SUD50N03-12P [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V (D -S )的MOSFET型号: | SUD50N03-12P |
厂家: | VISHAY |
描述: | N-Channel 30-V (D-S) MOSFET |
文件: | 总4页 (文件大小:68K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SUD50N03-12P
Vishay Siliconix
New Product
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)a
0.012 @ V = 10 V
17.5
14.5
GS
30
0.0175 @ V = 4.5 V
GS
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD50N03-12P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
"20
17.5
12.4
40
DS
GS
V
V
T
= 25_C
= 100_C
A
a
Continuous Drain Current
I
D
T
A
Pulsed Drain Current
I
A
DM
a
Continuous Source Current (Diode Conduction)
Avalanche Current
I
5
S
I
AS
30
L = 0.1 mH
Single Pulse Avalanche Energy
E
AS
45
mJ
T
= 25_C
= 25_C
46.8
C
Maximum Power Dissipation
P
D
W
a
T
6.5
A
Operating Junction and Storage Temperature Range
T , T
-55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
18
40
23
50
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Maximum Junction-to-Case
2.6
3.2
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72267
S-31875—Rev. A, 15-Sep-03
www.vishay.com
1
SUD50N03-12P
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
30
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
1.0
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 24 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 24 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
40
15
A
D(on)
DS
GS
V
= 10 V, I = 20 A
0.010
0.012
0.017
GS
D
b
V
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 15 A
0.0138
0.0175
GS
D
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
1600
285
140
28
iss
V
GS
= 0 V, V = 25 V, f = 1 MHz
DS
Output Capacitance
pF
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
42
g
c
Gate-Source Charge
Q
Q
6.0
5.0
1.5
9
V
= 15 V, V = 10 V, I = 50 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
Gate Resistance
R
W
g
c
Turn-On Delay Time
t
15
25
30
20
d(on)
c
Rise Time
t
15
r
V
DD
= 15 V, R = 0.3 W
L
ns
c
I
^ 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
20
D
GEN G
d(off)
c
Fall Time
t
12
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
100
1.5
70
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 40 A, V = 0 V
1.2
25
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
80
80
60
40
20
0
V
GS
= 10 thru 5 V
60
40
20
0
4 V
3 V
T
= 125_C
C
25_C
-55_C
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72267
S-31875—Rev. , 15-Sep-03
www.vishay.com
2
SUD50N03-12P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
80
0.05
0.04
0.03
0.02
0.01
0.00
T
= -55_C
C
60
40
20
0
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
10
20
30
40
50
0
20
40
60
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Capacitance
Gate Charge
2500
2000
1500
1000
500
10
8
V
D
= 15 V
DS
I
= 50 A
C
iss
6
4
2
C
oss
C
rss
0
0
0
5
10
15
20
25
30
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
V
GS
= 10 V
I
D
= 15 A
T = 150_C
T = 25_C
J
J
-50 -25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
J
Document Number: 72267
S-31875—Rev. , 15-Sep-03
www.vishay.com
3
SUD50N03-12P
Vishay Siliconix
New Product
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
1000
20
16
12
8
Limited
by r
100
10
DS(on)
10, 100 ms
1 ms
10 ms
100 ms
1 s
1
10 s
T
= 25_C
A
4
0.1
Single Pulse
dc, 100 s
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
T
A
- Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
100
Document Number: 72267
S-31875—Rev. , 15-Sep-03
www.vishay.com
4
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