SIP4282ADNP2-T1GE4 [VISHAY]
IC BUF OR INV BASED PRPHL DRVR, PDSO4, 1.60 X 1.20 MM, ROHS COMPLIANT, TDFN-4, Peripheral Driver;
| 型号： | SIP4282ADNP2-T1GE4 |
| 厂家： | 
VISHAY |
| 描述： | IC BUF OR INV BASED PRPHL DRVR, PDSO4, 1.60 X 1.20 MM, ROHS COMPLIANT, TDFN-4, Peripheral Driver 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总12页 (文件大小：411K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiP4282, SiP4282A
www.vishay.com
Vishay Siliconix
1.2 A Slew Rate Controlled Load Switch
DESCRIPTION
FEATURES
The SiP4282 series is a slew rate controlled high side
switch. The switch is of a low ON resistance P-Channel
MOSFET that supports continuous current up to 1.2 A.
• 1.8 V to 5.5 V input voltage range for SiP4282
• 1.5 V to 5.5 V input voltage range for SiP4282A
• Very low RDS(on), typically 105 mW at 5 V and
175 mW at 3 V
The SiP4282 series operates with an input voltage from
1.8 V to 5.5 V. It offers under voltage lock out that turns the
switch off when an input under voltage condition exists. The
“A” option without UVLO extends the minimum operation
voltage from 1.8 V down to 1.5 V. The SiP4282 is available
in two different versions of slew rates, 100 μs and 1 ms. The
SiP4282 series integrates load discharge circuit to ensure
the discharge of capacitive load when the switch is
disabled.
• Slew rate controlled turn-on time options:
100 μs and 1 ms
• Fast shutdown load discharge
• Low quiescent current, 4 μA for SiP4282
• Low quiescent current, 1 μA for SiP4282A
• Low shutdown current < 1 μA
• UVLO of 1.4 V for SiP4282
The SiP4282 features low input logic level to interface with
low control voltage from microprocessors. This device has a
very low operating current (typically 2.5 μA for SiP4282 and
50 pA for SiP4282A).
• PowerPAK SC-75 1.6 mm x 1.6 mm and TDFN4 1.2 mm x
1.6 mm packages
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
The SiP4282 is available in lead (Pb)-free package options
including 6 pin PPAK SC75-6, and 4 pin TDFN4 1.2 mm x
1.6 mm DFN4 packages. The operation temperature range
is specified from -40 °C to +85 °C.
APPLICATIONS
• Cellular telephones
The SiP4282 compact package options, operation voltage
range, and low operating current make it a good fit for
battery power applications.
• Digital still cameras
• Personal digital assistants (PDA)
• Hot swap supplies
• Notebook computers
• Personal communication devices
• Portable Instruments
TYPICAL APPLICATION CIRCUIT
V
IN
IN
OUT
V
OUT
SiP4282
C
1 µF
C
OUT
0.1 µF
IN
ON/OFF
GND
ON/OFF
GND
GND
Fig. 1 - SiP4282 Typical Application Circuit
S16-0792-Rev. F, 25-Apr-16
Document Number: 65740
1
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP4282, SiP4282A
www.vishay.com
Vishay Siliconix
ORDERING INFORMATION
TEMPERATURE RANGE
PACKAGE
SLEW RATE (TYP.) UNDER VOLTAGE LOCKOUT MARKING
PART NUMBER
100 μs
100 μs
100 μs
100 μs
No
Yes
No
LExxx
LFxxx
ABx
SiP4282ADVP3-T1GE3
SiP4282DVP3-T1GE3
SiP4282ADNP3-T1GE4
SiP4282DNP3-T1GE4
PPAK SC75-6
-40 °C to +85 °C
TDFN4 1.2 x 1.6
Yes
ACx
Note
•
xxx = lot code
ABSOLUTE MAXIMUM RATINGS
PARAMETER
LIMIT
UNIT
Supply Input Voltage (VIN)
-0.3 to +6
Enable Input Voltage (VON / OFF
Output Voltage (VOUT
)
-0.3 to +6
V
)
-0.3 to VIN + 0.3
Maximum Continuous Switch Current (Imax.
)
1.4
3
VIN 2.5 V
IN < 2.5 V
A
Maximum Pulsed Current (IDM) VIN
V
1.6
ESD Rating (HBM)
4000
-40 to +125
90
V
Junction Temperature (TJ)
°C
6 pin PPAK SC75 b
4 pin TDFN4 1.2 mm x 1.6 mm c
6 pin PPAK SC75 b
a
Thermal Resistance (JA
)
°C/W
mW
170
610
Power Dissipation (PD) a
4 pin TDFN4 1.2 mm x 1.6 mm c
324
Notes
•
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
a. Device mounted with all leads and power pad soldered or welded to PC board.
b. Derate 11.1 mW/°C above TA = 70 °C.
c. Derate 5.9 mW/°C above TA = 70 °C, see PCB layout.
