SUD50P08-25L-E3 [VISHAY]
P-Channel 80-V (D-S) 175 °C MOSFET; P通道80 -V （ D- S） 175℃ MOSFET
| 型号： | SUD50P08-25L-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 80-V (D-S) 175 °C MOSFET |
| 文件： | 总7页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SUD50P08-25L
Vishay Siliconix
P-Channel 80-V (D-S) 175 °C MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
VDS (V)
rDS(on) (Ω)
Qg (Typ)
I
D (A)a
- 50
RoHS
0.0252 at VGS = - 10 V
0.029 at VGS = - 4.5 V
COMPLIANT
- 80
55 nC
- 47
TO-252
S
G
Drain Connected to Tab
G
D
S
Top View
Ordering Information: SUD50P08-25L-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 80
20
V
VGS
- 50a
- 42.5a
- 12.5b, c
- 10.5b, c
TC = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 175 °C)
ID
TA = 25 °C
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
- 40
- 50a
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
- 6.9b, c
- 45
101
IAS
Avalanche Current
L = 0.1 mH
TC = 25 °C
EAS
Single-Pulse Avalanche Energy
mJ
W
136
T
C = 70 °C
A = 25 °C
95
PD
Maximum Power Dissipation
8.3b, c
T
5.8b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
RthJA
t ≤ 10 sec
15
18
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
0.85
1.1
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 40 °C/W.
Document Number: 73443
S-71660-Rev. B, 06-Aug-07
www.vishay.com
1
New Product
SUD50P08-25L
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 80
V
V
DS Temperature Coefficient
- 73
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 5.5
VDS = VGS, ID = - 250 µA
- 1
- 3
100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 80 V, VGS = 0 V
DS = - 80 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = - 10 V
IDSS
ID(on)
rDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
VGS = - 10 V, ID = - 12.5 A
0.021
0.024
52
0.0252
0.029
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
VGS = - 4.5 V, ID = - 10.5 A
VDS = - 15 V, ID = - 12.5 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4700
320
235
105
55
VDS = - 40 V, VGS = 0 V, f = 1 MHz
pF
VDS = - 40 V, VGS = - 10 V, ID = - 12.5 A
160
85
Qg
Total Gate Charge
nC
Ω
Qgs
Qgd
Rg
Gate-Source Charge
V
DS = - 40 V, VGS = - 4.5 V, ID = - 12.5 A
16
Gate-Drain Charge
26
Gate Resistance
f = 1 MHz
4
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
45
70
330
145
165
25
Rise Time
220
95
V
DD = - 40 V, RL = 3.8 Ω
ns
ID ≅ - 10.5 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
110
15
Turn-On Delay Time
Rise Time
25
40
V
DD = - 40 V, RL = 3.8 Ω
ns
A
ID ≅ - 10.5 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
105
100
160
150
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
- 50
- 40
- 1.2
85
IS = - 10.5 A
- 0.8
55
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
110
37
165
IF = - 10.5 A, di/dt = 100 A/µs, TJ = 25 °C
ns
tb
18
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73443
S-71660-Rev. B, 06-Aug-07
New Product
SUD50P08-25L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
20
16
12
8
40
35
30
25
20
15
10
5
V
GS
= 10 thru 4 V
T
A
= 125 °C
25 °C
4
3 V
- 55 °C
3.0 3.5
0
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.026
8000
7000
6000
5000
4000
3000
2000
1000
0
0.025
0.024
0.023
0.022
0.021
0.020
V
GS
= 6 V
C
iss
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
10
8
I
D
= 12.5 A
I
D
= 12.5 A
V
GS
= 10 V
V
DS
= 64 V
6
V
DS
= 40 V
V
GS
= 6 V
4
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
20
40
60
80
100
120
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73443
S-71660-Rev. B, 06-Aug-07
www.vishay.com
3
New Product
SUD50P08-25L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
0.05
0.04
0.03
0.02
0.01
40
T
= 125 °C
T
= 150 °C
A
J
10
T
= 25 °C
A
T
= 25 °C
J
1
0.00
2
3
4
5
6
7
- Gate-to-Source Voltage (V)
GS
8
9
10
0.2
0.4
0.6
0.8
1.0
1.2
V
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
35
30
I
= 250 µA
D
25
20
15
10
5
0
- 50 - 25
0
25
50
75 100 125 150 175
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Time (sec)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
100 µs
*Limited by
DS(on)
r
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
0.01
dc
T
= 25 °C
A
Single Pulse
0.001
0.1
1
10
100
1000
V
DS
- Drain-to-Source Voltage (V)
*V > minimum V
GS
at which r is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73443
S-71660-Rev. B, 06-Aug-07
New Product
SUD50P08-25L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
140
120
100
80
60
50
40
30
20
10
0
Package Limited
60
40
20
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power Derating
Current Derating*
100
10
L · I
D
T
A
=
BV - V
DD
1
0.000001
0.00001
0.0001
0.001
0.01
T
A
- Time In Avalanche (sec)
Single Pulse Avalanche Capability
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73443
S-71660-Rev. B, 06-Aug-07
www.vishay.com
5
New Product
SUD50P08-25L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-2
-1
10
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73443.
Document Number: 73443
S-71660-Rev. B, 06-Aug-07
www.vishay.com
6
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SUD50P10-43-E3
TRANSISTOR 9.4 A, 100 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
VISHAY
SUD70N02-03P-T4
Power Field-Effect Transistor, 39A I(D), 20V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明