SIP4282ADVP-3-T1-E3 [VISHAY]

Peripheral Driver, 1 Driver, PDSO6;
SIP4282ADVP-3-T1-E3
型号: SIP4282ADVP-3-T1-E3
厂家: VISHAY    VISHAY
描述:

Peripheral Driver, 1 Driver, PDSO6

驱动 光电二极管 驱动器
文件: 总9页 (文件大小:297K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SiP4282A  
Vishay Siliconix  
New Product  
1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6  
FEATURES  
DESCRIPTION  
• 1.5 V to 5.5 V Input Voltage range  
The SiP4282A is a P-Channel MOSFET power switch  
IC designed for high-side load switching applications.  
The output switching transistor is a P-Channel MOS-  
• Very Low R  
, typically 140 mΩ  
DS(ON)  
at 5 V and 175 mΩ at 3 V  
FET device that has a 140 mΩ R  
typically to  
DS(ON)  
• Slew rate limited turn-on time options  
- SiP4282A-1: 1 ms  
increase load switching power handling capacity. The  
SiP4282A is available in two different versions with  
turn-on and turn-off characteristics ranging from very  
fast to slew rate limited. In addition to a fast turn-off  
time of 4 µs, the SiP4282A-3 version offers a shut-  
down load discharge circuit to instantaneously turn off  
a load circuit when the switch is disabled.  
- SiP4282A-3: 100 µs  
• Fast shutdown load discharge option  
• Low quiescent current, typically 2.5 µA  
• Low Shutdown Current < 1 µA  
• TTL/CMOS input logic level  
• UVLO of 1.4 V  
The SiP4282A load switch operates with an input volt-  
age ranging from 1.5 V to 5.5 V, making it ideal for both  
3 V and 5 V systems. The SiP4282A also features an  
under-voltage lock out which turns the switch off when  
an input undervoltage condition exists. Input logic lev-  
els are TTL and 2.5 V to 5 V CMOS compatible. This  
device has a very low operating current (typically  
2.5 µA), making it ideal for battery-powered applica-  
tions. In shutdown mode, the supply current  
decreases to less than 1 µA.  
• SC-75 Package  
APPLICATIONS  
• Cellular telephones  
• Digital still cameras  
• Personal digital assistants (PDA)  
• Hot swap supplies  
• Notebook computers  
• Personal communication devices  
• USB  
The SiP4282A is available in a lead (Pb)-free 6 pin  
PPAK SC75-6 package and is specified over - 40 °C to  
85 °C temperature range  
.
TYPICAL APPLICATION CIRCUIT  
V
OUT  
OUT  
IN  
V
V
V
IN  
IN  
OUT  
1
2
6
5
SiP4282A  
C
1 µF  
C
OUT  
0.1 µF  
IN  
4
ON/OFF  
GND  
ON/OFF  
3
GND  
GND  
SiP4282A Typical Application Circuit  
Document Number: 73851  
S-62494–Rev. B, 11-Dec-06  
www.vishay.com  
1
SiP4282A  
Vishay Siliconix  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Limit  
- 0.3 to 6  
Unit  
Supply Input Voltage (VIN  
Enable Input Voltage (VON  
Output Voltage (VOUT  
)
)
- 0.3 to 6  
V
)
- 0.3 to VIN + 0.3  
Maximum Continuous Switch Current (IMAX  
)
1.4  
3
VIN 2.5 V  
VIN < 2.5 V  
A
Maximum Pulsed Current (IDM) VIN  
1.6  
ESD Rating (HBM)  
4000  
- 40 to 150  
V
Junction Temperature (TJ)  
°C  
a
6 pin PPAK SC75  
6 pin PPAK SC75  
90  
°C/W  
mW  
Thermal Resistance (θJA  
)
Power Dissipation (PD)b  
610  
Notes:  
a. Device mounted with all leads and power pad soldered or welded to PC board.  
b. Derate 11.1 mW/°C above TA = 70 °C.  
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating/conditions for extended periods may affect device reliability.  
