SUD25N15-52-E3 [VISHAY]
N-Channel 150-V (D-S) 175C MOSFET; N沟道150 -V （D -S ） 175C MOSFET
| 型号： | SUD25N15-52-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 150-V (D-S) 175C MOSFET |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD25N15-52
Vishay Siliconix
N-Channel 150-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized
VDS (V)
rDS(on) (W)
ID (A)
0.052 @ V = 10 V
25
23
D 100% Rg Tested
APPLICATIONS
GS
150
0.060 @ V = 6 V
GS
D Primary Side Switch
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
S
Ordering Information:
N-Channel MOSFET
SUD25N15-52
SUD25N15-52—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
150
"20
25
DS
GS
V
V
T
= 25_C
= 125_C
C
b
Continuous Drain Current (T = 175_C)
I
D
J
T
14.5
50
C
Pulsed Drain Current
I
A
DM
Continuous Source Current (Diode Conduction)
Avalanche Current
I
25
S
I
25
AR
Repetitive Avalanche Energy (Duty Cycle v 1%)
L = 0.1 mH
E
AR
31
mJ
b
T
= 25_C
= 25_C
136
C
Maximum Power Dissipation
P
D
W
a
T
3
A
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
15
40
18
50
a
Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Junction-to-Case (Drain)
0.85
1.1
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71768
S-40272—Rev. C, 23-Feb-04
www.vishay.com
1
SUD25N15-52
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
150
2
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
4
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
DS
= 150 V, V = 0 V
GS
V
V
= 150 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 150 V, V = 0 V, T = 175_C
250
DS
GS
J
b
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
50
A
D(on)
GS
V
= 10 V, I = 5 A
0.042
0.052
0.109
0.145
0.060
GS
D
V
= 10 V, I = 5 A, T = 125_C
GS
D
J
b
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= 10 V, I = 5 A, T = 175_C
D
J
V
= 6 V, I = 5 A
0.047
40
GS
D
b
Forward Transconductance
g
fs
V
DS
= 15 V, I = 25 A
S
D
Dynamica
Input Capacitance
C
C
1725
216
100
33
iss
V
V
= 0 V, V = 25 V, F = 1 MHz
DS
Output Capacitance
pF
GS
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
40
g
c
Gate-Source Charge
Q
Q
9
= 75 V, V = 10 V, I = 25 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
12
Gate Resistance
R
g
1
3
W
c
Turn-On Delay Time
t
15
70
25
60
25
100
40
40
d(on)
c
Rise Time
t
r
V
= 50 V, R = 3 W
L
GEN g
DD
ns
c
I
D
^ 25 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
50
1.5
140
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 25 A, V = 0 V
0.9
95
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 25 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Document Number: 71768
S-40272—Rev. C, 23-Feb-04
www.vishay.com
2
SUD25N15-52
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
6 V
V
GS
= 10 thru 7 V
40
30
20
10
0
T
= 125_C
C
25_C
5 V
4 V
−55_C
0
2
4
6
8
10
0
1
2
3
4
5
6
7
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
60
50
40
30
20
10
0
0.10
0.08
0.06
0.04
0.02
0.00
T
= −55_C
C
25_C
125_C
V
GS
= 6 V
V
GS
= 10 V
0
10
20
30
40
50
0
10
20
30
40
50
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
2500
2000
1500
1000
500
20
16
12
8
V
D
= 75 V
DS
I
= 25 A
C
iss
4
C
rss
C
oss
0
0
0
30
60
90
120
150
0
10
20
Q − Total Gate Charge (nC)
g
30
40
50
60
V
DS
− Drain-to-Source Voltage (V)
Document Number: 71768
S-40272—Rev. C, 23-Feb-04
www.vishay.com
3
SUD25N15-52
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
3.0
100
10
1
V
D
= 10 V
GS
I
= 5 A
2.5
2.0
1.5
1.0
0.5
0.0
T = 150_C
J
T = 25_C
J
−50 −25
0
25
50
75 100 125 150 175
0
0.3
V − Source-to-Drain Voltage (V)
SD
0.6
0.9
1.2
T
− Junction Temperature (_C)
J
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
30
25
20
15
10
5
100
10 ms
Limited by r
DS(on)
100 ms
10
1
1 ms
10 ms
100 ms
1 s, dc
T
= 25_C
C
Single Pulse
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
V
DS
− Drain-to-Source Voltage (V)
T
− Case Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
30
Document Number: 71768
S-40272—Rev. C, 23-Feb-04
www.vishay.com
4
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VISHAY
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