RECOMMENDED OPERATING RANGE
PARAMETER
LIMIT
UNIT
V
Input Voltage Range (VIN) for SiP4282 Version
Input Voltage Range (VIN) for SiP4282A Version
Operating Temperature Range
1.8 to 5.5
1.5 to 5.5
-40 to +85
V
°C
S16-0792-Rev. F, 25-Apr-16
Document Number: 65740
2
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP4282, SiP4282A
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
TEST CONDITIONS
LIMITS
UNLESS OTHERWISE SPECIFIED
-40 °C to +85 °C
PARAMETER
SYMBOL
UNIT
V
IN = 5, TA = -40 °C to +85 °C
(typical values are at TA = 25 °C)
MIN. a
TYP. b
MAX. a
Operating Voltage c
For SiP4282xxx
1.8
-
-
5.5
5.5
1.8
-
VIN
Operating Voltage
For SiP4282Axxx
1.5
1
-
V
Under Voltage Voltage
Under Voltage Lockout Hysteresis
VUVLO
For SiP4282xxx, VIN falling
For SiP4282xxx
1.4
VUVLO(hyh)
250
2.5
mV
μA
For SiP4282xxx, On / Off = active
For SiP4282Axxx, On / Off = active
VIN = 5 V, IL = 500 mA, TA = 25 °C
VIN = 4.2 V, IL = 500 mA, TA = 25 °C
-
4
Quiescent Current
On-Resistance
IQ
-
0.00005
105
110
135
230
1
-
230
250
290
480
-
V
IN = 3 V, IL = 500 mA, TA = 25 °C
-
RDS(on)
m
V
IN = 1.8 V, IL = 500 mA, TA = 25 °C
-
For SiP4282Axxx, VIN = 1.5 V,
IL = 500 mA, TA = 25 °C
-
-
-
350
2800
-
520
-
On-Resistance Temp-Coefficient
On / Off Input Low Voltage d
TCRDS
ppm/°C
For SiP4282Axxx,
VIN 1.5 V to < 1.8 V
0.3
VIL
VIN 1.8 V to < 2.7 V
VIN 2.7 V to 5.5 V
VIN 1.5 V to < 2.7 V
VIN 2.7 V to < 4.2 V
VIN 4.2 V to 5.5 V
VOn / Off = 5.5 V
-
-
-
0.4
0.6
-
-
V
1.3
1.5
1.8
-
-
On / Off Input High Voltage d
VIH
-
-
-
-
On / Off Input Leakage
ISINK
RPD
-
1
μA
Output Pull-Down Resistance
On / Off = Inactive, TA = 25 °C
-
180
250
SiP4282XXX3 AND SiP4282AXXX3 VERSIONS
Output Turn-On Delay Time
Output Turn-On Rise Time
Output Turn-Off Delay Time
td(on)
t(on)
VIN = 5 V, Rload = 10 , TA = 25 °C
VIN = 5 V, Rload = 10 , TA = 25 °C
VIN = 5 V, Rload = 10 , TA = 25 °C
-
-
-
20
140
4
40
180
10
μs
td(off)
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Part requires minimum start-up of VIN 2 V to ensure operation down to 1.8 V.
d. For VIN outside this range consult typical ON / OFF threshold curve.
S16-0792-Rev. F, 25-Apr-16
Document Number: 65740
3
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP4282, SiP4282A
www.vishay.com
PIN CONFIGURATION
Vishay Siliconix
IN
6
5
4
1
OUT
OUT
ON/OFF
IN
4
3
1
2
OUT
GND
GND
IN
2
3
ON/OFF
GND
Bottom View
Bottom View
Fig. 2 - PPAK SC75-6 Package
Fig. 3 - TDFN4 1.2 mm x 1.6 mm Package
PIN DESCRIPTION
PIN NUMBER
NAME
FUNCTION
PPAK
TDFN4
1, 2
3
4
3
2
4
1
IN
GND
ON/OFF
OUT
This pin is the p-channel MOSFET source connection. Bypass to ground through a 1 μF capacitor.
Ground connection
Enable input
5, 6
This pin is the p-channel MOSFET drain connection. Bypass to ground through a 0.1 μF capacitor.
