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SUB75N03-04-E3 [VISHAY]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
SUB75N03-04-E3
型号： SUB75N03-04-E3
厂家： VISHAY    VISHAY
描述：

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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SUP/SUB75N03-04  
Vishay Siliconix  
N-Channel 30-V (D-S), 175_C MOSFET  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
a
30  
0.004  
75  
D
TO-220AB  
TO-263  
G
DRAIN connected to TAB  
DRAIN connected to TAB  
G
D S  
Top View  
SUB75N03-04  
G D  
S
S
Top View  
SUP75N03-04  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Gate-Source Voltage  
V
GS  
"20  
V
a
T
= 25_C  
75  
C
Continuous Drain Current  
I
D
a
(T = 175_C)  
J
T
= 125_C  
75  
C
Pulsed Drain Current  
I
250  
75  
A
DM  
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
S
I
75  
AR  
Avalanche Energy  
L = 0.1 mH  
E
280  
140  
AS  
AR  
mJ  
W
b
Repetitive Avalanche Energy  
L = 0.05 mH  
E
c
T
= 25_C (TO-220AB and TO-263)  
187  
C
Maximum Power Dissipation  
P
D
d
T
A
= 25_C (TO-263)  
3.7  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 175  
stg  
_C  
Lead Temperature  
1
TO-220AB  
T
300  
L
( / ” from case for 10 sec.)  
16  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
d
PCB Mount (TO-263)  
40  
62.5  
0.6  
Junction-to-Ambient  
Junction-to-Case  
R
thJA  
R
thJC  
Free Air (TO-220AB)  
_C/W  
Notes  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 70745  
S-04137—Rev. E, 18-Jun-01  
www.vishay.com  
2-1  
SUP/SUB75N03-04  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typa  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= 0 V, I = 250 mA  
30  
1
(BR)DSS  
GS  
D
V
V
V
V
= V , I = 250 mA  
3
"500  
1
GS(th)  
DS  
GS  
D
= 0 V, V = "20 V  
I
nA  
DS  
GS  
GSS  
V
= 30 V, V = 0 V  
GS  
DS  
V
V
= 30 V, V = 0 V, T = 125_C  
50  
Zero Gate Voltage Drain Current  
I
mA  
DS  
GS  
J
DSS  
= 30 V, V = 0 V, T = 175_C  
200  
DS  
GS  
J
b
On-State Drain Current  
I
V
DS  
= 5 V, V = 10 V  
120  
A
D(on)  
GS  
V
= 10 V, I = 75 A  
0.0034  
0.005  
0.004  
0.006  
0.006  
0.008  
GS  
D
V
GS  
= 4.5 V, I = 75 A  
D
b
Drain-Source On-State Resistance  
r
W
DS(on)  
V
V
= 10 V, I = 25 A, T = 125_C  
GS  
D
J
= 10 V, I = 25 A, T = 175_C  
GS  
D
J
b
Forward Transconductance  
g
fs  
V
= 15 V, I = 25 A  
30  
S
DS  
D
Dynamic  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
C
10742  
1811  
775  
200  
40  
iss  
C
oss  
V
= 0 V, V = 25 V, f = 1 MHz  
pF  
nC  
GS  
DS  
C
rss  
Q
250  
40  
g
Q
Q
V
DS  
= 30 V, V = 10 V, I = 75 A  
GS D  
gs  
gd  
40  
t
20  
d(on)  
t
40  
r
V
DD  
= 30 V, R = 0.6 W  
L
= 10 V, R = 2.5 W  
GEN G  
ns  
I
^ 50 A, V  
D
Turn-Off Delay Time  
Fall Time  
t
190  
95  
d(off)  
t
f
Source-Drain Diode Ratings and Characteristics  
b
Diode Forward Voltage  
V
I
= 75 A, V = 0 V  
1.3  
120  
6
V
ns  
A
SD  
F
GS  
Reverse Recovery Time  
Peak Reverse Recovery Current  
Reverse Recovery Charge  
t
70  
2.8  
0.1  
rr  
RM(rec)  
I
I
F
= 50 A, di/dt = 100 A/ms  
Q
0.36  
mC  
rr  
Notes:  
a. For design aid only; not subject to production testing.  
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
Document Number: 70745  
www.vishay.com  
S-04137—Rev. E, 18-Jun-01  
2-2  
SUP/SUB75N03-04  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
250  
200  
150  
100  
50  
V
GS  
= 10, 9, 8, 7, 6, 5 V  
200  
150  
100  
50  
4 V  
T
= 125_C  
C
3 V  
8
25_C  
–55_C  
0
0
0
2
4
6
10  
0
1
2
3
4
5
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
175  
150  
125  
100  
75  
0.008  
0.006  
0.004  
0.002  
0.000  
25_C  
T
= –55_C  
C
125_C  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
50  
25  
0
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
120  
V
GS  
– Gate-to-Source Voltage (V)  
I
D
– Drain Current (A)  
Capacitance  
Gate Charge  
14000  
12000  
10000  
8000  
6000  
4000  
2000  
0
20  
16  
12  
8
C
iss  
V
= 30 V  
= 75 A  
DS  
I
D
C
oss  
4
C
rss  
0
0
6
12  
18  
24  
30  
0
100  
200  
300  
400  
V
DS  
– Drain-to-Source Voltage (V)  
Q
– Total Gate Charge (nC)  
g
Document Number: 70745  
www.vishay.com  
S-04137—Rev. E, 18-Jun-01  
2-3  
SUP/SUB75N03-04  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistancevs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.5  
100  
V
= 10 V  
= 30 A  
GS  
I
D
2.0  
1.5  
1.0  
0.5  
0.0  
T = 150_C  
J
T = 25_C  
J
10  
1
–50 –25  
0
25  
50  
75 100 125 150 175  
0.3  
V
0.6  
0.9  
1.2  
1.5  
T
– Junction Temperature (_C)  
– Source-to-Drain Voltage (V)  
J
SD  
THERMAL RATINGS  
Maximum Avalanche and Drain Current  
vs. Case Temperature  
Safe Operating Area  
100  
80  
60  
40  
20  
0
100 ms  
Limited  
by r  
DS(on)  
100  
10  
1
1 ms  
10 ms  
100 ms  
dc  
T
= 25_C  
C
Single Pulse  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1.0  
10.0  
T
– Case Temperature (_C)  
V
DS  
– Drain-to-Source Voltage (V)  
C
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
–5  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
10  
1
3
Square Wave Pulse Duration (sec)  
Document Number: 70745  
www.vishay.com  
S-04137—Rev. E, 18-Jun-01  
2-4  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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