, ID = 5 A
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
-
2740
122
4
-
-
VGS = 0 V,
V
DS = 100 V,
f = 1 MHz
pF
nC
-
81
122
-
Qgs
Qgd
td(on)
tr
V
GS = 10 V
ID = 24 A, VDS = 520 V
21
37
-
24
48
126
105
104
-
84
VDD = 520 V, ID = 24 A,
GS = 10 V, Rg = 9.1
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
70
V
69
Gate Input Resistance
Rg
f = 1 MHz, open drain
0.68
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
-
24
96
A
G
Pulsed Diode Forward Current
ISM
S
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
VSD
trr
TJ = 25 °C, IS = 24 A, VGS = 0 V
-
-
-
-
-
1.2
V
ns
μC
A
517
9.7
30
-
-
-
TJ = 25 °C, IF = IS = 24 A,
dI/dt = 100 A/μs, VR = 20 V
Qrr
IRRM
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
S11-2088 Rev. B, 31-Oct-11
Document Number: 91477
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB24N65E
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
3
2.5
2
TOP 15 V
14 V
TJ = 25 °C
ID = 24 A
13 V
12 V
60
40
20
0
11 V
10 V
1.5
1
VGS = 10 V
9 V
5 V
0.5
0
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
0
5
10
15
20
25
30
TJ, Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
60
40
20
0
10 000
TOP 15 V
TJ = 150 °C
Ciss
14 V
13 V
12 V
11 V
10 V
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
1000
100
10
Coss = Cds + Cgd
Coss
9 V
8 V
5 V
Crss
100
1
0
5
10
15
20
25
30
0
200
300
400
500
600
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
80
60
40
20
0
24
VDS = 520 V
VDS = 335 V
VDS = 130 V
20
16
12
8
TJ = 150 °C
4
TJ = 25 °C
10
0
0
5
15
20
25
0
30
60
90
120
150
VDS, Drain-to-Source Voltage (V)
Qg, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S11-2088 Rev. B, 31-Oct-11
Document Number: 91477
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB24N65E
Vishay Siliconix
www.vishay.com
25
20
15
10
5
100
10
1
TJ = 150 °C
TJ = 25 °C
VGS = 0 V
0
0.1
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain Voltage (V)
TJ, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
825
800
775
750
725
700
675
650
1000
Operation in this area
limited by R
DS(on)
100
10
100 μs
Limited by RDS(on)
*
1
1 ms
T
T
= 25 °C
= 150 °C
C
J
Single Pulse
10 ms
BVDSS Limited
0.1
1
10
100
1000
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
TJ, Junction Temperature (°C)
Fig. 8 - Maximum Safe Operating Area
Fig. 10 - Temperature vs. Drain-to-Source Voltage
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
S11-2088 Rev. B, 31-Oct-11
Document Number: 91477
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB24N65E
Vishay Siliconix
www.vishay.com
RD
VDS
QG
10 V
VGS
D.U.T.
QGS
QGD
RG
+
-
V
DD
VG
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Charge
Fig. 12 - Switching Time Test Circuit
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
VDS
90 %
50 kΩ
12 V
0.2 µF
0.3 µF
+
-
VDS
10 %
VGS
D.U.T.
td(on) tr
td(off) tf
VGS
3 mA
Fig. 13 - Switching Time Waveforms
IG
ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
L
VDS
Vary tp to obtain
required IAS
D.U.T
IAS
RG
+
-
VDD
10 V
0.01 Ω
tp
Fig. 14 - Unclamped Inductive Test Circuit
VDS
tp
VDD
VDS
IAS
Fig. 15 - Unclamped Inductive Waveforms
S11-2088 Rev. B, 31-Oct-11
Document Number: 91477
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB24N65E
Vishay Siliconix
www.vishay.com
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91477.
S11-2088 Rev. B, 31-Oct-11
Document Number: 91477
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
B
(Datum A)
3
4
A
A
E
c2
H
L1
4
Gauge
plane
0° to 8°
4
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale 8:1
A
2 x b2
2 x b
c
E
M
M
B
0.010
A
M
0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b1, b3
5
c1
(b, b2)
Lead tip
4
E1
Section B - B and C - C
Scale: none
View A - A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
-
10.67
-
0.270
0.380
0.245
-
0.420
-
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
-
-
-
-
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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