SIHP30N60E-E3 [VISHAY]
E Series Power MOSFET; E系列功率MOSFET
| 型号： | SIHP30N60E-E3 |
| 厂家： | 
VISHAY |
| 描述： | E Series Power MOSFET |
| 文件： | 总8页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiHP30N60E
Vishay Siliconix
www.vishay.com
E Series Power MOSFET
FEATURES
• Low Figure-of-Merit (FOM) Ron x Qg
PRODUCT SUMMARY
VDS (V) at TJ max.
DS(on) max. at 25 °C ()
Qg max. (nC)
650
• Low Input Capacitance (Ciss
)
RoHS
R
VGS = 10 V
0.125
COMPLIANT
• Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Qg)
130
15
Q
gs (nC)
gd (nC)
• Avalanche Energy Rated (UIS)
Q
39
• Compliant to RoHS Directive 2002/95/EC
Configuration
Single
APPLICATIONS
D
• Server and Telecom Power Supplies
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction Power Supplies (PFC)
• Lighting
TO-220AB
G
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
- LED Lighting
S
D
S
N-Channel MOSFET
G
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• Renewable Energy
- Solar (PV Inverters)
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP30N60E-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
600
20
V
VGS
30
TC = 25 °C
29
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
ID
TC = 100 °C
18
A
Pulsed Drain Currenta
IDM
65
Linear Derating Factor
2
0.25
W/°C
mJ
Avalanche Energy (repetitive)
Single Pulse Avalanche Energyb
Maximum Power Dissipation
EAR
EAS
690
PD
250
W
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ, Tstg
- 55 to + 150
37
°C
TJ = 125 °C
dV/dt
V/ns
°C
18
300c
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S11-2091 Rev. C, 31-Oct-11
Document Number: 91456
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
Vishay Siliconix
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
RthJC
-
-
62
°C/W
Maximum Junction-to-Case (Drain)
0.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
600
-
-
-
V
V/°C
V
-
2.0
-
0.64
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
-
4.0
100
1
VGS
=
20 V
-
-
nA
VDS = 600 V, VGS = 0 V
-
Zero Gate Voltage Drain Current
IDSS
μA
V
DS = 600 V, VGS = 0 V, TJ = 150 °C
-
-
100
0.125
-
Drain-Source On-State Resistance
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V
ID = 15 A
-
0.104
5.4
VDS = 8 V, ID = 3 A
-
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
-
2600
138
3
-
-
VGS = 0 V,
VDS = 100 V,
pF
nC
f = 1.0 MHz
-
85
130
-
Qgs
Qgd
td(on)
tr
V
GS = 10 V
ID = 15 A, VDS = 480 V
15
39
-
19
40
65
95
75
-
32
VDD = 380 V, ID = 15 A,
GS = 10 V, Rg = 4.7
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
63
V
36
Gate Input Resistance
Rg
f = 1 MHz, open drain
0.63
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
-
29
65
A
G
Pulsed Diode Forward Current
ISM
S
Diode Forward Voltage
VSD
trr
TJ = 25 °C, IS = 15 A, VGS = 0 V
-
-
-
-
-
402
7
1.3
605
15
V
ns
μC
A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
TJ = 25 °C, IF = IS = 15 A,
dI/dt = 100 A/μs, VR = 20 V
Qrr
IRRM
32
65
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
S11-2091 Rev. C, 31-Oct-11
Document Number: 91456
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
80
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
70
60
50
40
30
20
10
0
TJ = 25 °C
60
40
20
0
T
J = 25 °C
TJ = 150 °C
BOTTOM 5.0 V
5 V
25
0
5
10
15
20
25
0
5
10
15
20
30
VGS, Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ID = 15 A
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
VGS = 10 V
BOTTOM 5.0 V
T
J = 150 °C
20
VDS - Drain-to-Source Voltage (V)
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
0
5
10
15
25
30
TJ - Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S11-2091 Rev. C, 31-Oct-11
Document Number: 91456
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
Vishay Siliconix
www.vishay.com
1000
100
10 000
1000
100
10
Ciss
Operation in this area limited
by R
*
DS(on)
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd x Cds shorted
Crss = Cgd
Coss = Cds + Cgd
10
1
100 µs
Coss
1 ms
T
T
= 25 °C
= 150 °C
C
J
Single Pulse
10 ms
Crss
0.1
1
10
100
0
100
200
300
400
500
600
1
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
VDS - Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
24
30.0
25.0
20.0
15.0
10.0
5.0
ID = 15 A
VDS = 300 V
20
16
12
8
VDS = 120 V
VDS = 480 V
4
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Temperature (°C)
Qg - Total Gate Charge (nC)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
725
700
675
650
625
600
575
550
1000
100
TJ = 150 °C
10
1
TJ = 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
80 100 120 140 160
TJ - Temperature (°C)
60
20 40
- 20
0
- 60 - 40
VSD - Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 10 - Temperature vs. Drain-to-Source Voltage
S11-2091 Rev. C, 31-Oct-11
Document Number: 91456
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
Vishay Siliconix
www.vishay.com
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
VDD
D.U.T.
RG
+
V
-
DD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 15 - Unclamped Inductive Waveforms
Fig. 12 - Switching Time Test Circuit
VDS
90 %
QG
10 V
QGS
QGD
10 %
VGS
VG
td(on) tr
td(off) tf
Fig. 13 - Switching Time Waveforms
Charge
Fig. 16 - Basic Gate Charge Waveform
L
VDS
Vary tp to obtain
required IAS
Current regulator
Same type as D.U.T.
D.U.T
IAS
RG
+
-
50 kΩ
VDD
12 V
0.2 µF
0.3 µF
10 V
+
-
VDS
0.01 Ω
tp
D.U.T.
VGS
Fig. 14 - Unclamped Inductive Test Circuit
3 mA
IG
ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
S11-2091 Rev. C, 31-Oct-11
Document Number: 91456
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
Vishay Siliconix
www.vishay.com
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91456.
S11-2091 Rev. C, 31-Oct-11
Document Number: 91456
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-220AB
A
MILLIMETERS
MIN.
INCHES
MAX.
E
DIM.
A
MAX.
4.65
1.01
1.73
0.61
15.49
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MIN.
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
F
4.25
0.69
1.20
0.36
14.85
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
Ø P
b
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
* M
ECN: X10-0416-Rev. M, 01-Nov-10
DWG: 5471
b(1)
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
Document Number: 71195
Revison: 01-Nov-10
www.vishay.com
1
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Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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