SQ2319ES-T1-GE3 [VISHAY]
Trans MOSFET P-CH 40V 3.3A 3-Pin SOT-23 T/R;
| 型号： | SQ2319ES-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Trans MOSFET P-CH 40V 3.3A 3-Pin SOT-23 T/R 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ2319ES
Vishay Siliconix
www.vishay.com
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
PRODUCT SUMMARY
VDS (V)
- 40
0.075
0.145
- 4.6
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A)
• 100 % Rg and UIS Tested
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
TO-236
(SOT-23)
S
G
S
1
2
G
3
D
Top View
D
SQ2319ES (8H)*
* Marking Code
P-Channel MOSFET
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and Halogen-free
SQ2319ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
- 40
V
VGS
20
TC = 25 °C
- 4.6
Continuous Drain Current
ID
T
C = 125 °C
- 2.6
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
- 3.7
A
IDM
IAS
EAS
- 18
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
- 12
L = 0.1 mH
TC = 25 °C
7.2
mJ
W
3
Maximum Power Dissipationa
PD
T
C = 125 °C
1
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
166
50
UNIT
Junction-to-Ambient
PCB Mountb
°C/W
Junction-to-Foot (Drain)
RthJF
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
S11-2111-Rev. C, 07-Nov-11
Document Number: 65735
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ES
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = - 250 μA
- 40
-
-
V
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS
=
20 V
-
-
100
- 1
nA
μA
A
VGS = 0 V
VGS = 0 V
VDS = - 40 V
VDS = - 40 V, TJ = 125 °C
VDS = - 40 V, TJ = 175 °C
VDS- 5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-
-
- 50
- 150
-
VGS = 0 V
-
-
ID(on)
VGS = - 10 V
- 10
-
V
GS = - 10 V
GS = - 10 V
ID = - 3 A
-
-
-
-
-
0.061
0.075
0.116
0.139
0.145
-
V
ID = - 3 A, TJ = 125 °C
ID = - 3 A, TJ = 175 °C
ID = - 2.4 A
-
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V
VGS = - 4.5 V
-
0.120
8
Forward Transconductanceb
Dynamicb
gfs
VDS = - 5 V, ID = - 3 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
5
-
-
-
-
493
76
51
10.5
1.8
2.6
10
5
620
95
65
16
-
VGS = 0 V
VDS = - 25 V, f = 1 MHz
pF
Qgs
Qgd
Rg
V
GS = - 10 V
VDS = - 20 V, ID = - 3 A
f = 1 MHz
nC
-
15
8
td(on)
tr
td(off)
tf
11
19
8
17
29
12
VDD = - 20 V, RL = 6.7
ID - 3 A, VGEN = - 10 V, Rg = 1
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
- 18
A
V
Forward Voltage
VSD
IF = - 1.5 A, VGS = 0
- 0.8
- 1.2
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2111-Rev. C, 07-Nov-11
Document Number: 65735
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ES
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
16
12
8
20
16
12
8
VGS = 10 V thru 6 V
VGS = 5 V
TC = 25 °C
4
4
VGS = 4 V
TC = 125 °C
TC = - 55 °C
0
0
0
2
4
6
8
10
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
15
12
9
2.0
1.6
1.2
0.8
0.4
0.0
TC = - 55 °C
TC = 25 °C
TC = 125 °C
6
TC = 25 °C
3
TC = 125 °C
TC = - 55 °C
0
0.0
1.6
3.2
4.8
6.4
8.0
0
2
4
6
8
10
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
1.0
0.8
0.6
0.4
0.2
0.0
800
700
600
500
400
300
200
100
0
Ciss
VGS = 4.5 V
Coss
VGS = 10 V
Crss
0
4
8
12
16
20
0
5
10
15
20
25
30
35
40
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
S11-2111-Rev. C, 07-Nov-11
Document Number: 65735
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ES
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
2.1
1.7
1.3
0.9
0.5
10
ID = 3 A
ID = 3 A
VDS = 20 V
8
VGS = 10 V
6
4
VGS = 4.5 V
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
2
4
6
8
10
12
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
1.0
0.8
0.6
0.4
0.2
0.0
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
TJ = 150 °C
TJ = 25 °C
0.001
0.0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.0
- 40
- 42
- 44
- 46
- 48
- 50
ID = 1 mA
0.7
0.4
ID = 250 μA
ID = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S11-2111-Rev. C, 07-Nov-11
Document Number: 65735
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ES
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
10
1
100 μs
1 ms
10 ms
Limited by RDS(on)
*
100 ms
0.1
0.01
1 s
BVDSS Limited
10 s, DC
TC = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 166 °C/W
thJA
(t)
3. T - T = P
JM DM thJA
Z
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2111-Rev. C, 07-Nov-11
Document Number: 65735
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ES
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65735.
S11-2111-Rev. C, 07-Nov-11
Document Number: 65735
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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