RECOMMENDED OPERATING RANGE  
Parameter  
Input Voltage Range (VIN  
Limit  
Unit  
V
)
1.5 to 5.5  
0 to 1.2  
Continuous Switch Current  
A
Operating Temperature Range  
- 40 to 85  
°C  
SPECIFICATIONS  
Limits  
- 40 to 85 °C  
Test Conditions Unless Specified  
IN = 5.0, TA = - 40 °C to 85 °C  
V
Mina  
Typb  
Maxa  
(Typical values are at TA = 25 °C)  
Parameter  
Symbol  
Unit  
SiP4282A All Versions  
Operating Voltagec  
Quiescent Current  
Off Suply Current  
Off Switch Current  
VIN  
IQ  
1.5  
-
2.5  
-
5.5  
4
V
ON/OFF = active  
ON/OFF = inactive, OUT = open  
ON/OFF = inactive, VOUT = 0  
VIN = 5 V, TA = 25 °C  
-
-
-
-
µA  
IQ(OFF)  
ISD(OFF)  
1
-
1
140  
230  
V
IN = 4.2 V, TA = 25 °C  
-
-
150  
250  
290  
480  
520  
-
RDS(on)  
V
IN = 3 V, TA = 25 °C  
IN = 1.8 V, TA = 25 °C  
IN = 1.5 V, TA = 25 °C  
On-Resistance  
175  
mΩ  
V
V
-
300  
-
350  
On-Resistance Temp-Coefficient  
ON/OFF Input Low Voltage  
TCRDS  
VIL  
-
2800  
ppm/°C  
VIN = 1.8 V to 5.5 Vd  
VIN = 1.5 V to 2.7 Vd  
-
-
-
-
-
-
0.4  
-
1.4  
2
V
VIH  
ON/OFF Input High Voltage  
ON/OFF Input Leakage  
-
V
IN = 2.7 V to 4.2 V  
VIN > 4.2 V to 5.5 V  
VON/OFF = 5.5 V  
2.4  
-
-
ISINK  
µA  
1
www.vishay.com  
2
Document Number: 73851  
S-62494–Rev. B, 11-Dec-06  
SiP4282A  
Vishay Siliconix  
SPECIFICATIONS  
Limits  
- 40 to 85 °C  
Test Conditions Unless Specified  
IN = 5.0, TA = - 40 °C to 85 °C  
V
Mina  
Typb  
Maxa  
(Typical values are at TA = 25 °C)  
Parameter  
Symbol  
Unit  
SiP4282A-1 Version  
TD(ON)  
T(ON)  
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C  
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C  
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C  
Output Turn-On Delay Time  
Output Turn-On Rise Time  
Output Turn-Off Delay Time  
SiP4282A-3 Version  
-
-
-
20  
1000  
4
40  
1500  
10  
µs  
TD(OFF)  
TD(ON)  
T(ON)  
TD(OFF)  
RPD  
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C  
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C  
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C  
ON/OFF = Inactive, TA = 25 °C  
Output Turn-On Delay Time  
Output Turn-On Rise Time  
Output Turn-Off Delay Time  
Output Pull-Down Resistance  
-
-
-
-
20  
100  
4
40  
150  
10  
µs  
W
150  
250  
Notes:  
a. The algebriac convention whereby the most negative value is a minimum and the most positive a maximum.  
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing  
c. Part requires minimum start-up of VIN 2.0 V to ensure operation down to 1.8 V.  
d. For VIN outside this range consult typical ON/OFF threshold curve.  
PIN CONFIGURATION  
1
2
3
V
V
OUT  
OUT  
6
IN  
5
4
IN  
GND  
ON/OFF  
Bottom View  
PPAK SC75-6 Package  
PIN DESCRIPTION  
Pin Number  
PPAK SC75-6  
Name  
VIN  
Function  
1, 2  
3
This pin is the P-Channel MOSFET source connection. Bypass to ground through a 1 µF capacitor.  
GND  
Ground Connection  
4
ON/OFF  
OUT  
Enable Input  
5, 6  
This pin is the P-Channel MOSFET drain connection. Bypass to ground through a 0.1 µF capacitor.  
