SUB50N04-07T [VISHAY]
Transistor;
VISHAY 
SUB50N04-07T
Vishay Siliconix
New Product
N-Channel 40-V (D-S) MOSFET with Sensing Diode
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
40
0.0075 @ V = 10 V
GS
50
D
2
D PAK-5L
T
T
1
2
D
1
D
2
G
1 2 3 4 5
S
N-Channel MOSFET
G
D
S
T
2
T
1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
40
DS
V
GS
"20
V
a
T
= 25_C
= 100_C
50
C
d
Continuous Drain Current (T = 175_C)
I
J
D
a
T
50
C
A
Pulsed Drain Current
I
200
DM
d
a
Continous Diode Current (Diode Conduction)
I
S
50
a
Avalanche Current
I
50
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
125
mJ
c
T
= 25_C
= 25_C
200
C
a
Maximum Power Dissipation
P
W
D
d
T
3.75
A
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
d
Junction-to-Ambient
PCB Mount
R
40
thJA
thJC
C/W
Junction-to-Case
R
0.75
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71419
S-03270—Rev. A, 12-Feb-01
www.vishay.com
1
SUB50N04-07T
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 250 mA
40
2
(BR)DSS
GS
D
V
V
DS
= V , I = 250 mA
V
GS DS
GS(th)
V
DS
= 0 V, V = "20 V
I
"100
1
nA
GS
GSS
V
= 32 V, V = 0 V
GS
DS
V
V
= 32 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 32 V, V = 0 V, T = 175_C
500
DS
GS
J
a
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
120
A
D(on)
GS
V
= 10 V, I = 25 A
0.0063
0.0075
0.011
0.014
715
GS
D
a
V
V
= 10 V, I = 25 A, T = 125_C
= 10 V, I = 25 A, T = 175_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
GS
D
J
I
F
= 50 mA
V
FD1
655
600
30
Sense Diode Forward Voltage
I
F
= 25 mA
V
660
mV
S
FD2
From I = 25 mA to I = 50 mA
Sense Diode Forward Voltage Increase
DV
80
F
F
F
a
Forward Transconductance
g
V
DS
= 15 V, I = 20 A
35
fs
D
Dynamicb
Input Capacitance
C
6400
1100
630
115
35
iss
Output Capacitance
C
oss
V
= 0 V, V = 25 V, f = 1 MHz
DS
pF
nC
GS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
150
g
c
Gate-Source Charge
Q
Q
V
DS
= 20 V, V = 10 V, I = 25 A
gs
gd
GS
D
c
Gate-Drain Charge
35
c
Turn-On Delay Time
t
15
20
210
85
d(on)
c
Rise Time
t
r
150
60
V
= 20 V, R = 0.8 W
L
DD
ns
c
Turn-Off Delay Time
t
d(off)
I
D
] 25 A, V
= 10 V, R = 2.5 W
GEN G
c
Fall Time
t
f
80
110
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
50
200
1.5
70
s
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= 50 A, V = 0 V
1.0
45
V
ns
A
GS
Reverse Recovery Time
t
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
2.5
0.06
5
I
F
= 50 A, di/dt = 100 A/ms
Q
0.18
mC
rr
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 71419
www.vishay.com
S-03270—Rev. A, 12-Feb-01
2
SUB50N04-07T
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
200
200
150
100
50
V
GS
= 10 thru 7 V
150
100
50
6 V
T
= 125_C
C
25_C
5 V
3, 4 V
6
–55_C
0
0
0
2
4
8
10
0
2
4
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
200
160
120
80
0.012
0.009
0.006
0.003
0.000
T
= –55_C
C
25_C
V
GS
= 10 V
125_C
40
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
Gate Charge
10000
8000
6000
4000
2000
0
20
16
12
8
V
= 20 V
= 25 A
GS
I
D
C
iss
C
oss
4
C
rss
0
0
4
8
12
16
20
0
50
100
150
200
V
DS
– Drain-to-Source Voltage (V)
Q
– Total Gate Charge (nC)
g
Document Number: 71419
www.vishay.com
S-03270—Rev. A, 12-Feb-01
3
SUB50N04-07T
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
V
= 10 V
= 25 A
GS
I
D
1.6
1.2
0.8
0.4
0.0
T
= 150_C
J
10
T
= 25_C
J
1
–50 –25
0
25
50
75 100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
J
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
55
52
49
46
43
40
I
D
= 250 mA
100
10
1
I
AV
(A) @ T = 150_C
A
I
AV
(A) @ T = 25_C
A
0.1
–50 –25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
0.1
1
t
in
(Sec)
T
– Junction Temperature (_C)
J
Sense Diode Forward Voltage vs. Temperature
Sense Diode Forward Voltage
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.001
0.0001
I
D
= 50 mA
T
= 150_C
J
I
D
= 25 mA
T
= 25_C
J
0.00001
0.000001
0
25
50
75
100
125
150
0
0.25
0.5
0.75
(V)
1.0
1.25
1.5
T
– Junction Temperature (_C)
V
F
J
Document Number: 71419
www.vishay.com
S-03270—Rev. A, 12-Feb-01
4
SUB50N04-07T
Vishay Siliconix
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
60
50
40
30
20
10
0
10 ms
Limited
100 ms
by r
DS(on)
100
10
1 ms
10 ms
100 ms
dc
T
= 25_C
C
1
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
– Case Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Document Number: 71419
www.vishay.com
S-03270—Rev. A, 12-Feb-01
5
相关型号：
SUB60N06-14
Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
VISHAY
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