SIHF9Z30-E3 [VISHAY]
Power Field-Effect Transistor;
| 型号： | SIHF9Z30-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总7页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• P-Channel Versatility
VDS (V)
DS(on) ()
Qg (Max.) (nC)
- 50
• Compact Plastic Package
• Fast Switching
• Low Drive Current
• Ease of Paralleling
• Excellent Temperature Stability
R
VGS = - 10 V
0.14
39
10
Q
gs (nC)
gd (nC)
Q
15
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
Configuration
Single
S
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
TO-220AB
G
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The p-channel power MOSFET’s are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common n-channel Power MOSFET’s such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.
S
D
G
D
P-Channel MOSFET
P-channel power MOSFETs are intended for use in power
stages where complementary symmetry with n-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
ORDERING INFORMATION
Package
TO-220AB
IRF9Z30PbF
SiHF9Z30-E3
IRF9Z30
Lead (Pb)-free
SnPb
SiHF9Z30
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
- 50
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
T
C = 25 °C
- 18
Continuous Drain Current
VGS at - 10 V
ID
TC = 100 °C
- 11
A
Pulsed Drain Currenta
IDM
- 60
Linear Derating Factor
0.59
W/°C
A
Inductive Current, Clamped
L = 100 μH
ILM
IL
- 60
Unclamped Inductive Current (Avalanche Current)
Maximum Power Dissipation
- 3.1
A
T
C = 25 °C
for 10 s
PD
74
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to + 150
300c
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25
c. 0.063" (1.6 mm) from case.
S12-3048-Rev. A, 24-Dec-12
Document Number: 91459
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
-
-
80
°C/W
1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = - 250 μA
VDS = VGS, ID = - 250 μA
- 50
-
-
-
-
-
V
V
- 2.0
- 4.0
500
VGS
=
20 V
-
-
nA
VDS = max. rating, VGS = 0 V
- 250
Zero Gate Voltage Drain Current
IDSS
μA
VDS = max. rating x 0.8, VGS = 0 V,
TJ =125 °C
-
-
- 1000
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = - 10 V
VDS = 2 x VGS, IDS = - 9 Ab
ID = - 9.3 Ab
-
0.093
4.7
0.14
-
3.1
S
Input Capacitance
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
900
570
140
26
-
-
VGS = 0 V,
DS = - 25 V,
f = 1.0 MHz, see fig. 9
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
pF
nC
-
39
10
15
18
170
32
96
ID = - 18 A, VDS = - 0.8
max. rating. see fig. 17
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
V
GS = - 10 V
6.9
9.7
12
Turn-On Delay Time
Rise Time
V
DD = - 25 V, ID = - 18 A,
Rg = 13 , RD = 1.3, see fig. 16
(MOSFET switching times are
essentially independent of operating
temperature)
110
21
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
64
Drain-Source Body Diode Characteristics
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
- 18
- 60
A
G
S
ISM
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = - 18 A, VGS = 0 Vb
-
-
- 6.3
250
1.1
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
54
120
0.47
ns
μC
TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/μsb
Qrr
0.20
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width 300 μs; duty cycle 2 %.
S12-3048-Rev. A, 24-Dec-12
Document Number: 91459
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
20
25
80 μs Pulse Test
- 10 V
80 μs Pulse Test
- 10 V
20
- 8 V
15
15
10
5
- 8 V
- 7 V
- 7 V
10
VGS = - 5 V
VGS = - 5 V
5
- 5 V
- 5 V
- 4 V
4
- 4 V
0
0
0
5
10
15
20
25
3
0
2
5
1
- VDS, Drain-to-Source Voltage (V)
- VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Saturation Characteristics
102
3
10
80 µs Pulse Test
VDS = 2 x VGS
Operation in this Area Limited
5
5
by RDS(on)
2
10
5
2
2
10
SiHF9Z30
10 μs
5
2
SiHF9Z32
100 μs
SiHF9Z30
2
1
SiHF9Z32
1 μs
10
5
5
10 μs
TC = 25 °C
TJ = 150 °C
Single Pulse
TJ = 150 °C
2
2
TJ = 25 °C
6
2
1
DC
0.1
102
0
8
1
4
10
2
5
10
2
5
- VGS, Gate-to-Source Voltage (V)
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
Fig. 4 - Maximum Safe Operating Area
S12-3048-Rev. A, 24-Dec-12
Document Number: 91459
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
1.25
1.15
1.05
0.95
10
8
ID = 1 mA
80 μs Pulse Test
VDS = 2 x VGS
6
TJ = 25 ° C
4
2
0
TJ = 150 °C
0.85
0.75
- 60 - 40 - 20
0
20 40 60 80 100
140 160
120
0
4
12
- I , Drain Current (A)
15
20
8
TJ, Junction Temperature (°C)
D
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 7 - Breakdown Voltage vs. Temperature
102
5
3.0
ID = - 18 A
VGS = - 10 V
2.4
2
10
TJ = 150 °C
1.8
1.2
0.6
0.0
5
2
1
TJ = 25 °C
5
2
0.1
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
10
4
6
8
0
2
TJ, Junction Temperature (°C)
- VSD, Source-to-Drain Voltage (V)
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Normalized On-Resistance vs. Temperature
S12-3048-Rev. A, 24-Dec-12
Document Number: 91459
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
2.0
1.6
1.2
2000
1600
1200
800
400
0
80 μs Pulse Test
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
VGS = - 10 V
Coss
0.8
0.4
VGS = - 20 V
Crss
0.0
1
10
2
5
102
12
24
36
48
60
0
2
5
- ID, Drain Current (A)
- VDS
, Drain-to-Source Voltage (V)
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
20
16
20
ID = - 18 A
16
VDS = - 40 V
SiHF9Z30
12
12
8
SiHF9Z32
8
4
4
0
For test circuit
see figure 17
0
25
50
75
100
125
150
0
10
20
30
40
50
TC, Case Temperature (°C)
Qg, Total Gate Charge (nC)
Fig. 12 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
S12-3048-Rev. A, 24-Dec-12
Document Number: 91459
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
Vary t to obtain
p
L
required peak I
L
V
-
DD
V
V
DSS
DD
DUT
I
+
L
t
E
V
= - 10 V
p
C
GS
t
0.05
Ω
p
V
I
DS
L
V
= 0 5 8 V
DS
EC = 0 75 BV
DD
DS
Fig. 13b - Unclamped Inductive Load Test Waveforms
Fig. 13a - Unclamped Inductive Test Circuit
10
0 = 0.5
0.2
1
0.1
PDM
0.1
0.05
0.02
t1
Single Pulse
t2
(Thermal Response)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
0.01
10-4
10-2
10-5
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
- V
(Isolated
supply)
DS
Current
regulator
Same type
as D.U.T
R
50 kΩ
D
12 V
battery
0.2 μF
0.3 μF
-
D
PS
D.U.T
Vary I to obtain
P
+
G
D.U.T
required peak I
L
R
G
- 1.5 mA
S
t
V
= - 10 V
+ V
p
GS
DS
I
I
D
G
Current
sampling
resistor
Current
sampling
resistor
Fig. 15 - Switching Time Test Circuit
Fig. 16 - Gate Charge Test Circuit
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91459.
S12-3048-Rev. A, 24-Dec-12
Document Number: 91459
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
SIHF9Z34S-GE3
TRANSISTOR 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
VISHAY
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