SELECTION GUIDE  
Slew Rate  
(typ)  
Active  
Pull Down  
Part Number  
Enable  
SiP4282A-1-T1-E3  
SiP4282A-3-T1-E3  
1 ms  
No  
Active high  
Active high  
100 µs  
Yes  
ORDERING INFORMATION  
Part Number  
Marking  
LAXXX  
LCXXX  
Temperature Range  
Package  
SiP4282ADVP-1-E3  
SiP4282ADVP-3-E3  
PPAK SC75-6  
PPAK SC75-6  
- 40 °C to 85 °C  
Notes:  
XXX = Lot Code  
Document Number: 73851  
S-62494–Rev. B, 11-Dec-06  
www.vishay.com  
3
SiP4282A  
Vishay Siliconix  
TYPICAL CHARACTERISTICS internally regulated, 25 °C, unless otherwise noted  
3.5  
3
3.5  
3
V
IN  
= 5 V  
2.5  
2
2.5  
2
1.5  
1
1.5  
1
V
IN  
= 3 V  
0.5  
0
0.5  
0
1
2
3
4
5
6
- 40  
- 15  
10  
35  
60  
85  
Temperature (°C)  
V
(V)  
IN  
Quiescent Current vs. Input Voltage  
Quiescent Current vs. Temperature  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
250  
200  
150  
100  
50  
I
= 500 mA  
LOAD  
1 A  
V
= 3 V  
IN  
V
= 5 V  
IN  
500 mA  
100 mA  
0
- 40  
- 15  
10  
Temperature (°C)  
RDS(ON) vs. Temperature  
35  
60  
85  
1.5  
2
2.5  
3
3.5  
(V)  
4
4.5  
5
5.5  
V
IN  
RDS(ON) vs. Input Voltage  
2.2  
100  
2
1.8  
1.6  
1.4  
1.2  
1
80  
60  
40  
20  
0
V
IH  
V
IL  
0.8  
0.6  
0.4  
1.5  
2
2.5  
3
3.5  
(V)  
4
4.5  
5
5.5  
- 40  
- 15  
10  
Temperature (°C)  
Off Switch Current vs. Temperature  
35  
60  
85  
V
IN  
ON/OFF Threshold vs. Input Voltage  
www.vishay.com  
4
Document Number: 73851  
S-62494–Rev. B, 11-Dec-06  
SiP4282A  
Vishay Siliconix  
TYPICAL WAVEFORMS  
ON/OFF (5 V/div.)  
V
OUT  
(2 V/div.)  
I
IN  
(200 mA/div.)  
Time (5 µs/div)  
SiP4282A-1 Turn-Off (VIN = 3 V, RLOAD = 6 Ω)  
SiP4282A-1 Turn-On (VIN = 3 V, RLOAD = 6 Ω)  
ON/OFF (5 V/div.)  
ON/OFF (5 V/div.)  
V
OUT  
(2 V/div.)  
V
OUT  
(2 V/div.)  
I
IN  
(200 mA/div.)  
I
IN  
(200 mA/div.)  
Time (5 µs/div)  
Time (500 µs/div)  
SiP4282A-1 Turn-Off (VIN = 5 V, RLOAD = 10 Ω)  
SiP4282A-1 Turn-On (VIN = 5 V, RLOAD = 10 Ω)  
Document Number: 73851  
S-62494–Rev. B, 11-Dec-06  
www.vishay.com  
5
SiP4282A  
Vishay Siliconix  
TYPICAL WAVEFORMS  
ON/OFF (5 V/div.)  
ON/OFF (5 V/div.)  
(2 V/div.)  
(2 V/div.)  
(200 mA/div.)  
(200 mA/div.)  
Time (50 µs/div)  
Time (5 µs/div)  
SiP4282A-3 Turn-Off (VIN = 3 V, RLOAD = 6 Ω)  
SiP4282A-3 Turn-On (VIN = 3 V, RLOAD = 6 Ω)  
ON/OFF (5 V/div.)  
ON/OFF (5 V/div.)  
(2 V/div.)  
(200 mA/div.)  
(2 V/div.)  
(200 mA/div.)  
Time (50 µs/div)  
Time (5 µs/div)  
SiP4282A-3 Turn-Off (VIN = 5 V, RLOAD = 10 Ω)  
SiP4282A-3 Turn-On (VIN = 5 V, RLOAD = 10 Ω)  
www.vishay.com  
6
Document Number: 73851  
S-62494–Rev. B, 11-Dec-06  
SiP4282A  
Vishay Siliconix  
BLOCK DIAGRAM  
V
OUT  
IN  
Under  
Voltage  
Lockout  
Turn-On  
Slew Rate  
Control  
Level  
Shift  
ON/OFF  
SiP4282A-3 version only  
GND  
SiP4282A Functional Block Diagram  
DETAILED DESCRIPTION  
through the ON/OFF pin) and discharges the output  
pin through a small internal resistor hence, turning off  
the load.  
The SiP4282A is a P-Channel MOSFET power  
switches designed for high-side slew rate controlled  
load-switching applications. Once turned on, the slew-  
rate control circuitry is activated and current is ramped  
in a linear fashion until it reaches the level required for  
the output load condition. This is accomplished by first  
elevating the gate voltage of the MOSFET up to its  
threshold voltage and then by linearly increasing the  
gate voltage until the MOSFET becomes fully  
enhanced. At this point, the gate voltage is then quickly  
In instances where the input voltage falls below 1.4 V  
(typically) the under voltage lock-out circuitry protects  
the MOSFET switch from entering the saturation  
region or operation by shutting down the chip.  