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
0.12
0.10
0.08
0.06
0.04
0.02
0
3.0
2.5
2.0
1.5
1.0
0.5
0
SiP4282A
SiP4282
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN (V)
VIN (V)
Fig. 4 - Quiescent Current vs. Input Voltage
Fig. 5 - Quiescent Current vs. Input Voltage
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
SiP4282
SiP4282A
1
VIN = 5 V
0.1
0.01
VIN = 5 V
VIN = 3 V
VIN = 3 V
0.001
- 40
- 20
0
20
40
60
80
100
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Temperature (°C)
Fig. 6 - Quiescent Current vs. Temperature
S16-0792-Rev. F, 25-Apr-16
Fig. 7 - Quiescent Current vs. Temperature
Document Number: 65740
4
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP4282, SiP4282A
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
350
300
250
200
150
100
50
300
250
200
150
100
50
VIN = 5 V
0
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
VIN (V)
Fig. 8 - Off Switch Current vs. Input Voltage
Fig. 9 - Off Switch Current vs. Temperature
550
500
450
400
350
300
250
200
150
100
50
180
160
140
120
100
80
ILOAD = 500 mA
IL = 1.2 A
VIN = 3 V
IL = 500 mA
VIN = 5 V
IL = 100 mA
60
1.5
2.0
2.5
3.0
3.5
(V)
4.0
4.5
5.0
5.5
- 40
- 20
0
20
40
60
80
100
V
Temperature (°C)
IN
Fig. 10 - RDS(on) vs. Input Voltage
Fig. 11 - RDS(on) vs. Temperature
220
210
200
190
180
170
160
150
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VIH
VIL
- 40
- 20
0
20
40
60
80
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Temperature (°C)
VIN (V)
Fig. 12 - Output Pull-Down Resistance vs. Temperature
Fig. 13 - ON / OFF Threshold vs. Input Voltage
S16-0792-Rev. F, 25-Apr-16
Document Number: 65740
5
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP4282, SiP4282A
www.vishay.com
TYPICAL WAVEFORMS
Vishay Siliconix
SiP4282xxx3 and SiP4282Axxx3 Switching
(VIN = 3 V)
SiP4282xxx3 and SiP4282Axxx3 Switching
(VIN = 5 V)
SiP4282xxx3 and SiP4282Axxx3 Turn-Off
(VIN = 3 V)
SiP4282xxx3 and SiP4282Axxx3 Turn-Off
(VIN = 5 V)
S16-0792-Rev. F, 25-Apr-16
Document Number: 65740
6
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP4282, SiP4282A
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BLOCK DIAGRAM
Vishay Siliconix
OUT
IN
Under
Voltage
Lockout
SiP4282xxx3
only
Turn-On
Slew Rate
Control
Level
Shift
ON/OFF
GND
Fig. 14 - SiP4282 Functional Block Diagram
PCB LAYOUT
Fig. 15 - TDFN4 1.2 mm x 1.6 mm PCB Layout
S16-0792-Rev. F, 25-Apr-16
Document Number: 65740
7
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP4282, SiP4282A
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Vishay Siliconix
DETAILED DESCRIPTION
The SiP4282 is a P-Channel MOSFET power switches
designed for high-side slew rate controlled load-switching
applications. Once turned on, the slew-rate control circuitry
is activated and current is ramped in a linear fashion until it
reaches the level required for the output load condition. This
is accomplished by first elevating the gate voltage of the
MOSFET up to its threshold voltage and then by linearly
increasing the gate voltage until the MOSFET becomes fully
enhanced. At this point, the gate voltage is then quickly
increased to the full input voltage to reduce RDS(on) of the
MOSFET switch and minimize any associated power losses.
Thermal Considerations
The SiP4282 is designed to maintain a constant output load
current. Due to physical limitations of the layout and
assembly of the device the maximum switch current is
1.2 A, as stated in the Absolute Maximum Ratings table.
However, another limiting characteristic for the safe
operating load current is the thermal power dissipation of
the package. To obtain the highest power dissipation (and a
thermal resistance of 90 °C/W) the power pad of the device
should be connected to a heat sink on the printed circuit
board.
All versions features a shutdown output discharge circuit
which is activated at shutdown (when the part is disabled
through the On / Off pin) and discharges the output pin
through a small internal resistor hence, turning off the load.
For SiP4282-3, in instances where the input voltage falls
below 1.4 V (typically) the under voltage lock-out circuitry
protects the MOSFET switch from entering the saturation
region or operation by shutting down the chip.
The maximum power dissipation in any application is
dependent on the maximum junction temperature,
TJ (max.) = 125 °C, the junction-to-ambient thermal
resistance for the SC-75 PPAK package, J-A = 90 °C/W,
and the ambient temperature, TA, which may be
formulaically expressed as:
TJ (max.) - TA
------------------------------------
J-A
125 - TA
----------------------
90
P (max.) =
=
APPLICATION INFORMATION
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to
about 610 mW.
Input Capacitor
While a bypass capacitor on the input is not required, a 1 μF
or larger capacitor for CIN is recommended in almost all
applications. The bypass capacitor should be placed as
physically close as possible to the SiP4282 to be effective in
minimizing transients on the input. Ceramic capacitors are
recommended over tantalum because of their ability to
withstand input current surges from low impedance sources
such as batteries in portable devices.
