SIR418DP-T1-GE3 [VISHAY]
N-Channel 40-V (D-S) MOSFET; N通道40 -V （D -S ）的MOSFET
| 型号： | SIR418DP-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 40-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiR418DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
ID (A)a
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
Definition
•
•
•
•
Qg Optimized
100 % Rg Tested
100 % UIS Tested
0.005 at VGS = 10 V
0.006 at VGS = 4.5 V
40
40
24
40
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
PowerPAK® SO-8
•
DC/DC Conversion
•
Industrial
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
G
8
D
7
D
6
D
5
S
Bottom View
Ordering Information: SiR418DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Limit
40
20
40a
40a
23.5b, c
18.8b, c
70
35
4.5b, c
30
Unit
V
T
T
C = 25 °C
C = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
T
T
C = 25 °C
A = 25 °C
Continuous Source-Drain Diode Current
IAS
EAS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
45
mJ
W
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
39
25
5b, c
3.2b, c
PD
Maximum Power Dissipation
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
20
25
°C/W
2.1
3.2
Notes:
a. Based on TC = 25 °C. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 65153
S09-1813-Rev. A, 14-Sep-09
www.vishay.com
1
SiR418DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS /TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 1 µA to 250 µA
Drain-Source Breakdown Voltage
40
V
V
DS Temperature Coefficient
48
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 5.6
VDS = VGS , ID = 250 µA
1.1
30
2.4
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
µA
A
10
On-State Drain Currenta
VGS = 10 V, ID = 20 A
0.00415
0.0048
95
0.005
0.006
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 20 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
2410
371
141
50
V
DS = 20 V, VGS = 0 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
VDS = 20 V, VGS = 10 V, ID = 20 A
VDS = 20 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
75
36
Qg
Total Gate Charge
24
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
6.5
7.0
0.7
19
0.2
1.4
35
140
60
24
18
20
45
16
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
73
V
DD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
32
12
ns
Turn-On Delay Time
Rise Time
9
10
V
DD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
25
8
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 4 A
35
70
1.1
45
30
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.71
24
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
15
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
13
ns
tb
11
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65153
S09-1813-Rev. A, 14-Sep-09
SiR418DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
10
8
V
GS
= 10 V thru 3 V
56
42
28
14
0
6
4
T
C
= 25 °C
2
T
C
= 125 °C
1
V
GS
= 2 V
T
C
= - 55 °C
3
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0059
0.0055
0.0051
0.0047
0.0043
0.0039
0.0035
3200
2560
1920
1280
640
C
iss
V
= 4.5 V
= 10 V
GS
V
GS
C
oss
C
rss
0
0
14
28
42
56
70
0
8
16
24
32
40
I
- Drain Current (A)
D
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
8
2.0
1.7
1.4
1.1
0.8
0.5
I
= 20 A
I
= 20 A
D
D
V
GS
= 10 V
V
DS
= 10 V
V
DS
= 20 V
6
V
GS
= 4.5 V
4
V
= 30 V
DS
2
0
0
12
24
36
48
60
- 50 - 25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65153
S09-1813-Rev. A, 14-Sep-09
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3
SiR418DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
0.020
I
= 20 A
D
0.016
0.012
0.008
0.004
0.000
T
J
= 150 °C
T
J
= 25 °C
T
= 125 °C
= 25 °C
J
0.1
0.01
T
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
200
160
120
80
- 0.1
- 0.4
- 0.7
- 1.0
I
= 5 mA
D
I
= 250 µA
D
40
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
J
- Temperature (°C)
Single Pulse Power
Threshold Voltage
100
Limited by R
*
DS(on)
10
1 ms
10 ms
1
100 ms
1 s
10 s
0.1
T
= 25 °C
A
DC
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 65153
S09-1813-Rev. A, 14-Sep-09
SiR418DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
75
60
45
30
15
0
Package Limited
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
0
25
50
T - Ambient Temperature (°C)
A
75
100
125
150
T
C
- Case Temperature (°C)
Power Junction-to-Case
Power Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65153
S09-1813-Rev. A, 14-Sep-09
www.vishay.com
5
SiR418DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 110 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65153.
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Document Number: 65153
S09-1813-Rev. A, 14-Sep-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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