SQJ460EP [VISHAY]
Automotive N-Channel 60 V (D-S) 175 °C MOSFET; 汽车N沟道60 V (D -S ), 175 ℃的MOSFET型号: | SQJ460EP |
厂家: | VISHAY |
描述: | Automotive N-Channel 60 V (D-S) 175 °C MOSFET |
文件: | 总10页 (文件大小:187K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SQJ460EP
Vishay Siliconix
www.vishay.com
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
60
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
0.0096
0.0120
32
• 100 % Rg and UIS Tested
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
D
PowerPAK® SO-8L Single
G
D
4
G
3
S
2
S
N-Channel MOSFET
S
1
S
ORDERING INFORMATION
Package
PowerPAK SO-8L
SQJ460EP-T1-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
20
TC = 25 °C
32
Continuous Drain Currenta
ID
T
C = 125 °C
32
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
32
A
IDM
IAS
EAS
128
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
38
L = 0.1 mH
72
mJ
W
TC = 25 °C
83
27
Maximum Power Dissipationb
PD
TC = 125 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
- 55 to + 175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
65
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
1.8
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-1363-Rev. A, 18-Jul-11
Document Number: 67034
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ460EP
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = 250 μA
60
1.5
-
-
2.0
-
-
V
VDS = VGS, ID = 250 μA
2.5
VDS = 0 V, VGS
=
20 V
100
1
nA
μA
A
VGS = 0 V
VDS = 60 V
VDS = 60 V, TJ = 125 °C
VDS = 60 V, TJ = 175 °C
VDS5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
VGS = 0 V
VGS = 0 V
VGS = 10 V
-
-
50
150
-
-
-
ID(on)
30
-
-
V
V
GS = 10 V
GS = 10 V
ID = 18 A
0.0083 0.0096
ID = 18 A, TJ = 125 °C
ID = 18 A, TJ = 175 °C
ID = 15 A
-
-
-
0.0162
0.0200
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V
VGS = 4.5 V
-
-
0.0101 0.0120
Forward Transconductanceb
Dynamicb
gfs
VDS = 15 V, ID = 15 A
-
60
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
1
-
-
-
-
3836
393
188
71
4795
495
235
106
-
VGS = 0 V
VDS = 25 V, f = 1 MHz
pF
Qgs
Qgd
Rg
V
GS = 10 V
VDS = 30 V, ID = 18 A
f = 1 MHz
9.7
12.5
2.1
12
nC
-
3.2
18
td(on)
tr
td(off)
tf
11
17
VDD = 30 V, RL = 30
ID 1 A, VGEN = 10 V, Rg = 1
ns
56
84
25
32
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
128
1.2
A
V
Forward Voltage
VSD
IF = 10 A, VGS = 0
0.8
Notes
g. Pulse test; pulse width 300 μs, duty cycle 2 %.
h. Guaranteed by design, not subject to production testing.
i. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1363-Rev. A, 18-Jul-11
Document Number: 67034
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ460EP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
32
24
16
8
40
32
24
16
8
VGS = 10 V thru 4 V
TC = 25 °C
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
100
80
60
40
20
0
TC = - 55 °C
TC = 25 °C
TC = 25 °C
TC = 125 °C
TC = 125 °C
TC = - 55 °C
0
3
6
9
12
15
0
1
2
3
4
5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
0.025
0.020
0.015
0.010
0.005
0.000
6000
4800
3600
2400
1200
0
Ciss
VGS = 4.5 V
VGS = 10 V
Crss
Coss
0
8
16
24
32
40
0
12
24
36
48
60
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
S11-1363-Rev. A, 18-Jul-11
Document Number: 67034
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ460EP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
0.5
10
8
ID = 18 A
ID = 18 A
VDS = 30 V
VGS = 10 V
VGS = 4.5 V
6
4
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
20
40
60
80
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.05
0.04
0.03
0.02
0.01
0.00
100
10
TJ = 150 °C
1
0.1
TJ = 150 °C
TJ = 25 °C
TJ = 25 °C
0.01
0.001
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.3
80
76
72
68
64
60
ID = 1 mA
0.0
- 0.3
- 0.6
- 0.9
- 1.2
ID = 5 mA
ID = 250 μA
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S11-1363-Rev. A, 18-Jul-11
Document Number: 67034
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ460EP
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100
10
ID Limited
100 μs
1 ms
10 ms
100 ms
1 s,10 s, DC
Limited by RDS(on)
*
1
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. TJM - T = P
Z
A
DM thJA
Single Pulse
-2 -1
4. Surface Mounted
0.01
-4
-3
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-1363-Rev. A, 18-Jul-11
Document Number: 67034
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ460EP
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67034.
S11-1363-Rev. A, 18-Jul-11
Document Number: 67034
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline
Revision: 27-Aug-12
Document Number: 69003
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
MILLIMETERS
INCHES
DIM.
MIN.
1.00
0.00
0.33
0.44
4.80
NOM.
1.07
-
MAX.
1.14
0.127
0.48
0.58
5.00
MIN.
0.039
0.00
NOM.
0.042
-
MAX.
0.045
0.005
0.019
0.023
0.197
A
A1
b
0.41
0.51
4.90
0.094
0.47
0.25
5.13
4.90
3.96
1.73
1.27 BSC
6.15
4.37
2.85
3.28
-
0.013
0.017
0.189
0.016
0.020
0.193
0.004
0.019
0.010
0.202
0.193
0.156
0.068
0.050 BSC
0.242
0.172
0.112
0.129
-
b1
b2
b3
b4
c
0.20
5.00
4.80
3.86
1.63
0.30
5.25
5.00
4.06
1.83
0.008
0.197
0.189
0.152
0.064
0.012
0.207
0.197
0.160
0.072
D
D1
D2
D3
e
E
6.05
4.27
6.25
4.47
2.95
3.38
0.15
0.82
1.22
0.238
0.168
0.108
0.125
-
0.246
0.176
0.116
0.133
0.006
0.032
0.048
E1
E2 (for Al product)
2.75
3.18
-
E2 (for other product)
F
L
0.62
0.92
0.72
1.07
0.51
0.23
0.41
2.82
2.96
-
0.024
0.036
0.028
0.042
0.020
0.009
0.016
0.111
0.117
-
L1
K
W
W1
W2
W3
0°
10°
0°
10°
ECN: C12-0026-Rev. B, 27-Aug-12
DWG: 5976
Note
Millimeters will gover
•
Revision: 27-Aug-12
Document Number: 69003
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
www.vishay.com
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
4.061
(0.160)
3.630
(0.143)
0.595
(0.023)
0.610
(0.024)
0.710
(0.028)
2.715
(0.107)
0.860
(0.034)
0.410
(0.016)
0.820
(0.032)
1.905
1.270
(0.075)
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
Document Number: 63818
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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