SUB75P03-08 [VISHAY]
P-Channel 30-V (D-S), 175C MOSFET; P通道30 - V（D -S）， 175℃下的MOSFET
| 型号： | SUB75P03-08 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S), 175C MOSFET |
| 文件： | 总4页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUP/SUB75P03-08
Vishay Siliconix
P-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
–30
0.008
–75
S
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
D
SUB75P03-08
Top View
P-Channel MOSFET
SUP75P03-08
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V
GS
"20
V
a
T
= 25_C
= 125_C
–75
C
Continuous Drain Current
(T = 175_C)
J
I
D
T
–65
–200
–75
C
A
Pulsed Drain Current
I
DM
Avalanche Current
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
280
mJ
d
T
= 25_C (TO-220AB and TO-263)
250
C
Power Dissipation
P
D
W
c
T
= 25_C (TO-263)
3.7
A
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
c
PCB Mount (TO-263)
R
thJA
R
thJA
R
thJC
40
62.5
0.6
Junction-to-Ambient
Junction-to-Case
Free Air (TO-220AB)
_C/W
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
Document Number: 70772
S-05111—Rev. D, 10-Dec-99
www.vishay.com
1
SUP/SUB75P03-08
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = –250 mA
–30
–1
(BR)DSS
GS
D
V
V
DS
= V , I = –250 mA
GS D
V
–3
GS(th)
V
DS
= 0 V, V = "20 V
GS
I
"100
–1
nA
GSS
V
= –30 V, V = 0 V
GS
DS
V
V
= –30 V, V = 0 V, T = 125_C
–50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= –30 V, V = 0 V, T = 175_C
–150
DS
GS
J
a
On-State Drain Current
I
V
DS
= –5 V, V = –10 V
–120
A
D(on)
GS
V
= –10 V, I = –30 A
0.008
0.012
0.015
GS
D
a
V
GS
= –10 V, I = –30 A, T = 125_C
Drain-Source On-State Resistance
r
W
D
J
DS(on)
V
GS
= –10 V, I = –30 A, T = 175_C
D
J
a
Forward Transconductance
g
fs
V
= –15 V, I = –30 A
30
S
DS
D
Dynamicb
Input Capacitance
C
6900
1850
570
115
30
iss
Output Capacitance
C
oss
V
= 0 V, V = –25 V, f = 1 MHz
pF
nC
GS
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
140
g
c
Gate-Source Charge
Q
Q
V
= –15 V, V = –10 V, I = –75 A
GS D
gs
gd
DS
c
Gate-Drain Charge
10
c
Turn-On Delay Time
t
10
20
30
d(on)
c
Rise Time
t
r
16
V
DD
= –15 V, R = 0.2 W
L
ns
c
Turn-Off Delay Time
t
140
80
200
140
I
D
] –75 A, V = –10 V, R = 2.5 W
GEN G
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
–75
–200
–1.4
100
5
s
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= –75 A, V = 0 V
–1.1
60
V
ns
A
GS
Reverse Recovery Time
t
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
2.5
I
F
= –75 A, di/dt = 100 A/ms
Q
0.008
0.016
mC
rr
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Document Number: 70772
www.vishay.com
S-05111—Rev. D, 10-Dec-99
2
SUP/SUB75P03-08
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
200
150
120
90
60
30
0
V
GS
= 10, 9, 8, 7, 6 V
4 V
T
= –55_C
C
25_C
160
120
80
40
0
125_C
5 V
3 V
0
2
4
6
8
10
0.0
1.5
GS
3.0
4.5
6.0
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
DS
Transconductance
On-Resistance vs. Drain Current
100
80
60
40
20
0
0.008
0.006
0.004
0.002
0.000
T
= –55_C
C
V
= 10 V
= 20 V
25_C
GS
GS
125_C
V
0
15
30
45
60
0
20
40
60
80
100
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
Gate Charge
20
16
12
8
8500
6500
4500
2500
500
C
iss
V
= 15 V
= 75 A
DS
I
D
C
oss
C
rss
4
0
0
6
12
18
24
30
0
30
60
Q – Total Gate Charge (nC)
g
90
120
150
180
210
V
– Drain-to-Source Voltage (V)
DS
Document Number: 70772
www.vishay.com
S-05111—Rev. D, 10-Dec-99
3
SUP/SUB75P03-08
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
100
V
= 10 V
= 30 A
GS
I
D
1.5
1.2
0.9
0.6
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0.0
0.3
0.6
0.9
1.2
1.5
T
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
J
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
100
80
60
40
20
0
Limited
by r
DS(on)
100
10
1
100 ms
1 ms
10 ms
100 ms
dc, 1 s
T
= 25_C
C
Single Pulse
0
25
50
75
100
125
150
175
0.1
1.0
10.0
T
– Case Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Document Number: 70772
www.vishay.com
S-05111—Rev. D, 10-Dec-99
4
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