So long as the load current is below the 1.2 A limit, the
maximum continuous switch current becomes a function
two things: the package power dissipation and the RDS(on) at
the ambient temperature.
As an example let us calculate the worst case maximum
load current at TA = 70 °C. The worst case RDS(on) at 25 °C
occurs at an input voltage of 1.8 V and is equal to 480 m.
The RDS(on) at 70 °C can be extrapolated from this data using
the following formula
Output Capacitor
A 0.1 μF capacitor or larger across VOUT and GND is
recommended to insure proper slew operation. COUT may
be increased without limit to accommodate any load
transient condition with only minimal affect on the SiP4282
turn on slew rate time. There are no ESR or capacitor type
requirement.
RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x T)
Where TC is 3300 ppm/°C. Continuing with the calculation
we have
RDS(on) (at 70 °C) = 480 m x (1 + 0.0033 x (70 °C - 25 °C)) =
551 m
Enable
The maximum current limit is then determined by
The On / Off pin is compatible with both TTL and CMOS
logic voltage levels.
P (max.)
ILOAD (max.) ----------------------
RDS(ON)
Protection Against Reverse Voltage Condition
The P-channel MOSFET pass transistor has an intrinsic
diode that is reversed biased when the input voltage is
greater than the output voltage. Should VOUT exceed VIN,
this intrinsic diode will become forward biased and allow
excessive current to flow into the IC thru the VOUT pin and
potentially damage the IC device. Therefore extreme care
should be taken to prevent VOUT from exceeding VIN.
which in case is 1.05 A. Under the stated input voltage
condition, if the 1.05 A current limit is exceeded the internal
die temperature will rise and eventually, possibly damage
the device.
In conditions where VOUT exceeds VIN a Schottky diode in
parallel with the internal intrinsic diode is recommended to
protect the SiP4282.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65740.
S16-0792-Rev. F, 25-Apr-16
Document Number: 65740
8
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TDFN4 1.2 x 1.6 Case Outline
D
D2
b
3
4
3
Pin #1 ID
(Optional)
4
2
1
1
2
e
Index Area
(D/2 x E/2)
Bottom View
Top View
Side View
MILLIMETERS
INCHES
DIM.
MIN.
0.45
0.00
NOM.
0.55
-
MAX.
0.60
MIN.
0.017
0.00
NOM.
0.022
MAX.
0.024
0.002
A
A1
A3
b
0.05
-
0.15 REF. or 0.127 REF. (1)
0.006 or 0.005 (1)
0.20
1.15
0.81
0.25
1.20
0.30
1.25
0.91
0.008
0.045
0.032
0.010
0.012
0.049
0.036
D
0.047
D2
e
0.86
0.034
0.50 BSC
1.60
0.020
E
1.55
0.45
1.65
0.55
0.061
0.018
0.063
0.065
0.022
E2
K
0.50
0.020
0.25 typ.
0.30
0.010 typ.
0.012
L
0.25
0.35
0.010
0.014
ECN: T16-0143-Rev. C, 18-Apr-16
DWG: 5995
Note
(1)
The dimension depends on the leadframe that assembly house used.
Revision: 18-Apr-16
Document Number: 65734
1
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
PowerPAK® SC75-6L (Power IC only)
D1
Exposed pad
e
b
D
Pin4
Pin 5 Pin6
K
K
PPAKSC75
(1.6 x 1.6 mm)
E1
E
Exposed pad
L
Pin3
Pin 2
e1
Pin1
K2
K2
Pin 1 Dot
By Marking
Top View
Bottom View
A
C
A1
Side View
MILLIMETERS
INCHES
DIM
A
Min
0.70
0
Nom
0.75
-
Max
0.80
0.05
0.30
0.25
1.65
1.05
1.65
0.65
Min
0.028
0
Nom
0.030
-
Max
0.032
0.002
0.012
0.010
0.065
0.041
0.065
0.026
A1
b
0.20
0.15
1.55
0.95
1.55
0.55
0.25
0.20
1.60
1.00
1.60
0.60
0.50 BSC
1.00 BSC
-
0.008
0.006
0.0061
0.037
0.061
0.022
0.010
0.008
0.063
0.039
0.063
0.024
0.020 BSC
0.039 BSC
-
C
D
D1
E
E1
e
e1
K
0.15
0.20
0.20
-
-
0.006
0.008
0.008
-
K2
L
-
0.25
0.30
0.010
0.012
ECN: S-60845-Rev. B, 22-May-06
DWG: 5953
Document Number: 73850
22-May-06
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1
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TDFN4 1.2 x 1.6
0.86
0.50
0.30
3
4
1
2
Recommended Minimum Pads
Dimensions in mm
Document Number: 66558
Revision: 05-Mar-10
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1
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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