SQD45P03-12-GE3 [VISHAY]
MOSFET P-CH D-S 30V TO252;
| 型号： | SQD45P03-12-GE3 |
| 厂家： | 
VISHAY |
| 描述： | MOSFET P-CH D-S 30V TO252 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQD45P03-12
Vishay Siliconix
www.vishay.com
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
- 30
0.010
0.024
- 50
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
• 100 % Rg and UIS Tested
ID (A)
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Configuration
Single
S
TO-252
G
Drain Connected to Tab
G
D
S
D
Top View
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-252
SQD45P03-12-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 30
V
Gate-Source Voltage
VGS
20
- 50
TC = 25 °Ca
TC = 125 °C
Continuous Drain Current
ID
- 37
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
- 50
A
IDM
IAS
EAS
- 200
- 31
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
48
mJ
W
TC = 25 °C
TC = 125 °C
71
Maximum Power Dissipationb
PD
23
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
50
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
2.1
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = - 250 μA
- 30
-
-
V
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS
=
20 V
-
-
100
- 1
nA
μA
A
VGS = 0 V
VGS = 0 V
VDS = - 30 V
VDS = - 30 V, TJ = 125 °C
VDS = - 30 V, TJ = 175 °C
VDS- 5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-
-
- 50
- 150
-
VGS = 0 V
-
-
ID(on)
VGS = - 10 V
- 50
-
0.008
-
V
GS = - 10 V
GS = - 10 V
ID = - 15 A
-
-
-
-
-
0.010
0.015
0.017
0.024
-
V
ID = - 15 A, TJ = 125 °C
ID = - 15 A, TJ = 175 °C
ID = - 12 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V
VGS = - 4.5 V
-
0.019
34
Forward Transconductanceb
Dynamicb
gfs
VDS = - 15 V, ID = - 17 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
2794
616
470
55.3
7.3
14
3495
770
590
83
VGS = 0 V
VDS = - 15 V, f = 1 MHz
-
pF
-
-
Qgs
Qgd
Rg
V
GS = - 10 V
VDS = - 15 V, ID = - 45 A
f = 1 MHz
-
-
nC
-
-
1.40
2.86
11
4.50
16.5
16.5
43.5
28.5
td(on)
tr
td(off)
tf
-
-
-
-
11
VDD = - 15 V, RL = 0.33
ID - 45 A, VGEN = - 10 V, Rg = 1
ns
29
19
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
- 200
- 1.5
A
V
Forward Voltage
VSD
IF = - 40 A, VGS = 0
- 0.9
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
80
60
40
20
0
100
80
60
40
20
0
V
= 10 V thru 6 V
GS
V
= 5 V
GS
V
= 4 V
GS
T
= 25 °C
C
T
C
= 125 °C
T
C
= - 55 °C
0
3
6
9
12
15
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
Output Characteristics
Transfer Characteristics
0.05
0.04
0.03
0.02
0.01
0.00
60
48
36
24
12
0
TC = - 55 °C
TC = 25 °C
VGS = 4.5 V
TC = 125 °C
VGS = 10 V
0
20
40
60
80
100
0
8
16
24
32
40
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
2.0
1.7
1.4
1.1
0.8
0.5
100
10
1
I
= 15 A
D
V
GS
= 10 V
T
J
= 150 °C
T
J
= 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 50 - 25
0
25
50
75 100 125 150 175
V
SD
- Source-to-Drain Voltage (V)
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.10
0.08
0.06
0.04
0.02
0.00
10
I
= 45 A
D
8
V
= 15 V
DS
6
4
2
T
= 150 °C
J
T
J
= 25 °C
0
0
10
20
30
40
50
60
0
2
4
6
8
10
Q
- Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
g
On-Resistance vs. Gate-to-Source Voltage
Gate Charge
5000
4000
3000
2000
1000
0
1.1
0.8
I
= 250 µA
D
C
iss
0.5
I
= 5 mA
D
0.2
C
oss
- 0.1
- 0.4
C
rss
0
5
10
15
20
25
30
- 50 - 25
0
25
50
75 100 125 150 175
V
- Drain-to-Source Voltage (V)
DS
T
J
- Temperature (°C)
Capacitance
Threshold Voltage
- 30
- 32
- 34
- 36
- 38
- 40
I
= 10 mA
D
- 50 - 25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
I
Limited
100
10
DM
100 µs
1 ms
Limited by R
*
DS(on)
I
Limited
D
10 ms
100 ms
1 s, 10 s, DC
1
0.1
0.01
T
= 25 °C
C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65549.
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
MAX.
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
-
MIN.
0.086
-
2.18
-
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
-
0.265
-
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
-
0.035
-
1.01
0.040
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
E1
Note
Dimension L3 is for reference only.
•
Revision: 02-Sep-13
Document Number: 64424
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
0.055
(1.397)
(4.572)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72594
Revision: 21-Jan-08
www.vishay.com
3
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Revision: 02-Oct-12
Document Number: 91000
1
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