APPLICATION INFORMATION  
increased to the full input voltage to reduce R  
the MOSFET switch and minimize any associated  
power losses.  
of  
DS(ON)  
Input Capacitor  
While a bypass capacitor on the input is not required,  
a 1 µF or larger capacitor for C is recommended in  
IN  
almost all applications. The Bypass capacitor should  
be placed as physically close as possible to the  
SiP4282A to be effective in minimizing transients on  
the input. Ceramic capacitors are recommended over  
tantalum because of their ability to withstand input cur-  
rent surges from low impedance sources such as bat-  
teries in portable devices.  
The SiP4282A-1 version has a modest 1 ms turn on  
slew rate feature, which significantly reduces in-rush  
current at turned on time and permits the load switch  
to be implemented with a small input capacitor, or no  
input capacitor at all, saving cost and space. In addi-  
tion to a 100 µs minimized slew rate, the SIP4282A-3  
features a shutdown output discharge circuit which is  
activated at shutdown (when the part is disabled  
Document Number: 73851  
S-62494–Rev. B, 11-Dec-06  
www.vishay.com  
7
SiP4282A  
Vishay Siliconix  
Output Capacitor  
A 0.1 µF capacitor or larger across V  
thermal resistance for the SC-75 PPAK package,  
θ = 90 °C/W, and the ambient temperature, T ,  
J-A  
and GND is  
OUT  
A
recommended to insure proper slew operation. C  
which may be formulaically expressed as:  
OUT  
may be increased without limit to accommodate any  
load transient condition with only minimal affect on the  
SiP4282A turn on slew rate time. There are no ESR or  
capacitor type requirement.  
TJ (max) − T  
125 − T  
90  
A
A
P (max)  
=
=
θ
J−A  
It then follows that, assuming an ambient temperature  
of 70 °C, the maximum power dissipation will be limited  
to about 610 mW.  
Enable  
The ON/OFF pin is compatible with both TTL and  
CMOS logic voltage levels.  
So long as the load current is below the 1.2 A limit, the  
maximum continuous switch current becomes a func-  
tion two things: the package power dissipation and the  
Protection Against Reverse Voltage Condition  
The P-channel MOSFET pass transistor has an intrin-  
sic diode that is reversed biased when the input volt-  
R
at the ambient temperature.  
DS(ON)  
age is greater than the output voltage. Should V  
OUT  
exceed V , this intrinsic diode will become forward  
biased and allow excessive current to flow into the IC  
IN  
As an example let us calculate the worst case maxi-  
mum load current at T = 70 °C. The worst case  
A
thru the V  
pin and potentially damage the IC  
OUT  
R
at 25 °C occurs at an input voltage of 1.8 V  
DS(ON)  
device. Therefore extreme care should be taken to  
prevent V from exceeding V .  
and is equal to 480 mΩ. The R  
) at 70 °C can be  
DS(ON  
OUT  
IN  
extrapolated from this data using the following formula  
In conditions where V  
diode in parallel with the internal intrinsic diode is rec-  
ommended to protect the SiP4282A.  
exceeds V a Schottky  
IN  
OUT  
R
(at 70 °C) = R (at 25 °C) x (1 + T x ΔT)  
DS(ON)  
DS(ON)  
C
Where T is 3300 ppm/°C. Continuing with the calcu-  
C
lation we have  
Thermal Considerations  
The SiP4282A is designed to maintain a constant out-  
put load current. Due to physical limitations of the lay-  
out and assembly of the device the maximum switch  
current is 1.2 A, as stated in the ABS MAX table. How-  
ever, another limiting characteristic for the safe operat-  
ing load current is the thermal power dissipation of the  
package. To obtain the highest power dissipation (and  
a thermal resistance of 90 °C/W) the power pad of the  
device should be connected to a heat sink on the  
printed circuit board.  
R
(at 70 °C) = 480 mΩ x (1 + 0.0033 x (70 °C -  
DS(ON)  
25 °C)) = 551 mΩ  
The maximum current limit is then determined by  
P (max)  
I
(max)  
LOAD  
R
(
)
DS ON  
which in case is 1.05 A. Under the stated input voltage  
condition, if the 1.05 A current limit is exceeded the  
internal die temperature will rise and eventually, possi-  
bly damage the device.  
The maximum power dissipation in any application  
is  
dependant  
on  
the  
maximum  
junction  
temperature, T  
= 125 °C, the junction-to-ambient  
J(MAX)  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-  
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability  
data, see http://www.vishay.com/ppg?73851.  
www.vishay.com  
8
Document Number: 73851  
S-62494–Rev. B, 11-Dec-06  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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